In this study, the microstructure changes of Ti3SiC2 MAX phase material induced by helium irradiation and evolution with a sequence of different helium irradiation doses of 5E15, 1E16, 5E16 and 1E17cm-2 at room temperature (RT) were characterized with grazing incidence X-ray diffraction (GIXRD) and Raman spectra analysis. The irradiation damage process of Ti3SiC2 can be roughly divided into three stages according to the level of helium irradiation dose: (1) for a low damage dose, only crystal and damaged Ti3SiC2 exit; (2) at a higher irradiation dose, there is some damaged TiC phase additionally; (3) with a much higher irradiation dose, crystal TiC phase could be found inside the samples as well. Moreover, the 450C 5E16cm-2 helium irradiation on Ti3SiC2 has confirmed that Ti3SiC2 has much higher irradiation tolerance at higher temperature, which implies that Ti3SiC2 could be a potential future structural and fuel coating material working at high temperature environments.
The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties has been demonstrated. In this work, the luminescent properties of SiO2/Si structures irradiated with Kr+ ions at different doses and annealed at 800 °C have been systematically investigated. For such structures, a photoluminescence line at ~ 1240 nm is observed and associated with the formation of hexagonal 9R-Si phase inclusions. It is found that the vari…
Predicting volume swelling of structural materials in nuclear reactors under high-dose neutron irradiations based on existing low-dose experiments or irradiation data with high-dose-rate energetic particles has been a long-standing challenge for safety evaluation and rapidly screening irradiation-resistant materials in nuclear energy systems. Here, we build an Additional Defect Absorption Model that describes the irradiation-induced swelling effects produced by energetic electrons, heavy-ions, and neutrons by considering additional defect sinks inherent in the irradiation process. Based on thi…
Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology
研究了用0.2 μ m SOI工艺制作的部分耗尽SOI器件的总电离剂量辐照效应。实验结果表明,一个原始的现象,即对前栅和背栅晶体管的最坏情况下的偏置的照射偏置配置。为了理解这一机制,提出了一个电荷分布模型。我们认为器件性能的下降是由于浅沟槽隔离(STI)氧化层底部角落处的辐射感生正电荷所致。另外,比较了短沟道和长沟道器件在不同漏偏压下的辐照响应,短沟道晶体管的漏电流和阈值电压退化较大。用偶极理论解释了TID增强的短沟道效应。
Tungsten is the main candidate material for plasma-facing armour components in future fusion reactors. Bombardment with energetic fusion neutrons causes collision cascade damage and defect formation. Interaction of defects with helium, produced by transmutation and injected from the plasma, modifies defect retention and behaviour. Here we investigate the residual lattice strains caused by different doses of helium-ion-implantation into tungsten and tungsten-rhenium alloys. Energy and depth-resolved synchrotron X-ray micro-diffraction uniquely permits the measurement of lattice strain with sub-…
Ion irradiation provides a promising substitute to neutron tests for investigating the effects of radiation on materials for fission and fusion reactor plants. Here we show proton irradiation can quantitatively reproduce precipitation that leads to embrittlement in reactor pressure vessel steels, at dose rates 10,000 times greater than experienced in fission reactor operation. Small-angle neutron scattering (SANS) is used to characterize precipitate size distributions in copper-containing steels irradiated to average doses of approx. 7 mdpa with 5 MeV protons. Comparing our results with the li…
Damage dose dependence of deuterium retention in high-temperature self-ion irradiated tungsten
Max Planck Institute for Plasma Physics(马克斯·普朗克等离子体物理研究所);Karlsruhe Institute of Technology (KIT), Institute for Applied Materials - Applied Materials Physics(卡尔斯鲁厄理工学院应用材料研究所)
Here, we report a study on the radiation resistance enhancement of Gd2Zr2O7 nanograin ceramics, in which amorphization, cell volume expansion and multi-stage helium (He) bubble formation are investigated and discussed. Gd2Zr2O7 ceramics with a series of grain sizes (55-221 nm) were synthesized and irradiated by 190 keV He ion beam up to a fluence of 5x10^17 ions/cm2. Both the degree of post irradiation cell volume expansion and the amorphization fraction appear to be size dependent. As the average grain size evolves from 55 to 221 nm, the degree of post irradiation cell volume expansion increa…
Ti3SiC2 is a potential structural material for nuclear reactor applications. However, He irradiation effects in this material are not well understood, especially at high temperatures. Here, we compare the effects of He irradiation in Ti3SiC2 at room temperature (RT) and at 750 °C. Irradiation at 750 °C was found to lead to extremely elongated He bubbles that are concentrated in the nano-laminate layers of Ti3SiC2, whereas the overall crystal structure of the material remained intact. In contrast, at RT, the layered structure was significantly damaged and highly disordered after irradiation. Ou…
We show a method to control magnetic interfacial effects in multilayers with Dzyaloshinskii-Moriya interaction (DMI) using helium (He$^{+}$) ion irradiation. We report results from SQUID magnetometry, ferromagnetic resonance as well as Brillouin light scattering results on multilayers with DMI as a function of irradiation fluence to study the effect of irradiation on the magnetic properties of the multilayers. Our results show clear evidence of the He$^{+}$ irradiation effects on the magnetic properties which is consistent with interface modification due to the effects of the He$^{+}$ irradiat…
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively switching circuit components from these novel materials. Here we report on the scalable experimental realisation of lateral on-dielectric memtransistors from monolayer single-crystal molybdenum disulfide (MoS2) utilising a focused helium ion beam. Site-specific irradiation with the probe of a helium ion microscope (HIM) allows for the creation of charged defect…
