A machine-learning method for extracting the short-range part of the probe-surface interaction from force spectroscopy curves is presented. Our machine-learning algorithm consists of two stages: the first stage determines a boundary that separates the region where the short-range interaction is dominantly acting on the probe, and a second stage that finds the parameters to fit the interaction over the long-range region. We successfully applied this method to force spectroscopy maps acquired over the Si(111)-(7x7) surface and found, as a result, a faint structure on the short-range interaction for one of the probes used in the experiments that would have probably been obviated using human-supervised fitting strategies.
Epitaxial graphene grown on transition metal surfaces typically exhibits a moiré pattern due to the lattice mismatch between graphene and the underlying metal surface. We use both scanning tunneling microscopy (STM) and atomic force microscopy (AFM) experiments to probe the electronic and topographic contrast of the graphene moiré on the Ir(111) surface. While STM topography is influenced by the local density of states close to the Fermi energy and the local tunneling barrier height, AFM is capable of yielding the 'true' surface topography once the background force arising from the van der Waa…
Although semiconductor to metal phase transformation of MoTe$_{2}$ by high-density laser irradiation of more than 0.3 MW/cm$^{2}$ has been reported, we reveal that the laser-induced-metal (LIM) phase is not the 1T' structure derived by a polymorphic-structural phase transition but consists instead of semi-metallic Te induced by photo-thermal decomposition of MoTe$_{2}$. The technique is used to fabricate a field effect transistor with a Pd/2H-MoTe$_{2}$/LIM structure having an asymmetric metallic contact, and its contact properties are studied via scanning gate microscopy. We confirm that a Sc…
The interlayer bonding in two dimensional materials is particularly important because it is not only related to their physical and chemical stability but also affects their mechanical, thermal, electronic, optical, and other properties. To address this issue, we report the direct characterization of the interlayer bonding in 2D SnSe using contact-resonance atomic force microscopy in this study. Site specific CR spectroscopy and CR force spectroscopy measurements are performed on both SnSe and its supporting SiO2 substrate comparatively. Based on the cantilever and contact mechanic models, the …
Electromechanical response of solids underpins image formation mechanism of several scanning probe microscopy techniques including the piezoresponse force microscopy (PFM) and electrochemical strain microscopy (ESM). While the theory of linear piezoelectric and ionic responses are well developed, the contributions of quadratic effects including electrostriction and capacitive tip-surface forces to measured signal remain poorly understood. Here we analyze the electrostrictive and capacitive contributions to the PFM and ESM signals and discuss the implications of the dielectric tip-surface gap o…
We perform scanning-gate microscopy on a quantum-point contact. It is defined in a high-mobility two-dimensional electron gas of an AlGaAs/GaAs heterostructure, giving rise to a weak disorder potential. The lever arm of the scanning tip is significantly smaller than that of the split gates defining the conducting channel of the quantum-point contact. We are able to observe that the conducting channel is shifted in real space when asymmetric gate voltages are applied. The observed shifts are consistent with transport data and numerical estimations.
A model for the extraction of the charge density dependent mobility and variable contact resistance in thin film transistors is proposed by performing a full derivation of the current-voltage characteristics both in the linear and saturation regime of operation. The calculated values are validated against the ones obtained from direct experimental methods. This approach allows unambiguous determination of both contact and channel resistance from the analysis of the current voltage characteristics of a single device, with no a-priori assumption on the two parameters. It solves the inconsistenci…
We report on the observation of anisotropic magnetoresistance (AMR) in vertical asymmetric nano-contacts (NCs) made through AlO$_x$ nano-oxide layer (NOL) formed by ion-assisted oxidation method in the film stack of Co/AlO$_x$-NOL/Pt. Analysis of NC formation was based on \emph{in situ} conductive atomic force microscopy and transmission electron microscopy. Depending on the purity of NCs from Al contamination, we observed up to 29% AMR ratio at room temperature.
