The peculiarities of thermal expansion of $bcc$ and $fcc$ zirconium films with (100) and (110) crystallographic orientations are studied at a constant zero pressure by the molecular dynamics (MD) method with a many-body interatomic interaction potential obtained in the embedded atom model. It is shown that after relaxation the cubic lattices become tetragonal ($bct$ and $fct$), and for the metastable $fct$ films the linear coefficients of thermal expansion in the film plane have a negative value in a wide temperature range. The total and local vibrational density of states (VDOS) polarized along the $x,y,z$ axes is calculated for the surface and interior layers of $bct$ and $fct$ Zr films as a function of the temperature. It is shown that the peculiarities of the behavior of the vibrational density of states of surface atomic layers manifest themselves in the anisotropy of the changes of the film lattice parameters with temperature variation. A decrease in the lattice parameters with increasing temperature is observed in the directions where there occurs a softening of the local vibrational modes.
The effect of electronic entropy on temperature peculiarities of the frequency characteristics of two interacting anharmonic vibrational modes in $β-$Zr
Physical Properties and Thermal Stability of Zirconium Platinum Nitride Thin Films
ETH Zurich(苏黎世联邦理工学院);Laboratory for Nanometallurgy, Department of Materials, ETH Zurich(苏黎世联邦理工学院材料系纳米冶金实验室);Ion Beam Physics, Department of Physics, ETH Zurich(苏黎世联邦理工学院物理系离子束物理)
Band structure of silicene on the zirconium diboride (0001) thin film surface - convergence of experiment and calculations in the one-Si-atom Brillouin zone
Thin-film based phase plates for transmission electron microscopy fabricated from metallic glasses
薄膜基相位片是透射电子显微镜(TEM)中增强弱相位物体对比度的常用工具。薄膜通常由非晶碳组成,在强电子束照射下,非晶碳会迅速退化。最近的研究集中在寻找具有改进的材料稳定性的替代材料。本工作提出了基于薄膜的相位板制造的金属玻璃合金,其特征在于高导电性和非晶结构。制备了锆基合金Zr 65.0 Al 7.5 Cu 27.5(ZAC)的薄膜,并对其相移特性进行了测试。ZAC合金膜的研究,通过不同的TEM技术,揭示了一系列有益的特性。特别有利的是非弹性等离子体激元散射的小概率,这有望改善相衬TEM中基于薄膜的相板的性能。
Chalcogenide perovskite BaZrS3 thin-film electronic and optoelectronic devices by low temperature processing
由于其优异的可见光吸收和高化学稳定性,硫属钙钛矿钡锆硫化物在过去几年中作为用于光电子学的混合卤化物钙钛矿的潜在替代物而引起了显著关注。然而,BaZrS 3薄膜在1000 ℃以上的高加工温度严重限制了它们在器件应用中的潜力。在此,我们报告的BaZrS 3薄膜的合成温度低至500 ℃,通过改变化学反应途径。X射线衍射和拉曼光谱证实了BaZrS 3薄膜为单相结构。原子力显微镜和扫描电子显微镜表明,晶体尺寸和表面粗糙度一致降低退火温度。较低的温度进一步消除了与高温处理相关的硫空位和碳污染。在较低温度下合成硫属化物钙钛矿薄膜的能力消除了其器件制造的主要障碍。光电探测器表现出快速响应和80的开/关比。所制造的场效应晶体管显示出双极行为,电子和空穴迁移率分别为16.8 cm 2/Vs和2.6 cm 2/Vs。
Structural peculiarities of $\varepsilon$-Fe$_2$O$_3$ / GaN epitaxial layers unveiled by high-resolution transmission electron microscopy and neutron reflectometry
采用脉冲激光沉积法在半导体GAN(0001)衬底上生长了亚稳铁氧化物($\varepsilon$ -Fe $_2$ O $_3$)外延膜,并对其晶体学特性进行了结构研究。纳米级$\varepsilon$ -Fe $_2$ O $_3$薄膜的柱状结构已被首次使用高分辨电子显微镜(HRTEM)直接空间技术辅以倒易空间方法的高能电子衍射和彩色增强HRTEM图像傅立叶滤波。通过中子反射仪和能量色散X射线光谱法对$\varepsilon$ -Fe $_2$ O $_3$ / GAN界面形成进行了深度分辨密度和化学成分分析,进一步扩展了对界面形成的研究。研究结果揭示了位于$\varepsilon$ -Fe $_2$ O $_3$ / GAN界面的几纳米厚的低密度过渡层的性质和来源。该层的性质的详细知识被认为对于$\varepsilon$ -Fe $_2$ O $_3$ / GAN异质结构的开发是非常重要的,所述异质结构可以潜在地成为具有室温磁电耦合的基于铁氧化物的半导体上铁器件的一部分。
Oxygen vacancy mediated cubic phase stabilization at room temperature in pure nano-crystalline Zirconia films: A combined experimental and first-principles based investigation
Synthesis and Characterization of Compositionally Complex (Gd/Ho/Er/Dy)2Zr2O7 Thin Film Combinatorial Library
The University of Tennessee, Knoxville(田纳西大学诺克斯维尔分校);Laser Thermal(激光热技术公司);The University of Virginia(弗吉尼亚大学);Center for Nanophase Materials, Oak Ridge National Laboratory(橡树岭国家实验室纳米材料中心);National Synchrotron Light Source II, Brookhaven National Laboratory(布鲁克海文国家实验室第二代同步辐射光源);National Institute of Standards and Technology(美国国家标准与技术研究院)
Phase compositions of Si oxynitride: A comprehensive thermodynamic modeling study
V. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine(乌克兰国家科学院瓦·拉什卡拉诺夫半导体物理研究所);Educational Scientific Institute of High Technologies, Taras Shevchenko National University of Kyiv(基辅塔拉斯舍甫琴科国立大学高等技术教育科学研究所);National Technical University of Ukraine “Igor Sikorsky Kyiv Polytechnic Institute”(乌克兰国立技术大学“伊戈尔·西科尔斯基基辅理工学院)