Cross-sectional helium irradiation reveals interface-controlled bubble evolution in Cr/CrAlSiN multilayer coatings on zirconium alloys
Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences(中国科学院宁波材料技术与工程研究所);Ningbo University of Technology(宁波工程学院);Harbin Engineering University(哈尔滨工程大学);Southwest University of Science and Technology(西南科技大学);Czech Technical University in Prague(布拉格捷克理工大学);Qianwan Institute of CNITECH(国创中心千湾研究院);Advanced Energy Science and Technology Guangdong Laboratory(先进能源科学与技术广东省实验室);University of Chinese Academy of Sciences(中国科学院大学);University of Southampton(南安普顿大学)
Mechanism of Oxygen Reduction via Chemical Affinity in NiO/SiO2 Interfaces Irradiated with keV Energy Hydrogen and Helium Ions for Heterostructure Fabrication
Magneto-ionic control of magnetic properties through ionic migration has shown promise in enabling new functionalities in energy-efficient spintronic devices. In this work, we demonstrate the effect of helium ion irradiation and oxygen implantation on magneto-ionically induced exchange bias effect in Gd/Ni$_{0.33}$Co$_{0.67}$O heterostructures. Irradiation using $He^+$ leads to an expansion of the Ni$_{0.33}$Co$_{0.67}$O lattice due to strain relaxation. At low He+ fluence ($\leq$ 2$\times$10$^{14}$ ions cm$^{-2}$), the redox-induced interfacial magnetic moment initially increases, owing to en…
Thin foils of the double solid solution $(Zr{_0.5},Ti{_0.5})_{2}(Al_{0.5},Sn_{0.5})C$ MAX phase were in situ irradiated in a transmission electron microscope (TEM) up to a fluence of $1.3\times10^{17} ions$ $cm^{-2}$ (${\sim}$ 7.5 dpa), using 6 keV $He^{+}$ ions. Irradiations were performed in the 350-800 °C temperature range. In situ and post-irradiation examination (PIE) by TEM was used to study the evolution of irradiation-induced defects as function of dose and temperature. Spherical He bubbles and string-like arrangements thereof, He platelets, and dislocation loops were observed. Disloca…
Surface bubbling and helium retention of pure aluminum and a solid solution of aluminum-gallium(Ga) alloy exposed to low-energy He plasma has been investigated with the fluence of 1.8E24 He/m2 at room temperature . Surface morphology observations show that after irradiation, the average size of He bubbles on Al-1.8 at.% Ga alloy is around 1.8 micro metre, smaller than that on pure Al. Ga doping noticeably increases the area density of the bubble. The thermal desorption spectroscopyshows that the release amount of He in Al-1.8 at.% Ga alloy is 1.77E21 He/m2, nearly three orders of magnitude hig…
The practical damage of silicon bipolar devices subjected to mixed ionization and displacement irradiations is usually evaluated by the sum of separated ionization and displacement damages. However, recent experiments show clear difference between the practical and summed damages, indicating significant irradiation synergistic effects (ISEs). Understanding the behaviors and mechanisms of ISEs is essential to predict the practical damages. In this work, we first make a brief review on the state of the art, critically emphasizing on the difficulty encountered in previous models to understand the…
Predicting the dramatic changes in material properties caused by irradiation damage is key for the design of future nuclear fission and fusion reactors. Self-ion implantation is an attractive tool for mimicking the effects of neutron irradiation. However, the damaged layer of implanted samples is only few microns thick, making it difficult to estimate macroscopic properties. Here we address this challenge using a combination of experimental and modelling techniques. We concentrate on self-ion-implanted tungsten, the front-runner for fusion armour components and a prototypical bcc material. To …
Fluorescent nanodiamonds containing negatively-charged nitrogen-vacancy (NV$^-$) centers are promising for a wide range of applications, such as for sensing, as fluorescence biomarkers, or to hyperpolarize nuclear spins. NV$^-$ centers are formed from substitutional nitrogen (P1 centers) defects and vacancies in the diamond lattice. Maximizing the concentration of NVs is most beneficial, which justifies the search for methods with a high yield of conversion from P1 to NV$^-$. We report here the characterization of surface cleaned fluorescent micro- and nanodiamonds, obtained by irradiation of …
The defect-rich morphology of YBa$_{2}$Cu$_{3}$O$_{7-δ}$ (YBCO) thin films leads to a glass-like arrangement of Abrikosov vortices which causes the resistance to disappear in vanishing current densities. This vortex glass consists of entangled vortex lines and is identified by a characteristic scaling of the voltage-current isotherms. Randomly distributed columnar defects stratify the vortex lines and lead to a Bose glass. Here, we report on the observation of an ordered Bose glass in a YBCO thin film with a hexagonal array of columnar defects with 30 nm spacings. The periodic pinning landscap…
We report on the growth, structural and optical properties of YAlO3 single crystals grown by optical floating zone technique. Powder X-ray diffraction and Raman spectroscopic studies confirm the phase purity of the crystals. Raman analysis reveals that the intensity and line-width of Raman bands increase significantly with beta irradiation indicating the formation of structural defects in YAlO3 lattice. The optical properties are studied through UV-visible absorption, and photoluminescence emission and excitation spectroscopies under pre- and post- beta irradiation. The optical studies indicat…
Ultrafast X-ray induced damage and nonthermal melting in cadmium sulfide
Institute of Physics, Czech Academy of Sciences(捷克科学院物理研究所);Institute of Plasma Physics, Czech Academy of Sciences(捷克科学院等离子体物理研究所);Higher Institute of Technologies and Applied Sciences, University of Havana(哈瓦那大学高等技术与应用科学学院)