The conductance change due to a local perturbation in a phase-coherent nanostructure is calculated. The general expressions to first and second order in the perturbation are applied to the scanning gate microscopy of a two-dimensional electron gas containing a quantum point contact. The first-order correction depends on two scattering states with electrons incoming from opposite leads and is suppressed on a conductance plateau; it is significant in the step regions. On the plateaus, the dominant second-order term likewise depends on scattering states incoming from both sides. It is always nega…
Ultrasound Atomic Force Microscopy (US-AFM) has been used for subsurface imaging of nanostructures. The contact stiffness variations have been suggested as the origin of the image contrast. Therefore, to analyze the image contrast, the local changes in the contact stiffness due to the presence of subsurface features should be calculated. So far, only static simulations have been conducted to analyze the local changes in the contact stiffness and, consequently, the contrast in US-AFM. Such a static approach does not fully represent the real US-AFM experiment, where an ultrasound wave is launche…
Anisotropic magneto resistances and intrinsic adiabatic transport features are generated on quantum Hall samples based on an (Al,Ga)As/GaAs heterostructure with alloyed Au/Ge/Ni contacts. We succeed to probe the microscopic origin of these transport features with a cryogenic scanning force microscope (SFM) by measuring the local potential distribution within the two-dimensional electron system (2DES). These local measurements reveal the presence of an incompressible strip in front of contacts with insulating properties depending on the orientation of the contact/2DES interface line relatively …
We report on transient adhesion and conductance phenomena associated with tip wetting in mechanical contacts produced by the indentation of a clean W(111) tip into a Au(111) surface. A combination of atomic force microscopy and scanning tunneling microscopy was used to carry out indentation and to image residual impressions in ultra-high vacuum. The ~7 nm radii tips used in these experiments were prepared and characterized by field ion microscopy in the same instrument. The very first indentations of the tungsten tips show larger conductance and pull-off adhesive forces than subsequent indenta…
Due to Fermi level pinning (FLP), metal-semiconductor contact interfaces result in a Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to efficiently inject both electrons and holes using the same metal - an essential requirement for several applications, including light-emitting devices and complementary logic. Interestingly, modulating the SBH in the Schottky-Mott limit of de-pinned van der Waals (vdW) contacts becomes possible. However, accurate extraction of the SBH is essential to exploit such contacts to their full potential. In this work, we pr…
We demonstrated visualization of Au nanoparticles buried 300 nm into a polymer matrix by measurement of the thermal noise spectrum of a microcantilever with a tip in contact to the polymer surface. The subsurface Au nanoparticles were detected as the variation in the contact stiffness and damping reflecting the viscoelastic properties of the polymer surface. The variation in the contact stiffness well agreed with the effective stiffness of a simple one-dimensional model, which is consistent with the fact that the maximum depth range of the technique is far beyond the extent of the contact stre…
We study scanning gate microscopy (SGM) conductance mapping of a $\mathrm{MoS}_2$ zigzag ribbon exploiting tight-binding and continuum models. We show that, even though the edge modes of a pristine nanoribbon are robust to backscattering on the potential induced by the tip, the conductance mapping reveals presence of both the edge modes and the quantized spin- and valley-current carrying modes. By inspecting the electron flow from a split gate quantum point contact (QPC) we find that the mapped current flow allows to determine the nature of the quantization in the QPC as spin-orbit coupling st…
We have performed scanning gate microscopy (SGM) on graphene field effect transistors (GFET), using a biased metallic nanowire coated with a dielectric layer as a contact mode tip and local top gate. Electrical transport through graphene at various back gate voltages is monitored as a function of tip voltage and tip position. Near the Dirac point, the dependence of graphene resistance on tip voltage shows a significant variation with tip position. SGM imaging reveals mesoscopic domains of electron-doped and hole-doped regions. Our measurements indicate a substantial spatial fluctuation (on the…
Straightforward contact resistance extraction methods based on electrical device characteristics are described and applied here to graphene field-effect transistors from different technologies. The methods are an educated adaptation of extraction procedures originally developed for conventional transistors by exploiting the drift-diffusion-like transport in graphene devices under certain bias conditions. In contrast to other available approaches for contact resistance extraction of graphene transistors, the practical methods used here do not require either the fabrication of dedicated test str…
We use electrostatic force microscopy and scanned gate microscopy to probe the conducting properties of carbon nanotubes at room temperature. Multi-walled carbon nanotubes are shown to be diffusive conductors, while metallic single-walled carbon nanotubes are ballistic conductors over micron lengths. Semiconducting single-walled carbon nanotubes are shown to have a series of large barriers to conduction along their length. These measurements are also used to probe the contact resistance and locate breaks in carbon nanotube circuits.
