在H-Si（100）基片上生长适用于聚焦离子束直接磁构图的亚稳态fcc结构Fe78Ni22薄膜
The growth of metastable fcc Fe78Ni22 thin films on H-Si(100) substrates suitable for focused ion beam direct magnetic patterning
摘要：
本文研究了在硅衬底上生长亚稳面心立方非磁性Fe_（78）Ni_（22）薄膜。这些膜在离子束照射时经历磁性（顺磁性到铁磁性）和结构（面心立方到体心立方）相变，因此可以用作通过聚焦离子束直接写入磁性纳米结构的模板。到目前为止，这些薄膜仅在单晶Cu（100）衬底上制备。我们发现，可变形的Fe 78 Ni 22薄膜也可以制备在氢终止的Si（100）与130 nm厚的Cu（100）缓冲层。H-Si（100）衬底可以通过氢氟酸蚀刻或通过在1200°C下退火然后吸附原子氢来制备。采用超高真空热蒸发法制备了Cu（100）缓冲层和Fe 78 Ni 22 fcc亚稳薄膜。采用4keV Ar+离子辐照原位转变和30 keV Ga+聚焦离子束异位转变，利用磁光Kerr效应磁强计研究了薄膜的磁性能。用标准硅晶片代替昂贵的铜单晶衬底极大地扩展了亚稳顺磁薄膜在聚焦离子束直接磁图案化中的应用可能性。
英文摘要：
We have studied the growth of metastable face-centered-cubic, non-magnetic Fe78Ni22 thin films on silicon substrates. These films undergo a magnetic (paramagnetic to ferromagnetic) and structural (fcc to bcc) phase transformation upon ion beam irradiation and thus can serve as a template for direct writing of magnetic nanostructures by the focused ion beam. So far, these films were prepared only on single crystal Cu(100) substrates. We show that transformable Fe78Ni22 thin films can also be prepared on a hydrogen-terminated Si(100) with a 130-nm-thick Cu(100) buffer layer. The H-Si(100) substrates can be prepared by hydrofluoric acid etching or by annealing at 1200°C followed by adsorption of atomic hydrogen. The Cu(100) buffer layer and Fe78Ni22 fcc metastable thin film were deposited by thermal evaporation in an ultra-high vacuum. The films were consequently transformed in-situ by 4keV Ar+ ion irradiation and ex-situ by a 30 keV Ga+ focused ion beam, and their magnetic properties were studied by magneto-optical Kerr effect magnetometry. The substitution of expensive copper single crystal substrate by standard silicon wafers dramatically expands application possibilities of metastable paramagnetic thin films for focused ion beam direct magnetic patterning.
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