Recently, nanolaminated ternary carbides have attracted immense interest due to the concomitant presence of both ceramic and metallic properties. Here, we grow nanolaminate Ti3AlC2 thin films by pulsed laser deposition on c-axis-oriented sapphire substrates and, surprisingly, the films are found to be highly oriented along the (103) axis normal to the film plane, rather than the (000l) orientation. Multiple characterization techniques are employed to explore the structural and chemical quality of these films, the electrical and optical properties, and the device functionalities. The 80-nm thick Ti3AlC2 film is highly conducting at room temperature (resistivity of 50 micro ohm-cm), and a very-low-temperature coefficient of resistivity. The ultrathin (2 nm) Ti3AlC2 film has fairly good optical transparency and high conductivity at room temperature (sheet resistance of 735 ohm). Scanning tunneling microscopy reveals the metallic characteristics (with finite density of states at the Fermi level) at room temperature. The metal-semiconductor junction of the p-type Ti3AlC2 film and n-Si show the expected rectification (diode) characteristics, in contrast to the ohmic contact behavior in the case of Ti3AlC2 on p-Si. A triboelectric-nanogenerator-based touch-sensing device, comprising of the Ti3AlC2 film, shows a very impressive peak-to-peak open-circuit output voltage of 80 V. These observations reveal that pulsed laser deposited Ti3AlC2 thin films have excellent potential for applications in multiple domains, such as bottom electrodes, resistors for high-precision measurements, Schottky diodes, ohmic contacts, fairly transparent ultrathin conductors, and next-generation biomechanical touch sensors for energy harvesting.
Nanolaminated Al2O3/HfO2 thin films as well as single Al2O3 and HfO2 layers have been grown as gate dielectrics by Plasma Enhanced Atomic Layer Deposition (PEALD) technique on silicon carbide (4H-SiC) substrates. All the three dielectric films have been deposited at temperature as low as 250°C, with a total thickness of about 30 nm and in particular, the nanolaminated Al2O3/HfO2 films have been fabricated by alternating nanometric Al2O3 and HfO2 layers. The structural characteristics and dielectrical properties of the nanolaminated Al2O3/HfO2 films have been evaluated and compared to those of …
Carbides stand out because of their high hardness and wear-resistance. Thus these materials are often discussed for coatings of machine tools etc. Within this work Boron Carbide (B4C) and Carbide (C) thin films were deposited on Si (100) substrates by pulsed-laser deposition technique. In order to improve the wear-resistance of the deposited films, we introduced a new working technique including the application of a second excimer laser in a special working mode. Thereby one laser was used to ablate the carbide material from a target and to deposit the material on the substrate. The light of t…
Nanocomposite thin films formed by gold nanoparticles embedded in a nickel oxide matrix have been synthesized by a new variation of the pulsed laser deposition technique. Two actively synchronized laser sources, a KrF excimer laser at 248 nm and an Nd:YAG laser at 355 nm, were used for the simultaneous ablation of nickel and gold targets in oxygen ambient. The structural, morphological, and electrical properties of the obtained nanocomposite films were investigated in relation to the fluence of the laser irradiating the gold target. The nanocomposite thin films were tested as electrochemical h…
We have grown Au/Ag modulated nanostructured thin films by pulsed laser deposition using metallic targets. The growths performed at room temperature involved deposition of alternate layers of the two metals with larger thickness of Au and much lower thickness of Ag (two cases) on crystalline silicon (100) and quartz substrates. However, the characterization revealed that nanostructured configuration is realized in the film. We characterized the films by x-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM) with energy dispersive analysis of x-rays (EDAX), magnetization (…
Controlling the crystalline structure of Hafnium Zirconate and its epitaxial relationship to a semiconducting electrode has a high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using Pulsed Laser Deposition, a phase pure, ultra-thin film of HfZrO4 is grown epitaxially on a GaN (0001) / Si (111) template. Since standard microscopy techniques do not allow to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast (DPC) Scanning Transmission Electron Mi…
We report a detailed study of surface and interface properties of pulsed-laser deposited NiMnSb films on Si (100) substrate as a function of film thickness. As the thickness of films is reduced below 35 nm formation of a porous layer is observed. Porosity in this layer increases with decrease in NiMnSb film thickness. These morphological changes of the ultra thin films are reflected in the interesting transport and magnetic properties of these films. On the other hand, there are no influences of compositional in-homogeneity and surface/interface roughness on the magnetic and transport properti…
The growth mode, magnetic and magneto-optical properties of epitaxial Au/Co/Au(111) ultrathin trilayers grown by pulsed-laser deposition (PLD) under ultra-high vacuum are presented. Sapphire wafers buffered with a single-crystalline Mo(110) bilayer were used as substrates. Owing to PLD-induced interfacial intermixing at the lower Co/Au(111) interface, a layer-by-layer growth mode is promoted. Surprisingly, despite this intermixing, ferromagnetic behavior is found at room temperature for coverings starting at 1 atomic layer (AL). The films display perpendicular magnetization with anisotropy con…
Iron nanowires with a square cross section are grown by pulsed electrodeposition within a newly developed nanochannel template that allows for easy characterization. Measurements of the magnetoresistance as a function of magnetic field and temperature are performed within a large parameter window allowing for the investigation of the magnonic contribution to the magnetoresistance of electrodeposited iron nanowires. Values for the temperature dependent magnon stiffness D(T) are extracted.