Extraction of charge carriers from a hot carrier solar cell using energy selective contacts, and the impact on limiting power conversion efficiency is analyzed. It is shown that assuming isentropic conversion of carrier heat into voltage implies zero power output at all operating points. Under conditions of power output, lower voltages than in the isentropic case are obtained due to the irreversible entropy increase associated with carrier flow. This lowers the limiting power conversion efficiency of a hot carrier solar cell.
We study the conductance $g$ of an electron interferometer created in a two dimensional electron gas between a nanostructured contact and the depletion region induced by the charged tip of a scanning gate microscope. Using non-interacting models, we study the beating pattern of interference fringes exhibited by the images giving $g$ as a function of the tip position when a parallel magnetic field is applied. The analytical solution of a simplified model allows us to distinguish between two cases: (i) If the field is applied everywhere, the beating of Fabry-Pérot oscillations of opposite spins …
We investigate the fabrication of electrical contacts using ion- and electron-beam induced deposition of platinum at the sub-μm scale. Halos associated with the metal surface decoration are characterized electrically in the 0.05-2 μm range using transport measurements, conducting atomic force microscopy and Kelvin probe microscopy. In contrast with IBID, EBID electrodes exhibit weakly conductive halos at the sub-μm scale, and can thus be used to achieve resist-free electrical contacts for transport measurements at the sub-μm scale. Four-point transport measurements using μm-spaced EBID contact…
Quantum point contacts exhibit mysterious conductance anomalies in addition to well known conductance plateaus at multiples of 2e^2/h. These 0.7 and zero-bias anomalies have been intensively studied, but their microscopic origin in terms of many-body effects is still highly debated. Here we use the charged tip of a scanning gate microscope to tune in situ the electrostatic potential of the point contact. While sweeping the tip distance, we observe repetitive splittings of the zero-bias anomaly, correlated with simultaneous appearances of the 0.7 anomaly. We interpret this behaviour in terms of…
We demonstrate the emergence of classical features in electronic quantum transport for the scanning gate microscopy response in a cavity defined by a quantum point contact and a micron-sized circular reflector. The branches in electronic flow characteristic of a quantum point contact opening on a two-dimensional electron gas with weak disorder are folded by the reflector, yielding a complex spatial pattern. Considering the deflection of classical trajectories by the scanning gate tip allows to establish simple relationships of the scanning pattern, which are in agreement with recent experiment…
We show scanning probe microscopy measurements of metallic nanocontacts between controlled electromigration cycles. The nanowires used for the thinning process are fabricated by shadow evaporation. The highest resolution obtained using scanning force microscopy is about 3 nm. During the first few electromigration cycles the overall slit structure of the nanocontact is formed. The slit first passes along grain boundaries and then at a later stage vertically splits grains in the course of consuming them. We find that first the whole wire is heated and later during the thinning process as the sli…
It was shown recently that the Force Feedback Microscope can avoid the jump-to-contact in Atomic force Microscopy even when the cantilevers used are very soft, thus increasing force resolution. In this letter, we explore theoretical aspects of the associated real time control of the tip position. We take into account lever parameters such as the lever characteristics in its environment, spring constant, mass, dissipation coefficient and the operating conditions such as controller gains, and interaction force. We show how the controller parameters are determined so that the FFM functions at its…
Non-contact scanning probe microscopy (SPM) has developed into a powerful technique to image many different properties of samples. The conventional method involves monitoring the amplitude, phase or frequency of a cantilever oscillating at or near its resonant frequency as it is scanned across the surface of a sample. For high Q factor cantilevers, monitoring the resonant frequency is the preferred method in order to obtain reasonable scan times. This can be done by using a phase-locked-loop (PLL). PLLs can be obtained as commercial integrated circuits, but these do not have the frequency reso…
We study the conductance of an electron interferometer formed in a two dimensional electron gas between a nanostructured quantum contact and the charged tip of a scanning gate microscope. Measuring the conductance as a function of the tip position, thermally induced rings may be observed in addition to Fabry-Pérot interference fringes spaced by half the Fermi wavelength. If the contact is made of a quantum dot opened in the middle of a Kondo valley, we show how the location of the rings allows to measure by electron interferometry the magnetic moment of the dot above the Kondo temperature.
