Role of energetic ions in the growth of fcc and ω crystalline phases in Ti films deposited by HiPIMS
David Dellasega, Francesco Mirani, Davide Vavassori, Claudia Conti, Matteo Passoni
备注：
This project has received funding from the European Research Council (ERC) under the European Union's Horizon 2020 research and innovation programme (ENSURE grant agreement No. 647554)
Titanium (Ti), due to its excellent properties, is widely exploited in thin film technology that usually leads to the production of α-phase (hcp) Ti films. In this work, we investigate the phase evolution of Ti films deposited by varying type and energy of the film-forming species. To investigate different plasma species environments, films with different thicknesses are grown by using conventional Direct Current Magnetron Sputtering (DCMS) and High Power Impulse Magnetron Sputtering (HiPIMS). Furthermore, HiPIMS depositions with different substrate bias voltage US (0 V, -300 V and -500 V) are performed to investigate different ion energy ranges. Microstructure, morphology and residual stress of the deposited films, as well as the DCMS and HiPIMS plasma composition, are analysed with different characterization techniques. The DCMS samples exhibit the Ti α-phase only and show a tensile residual stress decreasing with thickness. As far as HiPIMS samples are concerned, a compressive-tensile-compressive (CTC) behavior is observed for residual stresses as thickness increases. Specifically, films deposited in low energy ion conditions (US =0 V) show the presence of the Ti fcc phase up to a maximum thickness of about 370 nm. Differently, films deposited under high energy conditions (US = -300 V and -500 V) show the nucleation of the Ti ω-phase for thicknesses greater than 260 and 330 nm, respectively. The formation of these unusual Ti phases is discussed considering the different deposition conditions.
Effect of atomic ordering on the magnetic anisotropy of single crystal Ni80Fe20
研究了原子有序化对Ni_（80）Fe_（20）at.%（Py）.为此，使用直流磁控溅射（dcMS）和高功率脉冲磁控溅射（HiPIMS）在MgO（001）上外延生长Py膜。除了在后一种情况下观察到的孪晶界，这两种方法都提供了高质量的单晶体与立方体上的立方体外延关系，通过重要晶面的极映射验证。然而，X射线衍射结果表明，更高阶的dcMS沉积膜向L12 Ni3Fe超晶格。这种差异可以通过HiPIMS在每个脉冲期间的非常高的沉积速率来理解，这抑制了吸附原子的迁移率和有序化。我们发现，dcMS沉积膜呈现双轴各向异性，而HiPIMS沉积给出了明确的单轴各向异性。因此，在dcMS沉积中实现的更高阶的行为如通过磁晶各向异性所预测的，即，由于形状各向异性，沿[110]方向的易磁化轴在平面中被迫沿[111]方向。在HiPIMS沉积膜的单轴行为，然后可以解释成对排序或最近的本地化组成不均匀性理论。此外，我们使用扩展的van der Pauw方法研究了薄膜沿[100]方向的磁电阻。我们发现，dcMS沉积膜的电导率低于他们的HiPIMS同行验证在dcMS的情况下，更高的顺序。
The role of ionization fraction on the surface roughness, density and interface mixing of the films deposited by thermal evaporation, dc magnetron sputtering and HiPIMS: An atomistic simulation
Comparison of mechanical properties of Ag/W1-xTixB2.5 and pure silver coatings deposited by PLD/HIPIMS method
Institute of Fundamental Technological Research POLISH ACADEMY OF SCIENCES（波兰科学院基础技术研究所）；Warsaw University of Technology, Faculty of Materials Science and Engineering（华沙理工大学材料科学与工程学院）
Accurate Reporting of Ion Time-of-Flight during HiPIMS with Gated Front-End Mass Spectrometry
Laboratory for Surface Science and Coating Technologies, Empa − Swiss Federal Laboratories for Materials Science and Technology（表面科学与涂层技术实验室，瑞士联邦材料科技研究院）
The growth of bismuth on Bi$_2$Se$_3$ and the stability of the first bilayer
在Se封端的Bi $_2$ Se $_3$（0001）表面上生长了多层Bi（0001）薄膜，利用低能电子衍射（LEED）、低能离子散射（LEIS）和原子力显微镜（AFM）研究了薄膜的表面成分、形貌和原子结构.对于单个沉积的Bi BL，晶格常数与衬底的晶格常数相匹配，并且与最上面的Se原子相邻的Bi原子位于类面心立方的位置。当沉积第二个Bi双层时，它与衬底不相称。随着沉积的Bi膜的厚度进一步增加，晶格参数演变为体Bi（0001）的晶格参数。在120°C下退火多BL膜之后，第一相称Bi BL保持完整，但是附加BL聚集以形成较厚的Bi岛。这些结果表明，Bi $_2$ Se $_3$上的单个Bi BL是特别稳定的结构。在退火至490°C之后，所有过量的Bi解吸并且Se封端的Bi $_2$ Se $_3$表面被恢复。