We report pulsed laser deposition synthesis and characterization of polycrystalline Fe1-xCox Si thin films on Si (111). X-ray diffraction, transmission electron, and atomic force microscopies reveal films to be dense, very smooth, and single phase with a cubic B20 crystal structure. Ferromagnetism with significant magnetic hysteresis is found for all films including nominally pure FeSi films in contrast to the very weak paramagnetism of bulk FeSi. For Fe1-xCoxSi this signifies a change from helimagnetism in bulk, to ferromagnetism in thin films. These ferromagnetic thin films are promising as …
Nanostrucured Europium oxide and hydroxide films were obtained by pulsed Nd:Yag (532 nm) laser ablation of an Europium metallic target, in the presence of a 1 mbar Helium buffer atmosphere. Both the produced film and the ambient plasma were characterized. The plasma was monitored by an electrostatic probe, for plume expansion in vacuum or in the presence of the buffer atmosphere. The time evolution of the ion saturation current was obtained for several probe to substrate distances. The results show the splitting of the plume into two velocity groups, being the lower velocity profile associated…
The preparation of Ag 2+x Se thin films with thicknesses between 4 nm and 3000 nm by pulsed laser deposition on single crystalline NaCl and MgO substrates is reported. The films are perfectly dense and show a good lateral uniformity with a small number of defects. The microstructure of the films corresponds to a nanoparquet, being composed of two different phases of silver selenide. One phase is identified as the Naumannite low temperature phase of silver selenide, the structure of the other phase has not been reported in detail before and probably represents a metastable phase. Silver-rich fi…
We have investigated the magnetodynamic properties of $\text{La}_{0.7}\text{Sr}_{0.3}\text{MnO}_3$ (LSMO) films of thickness 10, 15 and 30 nm grown on (111)-oriented SrTi$\text{O}_3$ (STO) substrates by pulsed laser deposition. Ferromagnetic resonance (FMR) experiments were performed in the temperature range 100--300 K, and the magnetodynamic damping parameter $α$ was extracted as a function of both film thickness and temperature. We found that the damping is lowest for the intermediate film thickness of 15 nm with $α\approx 2 \cdot 10^{-3}$, where $α$ is relatively constant as a function of t…
CdTe and CdS are emerging as the most promising materials for thin film photovoltaics in the quest of the achievement of grid parity. The major challenge for the advancement of grid parity is the achievement of high quality at the same time as low fabrication cost. The present paper reports the results of the new deposition technique, Pulsed Plasma Deposition (PPD), for the growth of the CdTe layers on CdS/ZnO/quartz and quartz substrates. The PPD method allows to deposit at low temperature. The optical band gap of deposited layers is 1.50 eV, in perfect accord with the value reported in the l…
The subtle balance of electronic correlations, crystal field splitting and spin--orbit coupling in layered Ir$^{4+}$ oxides can give rise to novel electronic and magnetic phases. Experimental progress in this field relies on the synthesis of epitaxial films of these oxides. However, the growth of layered iridates with excellent structural quality is a great experimental challenge. Here we selectively grow high quality single--phase films of Sr$_2$IrO$_4$, Sr$_3$Ir$_2$O$_7$, and SrIrO$_3$ on various substrates from a single Sr$_3$Ir$_2$O$_7$ target by tuning background oxygen pressure and epita…
Lanthanum manganite, LaMnO (LMO) is the parent compound for a class of hole doped(e.g. La1-xCaxMnO3, La1-xSrxMnO3) and electron doped (e.g. . La1-xCexMnO3, La1-xSnxMnO3) perovskite complex oxide materials. Strong correlation between the spin,lattice, charge and orbital degrees of freedom is a hallmark of these class of materials (popularly known as manganites). Competition and interplay of these degrees of freedom lead to a wide range of interesting electronic behavior including half-metallicity, colossal magneto-resistivity, etc. Although a lot of experimental research has been carried out on…
Zinc Oxide (ZnO) semiconductor is ideal candidates for ultra-violet (UV) photodetector due to its promising optoelectronic properties. Photodetectors based on ZnO nanostructures show very high photoconductivity under UV light, but they are plagued by slow photo-response time as slow as several tens of hours, even more. Most of the studies claimed that atmospheric adsorbates such as water and oxygen create charge traps states on the surface and remarkably increase both the photoconductivity and response time, but there are also limited studies that claiming the defect induced states acting as h…