Local variations in the Seebeck coefficient in low-dimensional materials-based nanostructures and devices play a major role in their thermoelectric performance. Unfortunately, currently most thermoelectric measurements probe the aggregate characteristics of the device as a whole, failing to observe the effects of the local variations and internal structure. Such variations can be caused by local defects, geometry, electrical contacts or interfaces and often substantially influence thermoelectric properties, most profoundly in two-dimensional (2D) materials. Here, we use Scanning Thermal Gate M…
The intrinsic mobility degradation coefficient, contact resistance and the transconductance parameter of graphene field-effect transistors (GFETs) are extracted for different technologies by considering a novel transport model embracing mobility degradation effects within the charge channel control description. By considering the mobility degradation-based model, a straightforward extraction methodology, not provided before, is enabled by applying the concept of the well-known Y-function to the \textit{I-V} device characteristics. The method works regardless the gate device architecture. An ac…
In this work, we have validated the application of Hertzian contact mechanics models and corrections for the analysis of force vs indentation curves, acquired using spherical indenters on linearly elastic samples, by means of finite elements simulations and AFM nanomechanical measurements of polyacrylamide gels possessing a thickness gradient. We have systematically investigated the impact of both large indentations and vertical spatial confinement (bottom effect) on the accuracy of the nanomechanical analysis performed with the Hertz model for the parabolic indenter compared to the Sneddon mo…
Noncontact atomic force microscopy (NC-AFM) and Kelvin probe force microscopy (KPFM) have become important tools for nanotechnology; however, their contrast mechanisms on the atomic scale are not entirely understood. Here we used chlorine vacancies in NaCl bilayers on Cu(111) as a model system to investigate atomic contrast as a function of applied voltage, tip height, and tip functionalization. We demonstrate that the AFM contrast on the atomic scale decisively depends on both the tip termination and the sample voltage. On the contrary, the local contact potential difference (LCPD) acquired w…
In the current paper a set of experiments dedicated to investigations of local electronic transport in undoped InAs nanowires at helium temperatures in the presence of a charged atomic-force microscope tip is presented. Both nanowires without defects and with internal tunneling barriers were studied. The measurements were performed at various carrier concentrations in the systems and opacity of contact-to-wire interfaces. The regime of Coulomb blockade is investigated in detail including negative differential conductivity of the whole system. The situation with open contacts with one tunneling…
We introduce a new scanning probe technique derived from scanning gate microscopy (SGM) in order to investigate thermoelectric transport in two-dimensional semiconductor devices. The thermoelectric scanning gate Microscopy (TSGM) consists in measuring the thermoelectric voltage induced by a temperature difference across a device, while scanning a polarized tip that locally changes the potential landscape. We apply this technique to perform interferometry of the thermoelectric transport in a quantum point contact (QPC). We observe an interference pattern both in SGM and TSGM images, and evidenc…
In this work, a mesoscopic model based on the non-equilibrium Green's function formalism for a tight-binding-like effective Hamiltonian is used to investigate a selectively contacted quantum dot array designed for operation as a single junction quantum dot solar cell. By establishing a direct relation between nanostructure configuration and optoelectronic properties, the investigation reveals the influence of inter-dot and dot-contact coupling strengths on the rates of charge carrier photogeneration, radiative recombination, and extraction at contacts, and consequently on the ultimate performa…
We investigated insulating Cu$_2$N islands grown on Cu(100) by means of combined scanning tunneling microscopy and atomic force microscopy with two vastly different tips: a bare metal tip and a CO-terminated tip. We use scanning tunneling microscopy data as proposed by Choi et al. [T. Choi et al., PRB 78, 035430 (2008).] to unambiguously identify atomic positions. Atomic force microscopy images taken with the two different tips show an inverted contrast over Cu$_2$N. The observed force contrast can be explained with an electrostatic model, where the two tips have dipole moments of opposite dir…
We demonstrate quantitative force imaging of long-range magnetic forces simultaneously with near-surface van-der-Waals and contact-mechanics forces using intermodulation atomic force microscopy. Magnetic forces at the 200 pN level are separated from near-surface forces at the 30 nN level. Imaging of these forces is performed in both the contact and non-contact regimes of near-surface interactions.
