arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 2009.04205cond-mat.mtrl-scicond-mat.mes-hall
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接触共振原子力显微镜对少层SnSe层间耦合强度的局域探测

Local probe of the interlayer coupling strength of few-layers SnSe by contact-resonance atomic force microscopy

Zhiyue Zheng, Yuhao Pan, Tengfei Pei, Rui Xu, Kunqi Xu, Le Lei, Sabir Hussain, Xiaojun Liu, Lihong Bao, Hong-Jun Gao, Wei Ji, Zhihai Cheng

摘要:

二维材料中的层间键合尤为重要,因为它不仅关系到材料的物理和化学稳定性,而且影响材料的机械、热、电、光学等性能。为了解决这个问题,我们报告的直接表征层间键合在二维SnSe使用接触共振原子力显微镜在这项研究中。对SnSe及其支撑SiO_2衬底进行了位置特异性CR谱和CR力谱测量。基于悬臂梁和接触力学模型,接触刚度和垂直杨氏模量进行了评估,与二氧化硅作为参考材料进行比较。结合半解析模型和密度泛函理论计算,进一步分析了SnSe的层间成键。使用CR AFM的这种非破坏性方法直接表征层间相互作用将有助于更好地理解2D层状材料的物理和化学性质,特别是层间插层和垂直异质结构。

英文摘要:

The interlayer bonding in two dimensional materials is particularly important because it is not only related to their physical and chemical stability but also affects their mechanical, thermal, electronic, optical, and other properties. To address this issue, we report the direct characterization of the interlayer bonding in 2D SnSe using contact-resonance atomic force microscopy in this study. Site specific CR spectroscopy and CR force spectroscopy measurements are performed on both SnSe and its supporting SiO2 substrate comparatively. Based on the cantilever and contact mechanic models, the contact stiffness and vertical Young's modulus are evaluated in comparison with SiO2 as a reference material. The interlayer bonding of SnSe is further analyzed in combination with the semi-analytical model and density functional theory calculations. The direct characterization of interlayer interactions using this nondestructive methodology of CR AFM would facilitate a better understanding of the physical and chemical properties of 2D layered materials, specifically for interlayer intercalation and vertical heterostructures.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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