We present a comprehensive study of the thickness dependence of static and magneto-dynamic magnetic properties of La$_{0.7}$Sr$_{0.3}$MnO$_3$. Epitaxial pulsed laser deposited La$_{0.7}$Sr$_{0.3}$MnO$_3$ / SrTiO$_3$(001) thin films in the range from 3 unit cells (uc) to 40 uc (1.2 - 16 nm) have been investigated through ferromagnetic resonance spectroscopy (FMR) and SQUID magnetometry at variable temperature. Magnetodynamically, three different thickness, $d$, regimes are identified: 20 uc $\lesssim d$ uc where the system is bulk like, a transition region 8 uc $\le d \lesssim 20$ uc where the …
Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at base pressures of 10$^{-4}$ - 10$^{-3}$ Pa. A detailed structural analysis, by X-Ray Diffraction and Raman, allowed to assess the amorphous nature of the deposited films as well as to determine the base pressure that prevents boron oxide formation. In addition the crystallization dynamics has been characterized showing that film crystallinity already improv…
We report the successful fabrication of superconducting tantalum nitride (TaN) thin films using a pulsed laser deposition technique with 1064 nm radiation. Films with thickness $ \sim $ 100 nm deposited on MgO (100) single crystals and on oxidized silicon (SiO$_{2} $) substrates exhibited a superconducting transition temperature of $\sim $ 8 K and 6 K, respectively. The topography of these films were investigated using atomic force and scanning electron microscopy, revealing fairly large area particulate free and smooth surfaces, while the structure of the films were investigated using standar…
Monatomic antimony thin films have recently attracted attention for applications in phase change memory, nanophotonics, and 2D materials. Although some promising results have been reported, the true potential of Sb thin films is still hindered by the scalability issue and the lack of reliable bottom-up production. Here we demonstrate the growth of Sb thin films on a lattice-matching and amorphous substrates using pulsed laser deposition (PLD). C-axis out-of-plane textured Sb thin films were successfully deposited on Sb$_2$Te$_3$ and SiO$_2$\Si$_3$N$_4$ substrates. In the case of growth on Sb$_…
Nanostructured TiO2 thin films were prepared by pulsed laser deposition (PLD) on indium doped tin oxide (ITO) substrates. Results from X-ray photoelectron spectroscopy (XPS) show that Ti 2p core level peaks shift toward the lower binding energy with decrease in the buffer gas pressure (O2:Ar = 1:1). This suggests that oxygen vacancies are created under insufficient oxygen conditions. Anatase to rutile ratio is also found to be system pressure dependent. Under deposition pressure of 750 mTorr only anatase phase was observed even at 1073 K substrate temperature which is much higher that the bulk…
We investigate pulsed laser deposition of LaGaO3/SrTiO3 at 10-1 mbar oxygen background pressure, demonstrating the critical effect of the target-to-substrate distance, dTS, on the interface sheet resistance, Rs. The interface turns from insulating to metallic by progressively decreasing dTS. The analysis of the LaGaO3 plume evidences the important role of the plume propagation dynamics on the interface properties. These results demonstrate the growth of conducting interfaces at an oxygen pressure of 10-1 mbar, an experimental condition where a well-oxygenated heterostructures with a reduced co…
We report on the synthesis of high-quality Co-doped ZnO thin films using the pulsed laser deposition technique on (0001)-Al$_2$O$_3$ substrates performed in an oxidizing atmosphere, using Zn and Co metallic targets. We firstly optimized the growth of ZnO in order to obtain the less strained film. Highly crystallized Co:ZnO thin films are obtained by an alternative deposition from Zn and Co metal targets. This procedure allows an homogenous repartition of the Co in the ZnO wurzite structure which is confirmed by the linear dependance of the out-of-plane lattice parameter as a function of the Co…
Films of the molecular nanomagnet, Mn12-acetate, have been deposited using pulsed laser deposition and a novel variant, matrix assisted pulsed laser evaporation. The films have been characterized by X-ray photoelectron spectroscopy, mass spectrometry and magnetic hysteresis. The results indicate that an increase in laser energy and/or pulse frequency leads to fragmentation of Mn12, whereas its chemical and magnetic integrity is preserved at low laser energy (200 mJ). This technique allows the fabrication of patterned thin film systems of molecular nanomagnets for fundamental and applied experi…
Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.
