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arXiv 2602.03804cond-mat.mtrl-sci
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晶态Permalloy和非晶态钴薄膜在Si基底上单独沉积时混合各向异性的起源

Origin of mixed anisotropy in crystalline Permalloy and amorphous Cobalt thin films individually deposited on Si substrate

Shiv Nadar Institution of Eminence（施瓦纳德卓越学院）

Kirti Kirti, Baisali Ghadai, Abinash Mishra, Rahulkrishnan R, Sucheta Mondal

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AI总结：

研究通过射频磁控溅射在Si基底上沉积晶态Permalloy和非晶态钴薄膜，探讨其混合各向异性的起源及磁化轴取向变化对自旋电子器件性能的影响。

摘要：

磁各向异性（MA）在决定磁性薄膜的静态和动态行为中起着关键作用。它控制着各种现象，如磁化反转、磁域形成、磁域壁运动、自旋波生成和自旋波传播等。我们研究了通过射频磁控溅射在Si（100）基底上沉积的面心立方Permalloy（fcc-Py）和非晶态钴（a-Co）薄膜的混合各向异性，厚度分别为d=5-125nm和t=5-150nm。采用X射线衍射技术、原子力显微镜和振动样品磁力计研究结构、形貌和磁性性质。我们采用定性方法来理解两种材料中不同各向异性的本质。混合各向异性随着薄膜厚度的变化而变化，对于fcc-Py和a-Co薄膜均如此。详细讨论了生长条件在特定各向异性出现中的作用。由于这些混合各向异性的集体影响，磁化易轴从常规的平面取向发生改变。基于各向异性成分的主导性、其起源以及磁化倾斜方向，我们将样品归类为特定的区域。引入磁化倾斜已被证明是迄今为止提高自旋电子器件性能的极创新方法。对溅射沉积的晶态和非晶态磁性材料的一对一比较对建立更牢固的基础是有益的。

英文摘要：

Magnetic anisotropy (MA) plays a crucial role in deciding both static and dynamic behaviour of magnetic thin films. It controls various phenomena, such as magnetization reversal, domain formation, domain-wall motion, spin-wave generation, and spin-wave propagation etc. We investigate the mixed anisotropies in face-centred-cubic Permalloy (fcc-Py) and amorphous Cobalt (a-Co) thin films deposited via rf magnetron sputtering on Si (100) substrate with thicknesses, d = 5-125 nm and t = 5-150 nm, respectively. X-ray diffraction technique, atomic force microscopy, and vibrating sample magnetometry are employed to study the structural, morphological, and magnetic properties. We adopt a qualitative approach to understand the nature of different anisotropies present in both materials. Mixed anisotropies evolve with film thicknesses for both fcc-Py and a-Co films. The role of growth conditions in the emergence of specific anisotropies is discussed in detail. An alteration of the magnetization easy axis from the conventional in-plane orientation is evidenced due to the collective influence of these mixed anisotropies. Based on the dominance of anisotropy components, their origin, and the direction of magnetization tilt, we categorize our samples as belonging to specific regimes. Introduction of magnetization tilt has been proven to be an extremely innovative way to improve the performance of spintronic devices so far. The one-to-one comparison between a sputter-deposited crystalline and an amorphous magnetic material could be beneficial for building a stronger foundation for that.

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