Scanning thermal microscopy (SThM) - a type of scanning probe microscopy that allows mapping thermal transport and temperatures in nanoscale devices, is becoming a key approach that may help to resolve heat dissipation problems in modern processors and develop new thermoelectric materials. Unfortunately, performance of current SThM implementations in measurement of high thermal conductivity materials continues to me limited. The reason for these limitations is two-fold - first, SThM measurements of high thermal conductivity materials need adequate high thermal conductivity of the probe apex, a…
We report a Kelvin probe force microscopy (KPFM) implementation using the dissipation signal of a frequency modulation atomic force microscopy that is capable of detecting the gradient of electrostatic force rather than electrostatic force. It features a simple implementation and faster scanning as it requires no low frequency modulation. We show that applying a coherent ac voltage with two times the cantilever oscillation frequency induces the dissipation signal proportional to the electrostatic force gradient which depends on the effective dc bias voltage including the contact potential diff…
We propose a two-frequency driving scheme in dynamic atomic force microscopy that maximizes the interaction time between tip and sample. Using a stochastic description of the cantilever dynamics, we predict large classical squeezing and a small amount of skewness of the tip's phase-space probability distribution. Strong position squeezing will require close contact between tip and surface, while momentum squeezing would also be possible in the van der Waals region of the tip-surface force. Employing a generalized Caldeira-Leggett model, we predict that surface-dependent dissipative forces may …
We demonstrate an alternative to Kelvin Probe Force Microscopy for imaging surface potential. The open-loop, single-pass technique applies a low-frequency AC voltage to the atomic force microscopy tip while driving the cantilever near its resonance frequency. Frequency mixing due to the nonlinear capacitance gives intermodulation products of the two drive frequencies near the cantilever resonance, where they are measured with high signal to noise ratio. Analysis of this intermodulation response allows for quantitative reconstruction of the contact potential difference. We derive the theory of …
Atomic Force Microscopy (AFM) conventional static force curves and Force Feedback Microscopy (FFM) force curves acquired with the same cantilever at the solid/air and solid/liquid interfaces are here compared. The capability of the FFM to avoid the jump to contact leads to the complete and direct measurement of the interaction force curve, including the attractive short-range van der Waals and chemical contributions. Attractive force gradients five times higher than the lever stiffness do not affect the stability of the FFM static feedback loop. The feedback loop keeps the total force acting o…
Atomic Force Microscopy (AFM) methods utilizing resonant mechanical vibrations of cantilevers in contact with a sample surface have shown sensitivities as high as few picometers for detecting surface displacements. Such a high sensitivity is harnessed in several AFM imaging modes. Here, we demonstrate a cantilever-resonance-based method to quantify electrostatic forces on a probe arising in the presence of a surface potential or when a bias voltage is applied to the AFM probe. We find that the electrostatic forces acting on the probe tip apex can strongly dominate cantilever response in electr…
Small oscillation amplitudes in dynamic atomic force microscopy can lead to invasive and high resolution imaging. Here we discuss small oscillation amplitude imaging in the context of ambient conditions and simultaneously excite the second flexural mode to access contrast channels sensitive to variations in sample's properties. Two physically distinct regimes of operation are discussed, one where the tip oscillates above the hydration layer and another where the tip oscillates in perpetual contact with it. It is shown that the user can control the region to be probed via standard operational p…
Magnetic force microscopy (MFM) allows detection of stray magnetic fields around magnetic materials and the two-dimensional visualization of these fields. This paper presents a theoretical analysis of the oscillations of an MFM tip above a thin film of nonmagnetic metal. The results show good agreement with experimental data obtained by varying the tip height. The phenomenon analyzed here can be applied as a "metal detector" at the nanometer scale and for contactless measurement of sheet resistivity. The detection sensitivity is obtained as a function of oscillation frequency, thus allowing de…
The accuracy of contact resistance values of two-dimensional field-effect transistors extracted with the \textit{Y}-function considering the impact of the intrinsic mobility degradation is evaluated here. The difference between methodologies that take this factor into account and ignore it is pointed out by a detailed analysis of the approximations of the transport model used for each extraction. In contrast to the oftenly used approach where the intrinsic mobility degradation is neglected, a \textit{Y}-function-based method considering a more complete transport model yields contact resistance…