Here we systematically explore the use of pulsed laser deposition technique (PLD) to grow three basic oxides that have rocksalt structure but different chemical stability in the ambient atmosphere: NiO (stable), MnO (metastable) and EuO (unstable). By tuning laser fluence, an epitaxial single-phase nickel oxide thin-film growth can be achieved in a wide range of temperatures from 10 to 750 °C. At the lowest growth temperature, the out-of-plane strain raises to 1.5%, which is five times bigger than that in a NiO film grown at 750 °C. MnO thin films that had long-range ordered were successfully …
We report on the synthesis of low doping Zn$_{1-x}$Co$_x$O ($0<x<0.1$) thin films on (0001)-Al$_2$O$_3$ substrates. The films were prepared in an oxidizing atmosphere, using the pulsed laser deposition technique starting from Zn and Co metallic targets. We first studied the influence of the strains of ZnO and their stuctural properties. Second, we have investigated the structural and the magnetic properties of the Zn$_{1-x}$Co$_x$O films. We show that at low doping, the lattice parameters and the magnetization of the Zn$_{1-x}$Co$_x$O films depend strongly on the Co concentration.
Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the deposited film and the control of the film morphology by varying the processing parameters of PP-MOCVD - choice of solvent, concentration, and presence of a shield. Aluminum sec-butoxide (ASB) was used as the aluminum source while hexane and toluene were used as the solvents. The films were deposited at 475oC at different precursor concentrations. It was obse…
A special shaping of YAG:Nd^{3+} laser beam profile has been found to improve homogeneity and T_c of YBa_2Cu_3O_{7-δ} films being deposited by the pulsed laser. Targets of a considerably non-stoichiometric composition and substrates of slanting cuts have turned to be necessary for the high-quality film growing. Multiple droplets and solid particles ejected from the target surface by the infrared radiation are removed successfuly from the laser-induced plasma by use of a velocity filter.
We deposited epitaxial thin films of Morphotropic Phase Boundary (MPB) Pb0.65Ba0.35Nb2O6 (PBN:65) on MgO substrates using pulsed laser deposition. Afterwards, a novel transmission optical experiment was developed to measure the electric field-induced bending angle of the thin film sample using a divergent incident light. From which the electric field-induced strain was obtained, and it was used to calculate the electrostrictive constant of the PBN thin film. The result is 0.000875 um2/V2, and it is consistent with what we measured in the reflection experiment.
