多晶单层MoS2的多终端记忆晶体管
Multi-Terminal Memtransistors from Polycrystalline Monolayer MoS2
摘要：
在过去的十年中，已经开发了一种称为忆阻器的2端无源电路元件用于非易失性电阻式随机存取存储器，并且最近显示出用于神经形态计算的前景。与闪存相比，忆阻器具有更高的耐久性、多位数据存储和更快的读/写时间。然而，尽管双端忆阻器已经证明了基本的神经功能，但人脑中的突触数量超过神经元1000倍以上，这意味着需要多端忆阻器来执行复杂的功能，例如异突触可塑性。先前尝试超越2端忆阻器的尝试包括3端Widrow-Hoff忆阻器和具有纳米离子栅极或浮栅的场效应晶体管，尽管在晶体管中没有忆阻开关。在这里，我们报告了多端混合忆阻器和晶体管（即，记忆晶体管）使用多晶单层MoS 2。二维（2D）的二硫化钼记忆晶体管显示栅极可调谐性，在个别国家的4个数量级，除了大的开关比与高循环耐力和长期保持的状态。除了传统的神经学习行为的长期增强/抑制，6端的二硫化钼记忆晶体管具有栅极可调的异突触功能，这是无法实现使用2端忆阻器。例如，通过向调制端子施加电压脉冲，一对两个浮动电极（突触前和突触后神经元）之间的电导变化10倍。在原位扫描探针显微镜，低温电荷传输测量，和设备建模显示，偏置引起的MoS 2缺陷运动驱动电阻开关动态变化的肖特基势垒高度。
英文摘要：
In the last decade, a 2-terminal passive circuit element called a memristor has been developed for non-volatile resistive random access memory and has more recently shown promise for neuromorphic computing. Compared to flash memory, memristors have higher endurance, multi-bit data storage, and faster read/write times. However, although 2-terminal memristors have demonstrated basic neural functions, synapses in the human brain outnumber neurons by more than a factor of 1000, which implies that multiterminal memristors are needed to perform complex functions such as heterosynaptic plasticity. Previous attempts to move beyond 2-terminal memristors include the 3-terminal Widrow-Hoff memistor and field-effect transistors with nanoionic gates or floating gates, albeit without memristive switching in the transistor. Here, we report the scalable experimental realization of a multi-terminal hybrid memristor and transistor (i.e., memtransistor) using polycrystalline monolayer MoS2. Two-dimensional (2D) MoS2 memtransistors show gate tunability in individual states by 4 orders of magnitude in addition to large switching ratios with high cycling endurance and long-term retention of states. In addition to conventional neural learning behavior of long-term potentiation/depression, 6-terminal MoS2 memtransistors possess gate-tunable heterosynaptic functionality that is not achievable using 2-terminal memristors. For example, the conductance between a pair of two floating electrodes (pre-synaptic and post-synaptic neurons) is varied by 10X by applying voltage pulses to modulatory terminals. In situ scanning probe microscopy, cryogenic charge transport measurements, and device modeling reveal that bias-induced MoS2 defect motion drives resistive switching by dynamically varying Schottky barrier heights.
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