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arXiv 1001.0963cond-mat.supr-concond-mat.str-el
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具有超导/磁性界面的氧化物混合异质结构中的邻近效应和电子输运

Proximity effect and electron transport in the oxide hybrid heterostructures with superconducting/magnetic interfaces

G. A. Ovsyannikov, K. Y. Constantinian, Yu. V. Kislinski, A. V. Shadrin, A. V. Zaitsev, V. V. Demidov, I. V. Borisenko, A. V. Kalabukhov, D. Winkler

摘要:

研究了具有超导体/磁性物质(S/M)界面的氧化物异质结构中的电子输运,在S/M界面处,超导关联在磁性物质中的反常大穿透(邻近效应)得以实现.基于M-中间层多层磁性结构的理论模型和实验结果表明,在S/M-界面处存在长程邻近效应,层间磁化呈现反铁磁(AF)有序。所研究的混合异质结构包括铜酸盐超导体、AF-铜酸盐夹层和传统超导体Nb。在液氦温度下,用AF膜CaSrCuO制成的15-50 nm厚的M-夹层,观察到密度为1-10A/cm ~ 2的超导临界电流和0.1- 0.2mV的特征电压。这些异质结构偏离了正弦型超导电流-相位关系,其二次谐波临界电流为一次谐波的10-20%。具有S/AF界面的混合异质结构显示出对外磁场的高灵敏度,这可能是由于外磁场对AF -中间层的各个层的磁矩的倾斜的影响。用亚锰酸盐膜代替AF铜酸盐,没有观察到临界电流,尽管M-中间层非常薄,低至5 nm。

英文摘要:

We report on the study of electron transport in the oxide heterostructures with superconductor/magnetic matter (S/M) interfaces where anomaly large penetration of superconducting correlations in magnetic matter (proximity effect) is realized. The developed theoretical model based on multilayer magnetic structure of M-interlayer and experiment show presence of the long-range proximity effect at S/M-interface with antiferromagnetic (AF) ordering of the interlayer magnetization. The investigated hybrid heterostructures include cuprate superconductor, the AF-cuprate interlayer and conventional superconductor, Nb. The superconducting critical current with density 1-10A/cm2 and the characteristic voltage, 0.1-0.2 mV, are observed at liquid helium temperature for 15-50 nm thick M-interlayer made of AF film CaSrCuO. These heterostructures demonstrate deviation from sin-type superconducting current-phase relation and had the critical current of the second harmonic of 10-20% of the first harmonic one. The hybrid heterostructures with S/AF interface show high sensitivity to the external magnetic field that is possibly caused by the influence of an external magnetic field on the canting of magnetic moments of individual layers of AF -interlayer. Substituting the AF cuprate by a manganite film, no critical current was observed, although the M- interlayer was made very thin, down to 5 nm.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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