We present a synthesis/processing method for fabricating ferrimagnetic insulator (Bi-doped yttrium iron garnet) thin films with tunable magnetic anisotropy. Since the desired magnetic properties rely on controllable thickness and successful doping, we pay attention to the entire synthesis/processing procedure (nanopowder synthesis, nanocrystalline target preparation and pulsed laser deposition (PLD)). Atomically flat films were deposited by PLD on (111)-orientated yttrium aluminum garnet. We show a significant enhancement of perpendicular anisotropy in the films, caused by strain-induced aniso…
Possible existence of topologically protected surface in samarium hexaboride has created a strong need for investigations allowing to distinguish between properties coming from the surface states and those originating in the (remaining) bulk. Studies of SmB6 thin films represent a favorable approach allowing well defined variations of the bulk volume that is not affected by surface states. Moreover, thin films are highly desirable for potential technology applications. However, the growth of SmB6 thin films is accompanied by technology problems, which are typically associated with maintaining …
Multiferroic BiFeO3 (BFO) / La0.7Sr0.3MnO3 heterostructured thin films were grown by pulsed laser deposition on polished spark plasma sintered LaAlO3 (LAO) polycrystalline substrates. Both polycrystalline LAO substrates and BFO films were locally characterized using electron backscattering diffraction (EBSD), which confirmed the high-quality local epitaxial growth on each substrate grain. Piezoforce microscopy was used to image and switch the piezo-domains, and the results are consistent with the relative orientation of the ferroelectric variants with the surface normal. This high-throughput s…
We report on how different cluster deposition regimes can be obtained and observed by in situ Scanning Tunneling Microscopy (STM) by exploiting deposition parameters in a pulsed laser deposition (PLD) process. Tungsten clusters were produced by nanosecond Pulsed Laser Ablation in Ar atmosphere at different pressures and deposited on Au(111) and HOPG surfaces. Deposition regimes including cluster deposition-diffusion-aggregation (DDA), cluster melting and coalescence and cluster implantation were observed, depending on background gas pressure and target-to-substrate distance which influence the…
We report structural, optical, temperature and frequency dependent dielectric, and energy storage properties of pulsed laser deposited (100) highly textured BaZr(x)Ti(1-x)O3 (x = 0.3, 0.4 and 0.5) relaxor ferroelectric thin films on La0.7Sr0.3MnO3/MgO substrates which make this compound as a potential lead-free capacitive energy storage material for scalable electronic devices. A high dielectric constant of ~1400 - 3500 and a low dielectric loss of <0.025 were achieved at 10 kHz for all three compositions at ambient conditions. Ultrahigh stored and recoverable electrostatic energy densities as…
Here we report on the structural, optical, electrical and magnetic properties of Co-doped and (Co,Mo)-codoped SnO2 thin films deposited on r-cut sapphire substrates by pulsed laser deposition. Substrate temperature during deposition was kept at 500 C. X-ray diffraction analysis showed that the undoped and doped films are crystalline with predominant orientation along the [101] direction regardless of the doping concentration and doping element. Optical studies revealed that the presence of Mo reverts the blue shift trend observed for the Co-doped films. For the Co and Mo doping concentrations …
We report the growth of highly c-axis oriented topological insulator (TI) BiSbTe1.5Se1.5 (BSTS) thin films by pulsed laser deposition (PLD) technique. The various growth parameters such as substrate temperature, Argon pressure in the deposition chamber and target to substrate distance are tuned to obtain the optimized conditions essential for stoichiometric and bulk insulating TI thin films. These films are highly c-axis oriented and exhibit all the four Raman modes characteristic to the R-3m space group. The quality of the deposited thin films is investigated using X-ray diffraction for cryst…
The preparation in thin film form of the known icosahedral phase in Ti-Ni-Zr bulk alloys has been investigated as a function of substrate temperature. Films were deposited by Pulsed Laser Deposition on sapphire substrates at temperatures ranging from room temperature to 350$^\circ$C. Morphological and structural modifications have been followed by grazing incidence and $θ$-2$θ$ X-ray diffraction, transmission electron diffraction and imaging. Chemical composition has been analysed by Electron Probe Micro-Analysis. The in-depth variation of composition has been studied by Secondary Neutral Mass…
The influence of technological parameters of pulsed-DC chemical vapour deposition on the deposition rate, the mechanical properties and the residual stress of diamond-like carbon (DLC) coatings deposited onto a martensitic steel substrate, using a Ti buffer layer between coating and substrate, has been studied. For this purpose, a Plackett-Burman experiment design and Pareto charts were used to identify the most significant process parameters, such as deposition time, methane flux, chamber pressure, power, pulse frequency, substrate roughness and thickness of titanium thin film. The substrate …
