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arXiv 2005.07626cond-mat.mes-hallcond-mat.mtrl-sci
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用于降低自旋轨道转矩转换电流的氦离子显微术

Helium Ion Microscopy for Reduced Spin Orbit Torque Switching Currents

Peter Dunne, Ciaran Fowley, Gregor Hlawacek, Jinu Kurian, Gwenaël Atcheson, Silviu Colis, Niclas Teichert, Bohdan Kundys, M. Venkatesan, Jürgen Lindner, Alina M… 展开作者

Peter Dunne, Ciaran Fowley, Gregor Hlawacek, Jinu Kurian, Gwenaël Atcheson, Silviu Colis, Niclas Teichert, Bohdan Kundys, M. Venkatesan, Jürgen Lindner, Alina Maria Deac, Thomas M. Hermans, J. M. D. Coey, Bernard Doudin

摘要:

自旋轨道转矩驱动开关是一种有利的方式来操纵纳米磁性物体的存储器和无线通信设备。从一种磁状态切换到另一种磁状态所需的临界电流取决于所用材料的几何形状和固有特性,这些特性很难局部控制。在这里,我们展示了如何聚焦氦离子束照射可以调制局部磁各向异性的Co薄膜在微观尺度上。使用异常霍尔效应的实时原位表征显示了辐射下的磁各向异性的数量级减少,并使用此,多电平开关被证明。其结果是,自旋开关电流密度,低至800 kA cm $^{-2}$,可以实现在膜的预定区域,而不需要光刻。空间上改变临界电流的能力不仅对存储元件有影响,而且对神经形态和概率计算也有影响。

英文摘要:

Spin orbit torque driven switching is a favourable way to manipulate nanoscale magnetic objects for both memory and wireless communication devices. The critical current required to switch from one magnetic state to another depends on the geometry and the intrinsic properties of the materials used, which are difficult to control locally. Here we demonstrate how focused helium ion beam irradiation can modulate the local magnetic anisotropy of a Co thin film at the microscopic scale. Real-time in-situ characterisation using the anomalous Hall effect showed up to an order of magnitude reduction of the magnetic anisotropy under irradiation, and using this, multi-level switching is demonstrated. The result is that spin-switching current densities, down to 800 kA cm$^{-2}$, can be achieved on predetermined areas of the film, without the need for lithography. The ability to vary critical currents spatially has implications not only for storage elements, but also neuromorphic and probabilistic computing.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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