用氦离子束局部辐照制备神经形态MoS2记忆晶体管
Neuromorphic MoS2 memtransistors fabricated by localised helium ion beam irradiation
摘要：
二维层状半导体最近已经成为下一代低功耗非易失性存储器的有吸引力的构建块。然而，挑战仍然存在于可控的亚微米制造的双极磁阻开关电路组件从这些新材料。在这里，我们报告的可扩展的实验实现的横向介电memtransistors从单层单晶二硫化钼（MoS 2）利用聚焦氦离子束。用氦离子显微镜（HIM）的探针进行特定位点的照射允许在MoS 2晶格中产生带电缺陷。这些局部接种缺陷在所施加的电场中的可逆漂移调制半导体沟道的电阻，从而实现纳米级上的多功能忆阻功能。我们发现，该器件可以可靠地保持其电阻比和设置偏置数百个开关周期，扫描频率高达2.9 V/s，相对较低的漏源偏置。我们还证明了长时程增强和抑郁症与尖锐的习惯，有望在未来的神经形态架构的应用。这项工作推进了忆阻器件的缩小规模的进展，而不会牺牲关键的性能参数，如功耗或其突触仿真的适用性。
英文摘要：
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively switching circuit components from these novel materials. Here we report on the scalable experimental realisation of lateral on-dielectric memtransistors from monolayer single-crystal molybdenum disulfide (MoS2) utilising a focused helium ion beam. Site-specific irradiation with the probe of a helium ion microscope (HIM) allows for the creation of charged defects in the MoS2 lattice. The reversible drift of these locally seeded defects in the applied electric field modulates the resistance of the semiconducting channel, enabling versatile memristive functionality on the nanoscale. We find the device can reliably retain its resistance ratios and set biases for hundreds of switching cycles at sweep frequencies of up to 2.9 V/s with relatively low drain-source biases. We also demonstrate long-term potentiation and depression with sharp habituation that promises application in future neuromorphic architectures. This work advances the down-scaling progress of memristive devices without sacrificing key performance parameters such as power consumption or its applicability for synaptic emulation.
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