Wires of sp-hybridized carbon atoms are attracting interest for both fundamental aspects of carbon science and for their appealing functional properties. The synthesis by physical vapor deposition has been reported to provide sp-rich carbon films but still needs to be further developed and understood in detail. Here the synthesis of carbon-atom wires (CAWs) has been achieved by nanosecond pulsed laser deposition (PLD) expoliting the strong out-of-equilibrium conditions occurring when the ablation plasma is confined in a background gas. Surface Enhnaced Raman scattering (SERS) spectra of deposi…
Superconducting thin films have been prepared in a two-step in-situ process, using the Mg-B plasma generated by pulsed laser ablation. The target was composed of a mixture of Mg and MgB2 powders to compensate for the volatility of Mg and therefore to ensure a high Mg content in the film. The films were deposited at temperatures ranging from room temperature to 300 degrees C followed by a low-pressure in-situ annealing procedure. Various substrates have been used and diverse ways to increase the Mg content into the film were applied. The films show a sharp transition in the resistance and have …
Epitaxial titanium diboride thin films have been deposited on sapphire substrates by Pulsed Laser Ablation technique. Structural properties of the films have been studied during the growth by Reflection High Energy Electron Diffraction (RHEED) and ex-situ by means of X-ray diffraction techniques; both kinds of measurements indicate a good crystallographic orientation of the TiB2 film both in plane and along the c axis. A flat surface has been observed by Atomic Force Microscopy imaging. Electrical resistivity at room temperature resulted to be five times higher than the value reported for sing…
We report on the magnetic properties of zinc ferrite thin film deposited on SrTiO$_3$ single crystal using pulsed laser deposition. X-ray diffraction result indicates the highly oriented single phase growth of the film along with the presence of the strain. In comparison to the bulk antiferromagnetic order, the as-deposited film has been found to exhibit ferrimagnetic ordering with a coercive field of 1140~Oe at 5~K. A broad maximum, at $\approx$105~K, observed in zero-field cooled magnetization curve indicates the wide grain size distribution for the as-deposited film. Reduction in magnetizat…
Room temperature ferromagnetism was observed in n-type Fe-doped In2O3 thin films deposited on c-cut sapphire substrates by pulsed laser deposition. Structure, magnetism, composition, and transport studies indicated that Fe occupied the In sites of the In2O3 lattice rather than formed any metallic Fe or other magnetic impurity phases. Magnetic moments of films were proved to be intrinsic and showed to have a strong dependence on the carrier densities which depended on the Fe concentration and its valance state as well as oxygen pressure.
Thin films from the lanthanum vanadate nanoparticles were successfully grown by pulsed laser deposition method on glass and silicon substrates for the first time. Morphology and thickness of the films depend on a type of substrate and a number of pulses. The films are of 27 to 220 nm thickness and formed by very small particles up to 20 nm and also can contain single nanoparticles with dimensions 40 to 60 nm and sometimes agglomerates of nanoparticles. Spectral properties of the samples have been investigated and discussed. The vanadate films deposited on the silicon substrates lead to appeara…
Control of thin film stoichiometry is of primary relevance to achieve desired functionality. Pulsed laser deposition ablating from binary-oxide targets (sequential deposition) can be applied to precisely control the film composition, offsetting the importance of growth conditions on the film stoichiometry. In this work, we demonstrate that the cation stoichiometry of SrTiO$_3$ thin films can be finely tuned by sequential deposition from SrO and TiO$_2$ targets. Homoepitaxial SrTiO$_3$ films were deposited at different substrate temperatures and Ti/Sr pulse ratios, allowing the establishment of…
Substrate temperature dependent dielectric and ferroelectric properties of (100) oriented lead-free Na$_{0.4}$K$_{0.1}$Bi$_{0.5}$TiO$_3$ thin films grown by pulsed laser deposition
Effect of Pt bottom electrode texture selection on the tetragonality and physical properties of Ba0.8Sr0.2TiO3 thin films produced by pulsed laser deposition
We report herein fabrication and characterization of a thin-film transistor (TFT) using single-crystalline, epitaxial SrTiO3 film, which was grown by a pulsed laser deposition technique followed by the thermal annealing treatment in an oxygen atmosphere. Although TFTs on the polycrystalline epitaxial SrTiO3 films (as-deposited) exhibited poor transistor characteristics, the annealed single-crystalline SrTiO3 TFT exhibits transistor characteristics comparable with those of bulk single-crystal SrTiO3 FET: an on/off current ratio >10^5, sub-threshold swing ~2.1 V/decade, and field-effect mobility…
