We perform a kinetic Monte Carlo simulation study of a model of thin film deposition of a two-component mixture in which the activation energy for diffusion of an adatom is additive over its nearest neighbors and in which the interactions between adatoms of the same species are stronger than those between adatoms of different species. The film morphology is investigated for broad ranges of values of the ratios between terrace diffusivity and atomic flux, of the probabilities of detachment from lateral neighbors, and of probabilities of crossing terrace edges. First, we consider a symmetric case in which the interactions of adatoms of the same species are the same for the two components. For low and intermediate temperatures, we show the formation of narrow domains, whose widths are $3$-$30$ lattice constants, which meander in the layers parallel to the substrate, and are connected through very long distances. The domain width depends on the diffusivity-flux ratio of the same species, but it is weakly affected by interactions of different species, so rough estimates of that width can be obtained by using tabulated properties of films with a single component. At high temperatures, the separation of domains is enhanced, but their long distance connectivity is lost, which shows that the formation of the long meandering domains is restricted to a certain range of temperature and flux. Similar morphological features are obtained when the intra-species interactions are different and the adatom diffusion coefficients on terraces of the same species differ up to two orders of magnitude. An approximate scaling relation for the domain width is obtained, but the species with the largest mobility constrains the temperature range in which the long connected domains are found.
This Letter reports an anomaly of film porosity dependence on deposition rate during physical vapor deposition - the porosity increases as deposition rate decreases. Using glancing angle deposition of Cu on SiO2 substrate, the authors show that the Cu film consists of well separated nanorods when the deposition rate is 1 nm/second, and that the Cu films consists of a more uniform (or lower porosity) film when the deposition rate is 6 nm/second; all other deposition conditions remain the same. This anomaly is the result of interplay among substrate non-wetting, density of Cu nuclei on the subst…
We report the structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition technique. To understand the effects of film thickness, lattice mismatch and grain size on transport properties, various oriented substrates were used for deposition, including single-crystalline SrLaAlO4 (001), SrTiO3 (100) and LaAlO3 (100). To achieve a high quality LaNiO3 thin films, the vital parameters (such as laser fluence, substrate temperature, oxygen pressure, and deposition time) were optimized. The best quality films are found to be well textured samples with good crystalline …
Cu2Ta4O12 (CTaO) thin films were successfully deposited on Si(100) substrates by pulsed-laser deposition technique. The crystalline structure and the surface morphology of the CTaO thin films were strongly affected by substrate temperature, oxygen pressure and target - substrate distance. In general during deposition of CTaO the formation of a Ta2O5 phase appeared, on which CTaO grew with different orientations. We report on the experimental set-up, details for film deposition and the film properties determined by SEM, EDX and XRD.
We demonstrated that chemical vapor deposition of graphene on Cu films strongly enhances their thermal diffusivity and thermal conductivity. Deposition of graphene increases the thermal conductivity of 9 micrometer (25 micrometer) thick Cu films by up to 24% (16%) near room temperature. Interestingly, the observed improvement of thermal properties of graphene coated Cu films is primarily due to changes in Cu morphology during graphene deposition and associated with it temperature treatment rather than graphene's action as an additional heat conducting channel. Enhancement of thermal properties…
In the present study we report on properties of ZnCoO films grown at relatively low temperature by the Atomic Layer Deposition, using two reactive organic zinc precursors (dimethylzinc and diethylzinc). The use of these precursors allowed us the significant reduction of a growth temperature to below 300oC. The influence of growth conditions on the Co distribution in ZnCoO films, their structure and magnetic properties was investigated using Secondary Ion Mass Spectroscopy, Scanning Electron Microscopy, Cathodoluminescence, Energy Dispersive X-ray Spectrometry (EDX), X-ray diffraction and Super…
The micro-properties (structure and composition), and macro-properties (electrical and optical properties) of zinc oxide (ZnO) thin films deposited on glass substrates using a filtere vacuum arc deposition (FVAD) system were investigated as a function of oxygen pressure (0.37 - 0.5 Pa) and arc current (100 - 300 A). Correlations between the various properties were investigated.
We present results on growth of large area epitaxial ReS2 thin film both on c plane sapphire substrate and MoS2 template by pulsed laser deposition (PLD). Films tend to grow with (0001) ReS2 perpendicular to (0001) Al2O3 and (0001) ReS2 perpendicular to (0001) MoS2 parallel to (0001) Al2O3 at deposition temperature below 300 deg C. Films are polycrystalline grown at temperature above 300 deg C. The smoothness and quality of the films are significantly improved when grown on MoS2 template compared to sapphire substrate. The results show that PLD is suitable to grow ReS2 epitaxial thin film over…
We have studied the growth of Fe3O4 (111) epitaxial films on Al2O3 (001) substrates using a pulsed laser deposition / thermal reduction cycle using an α-Fe2O3 target. While direct deposition onto the Al2O3 (001) substrates results in an α-Fe2O3 epilayer, deposition on the Fe3O4 (111) surface results in a γ-Fe2O3 epilayer. The kinetics of the transitions between Fe2O3 and Fe3O4 were studied by measuring the time constants of the transitions. The transition from α-Fe2O3 to Fe3O4 via thermal reduction turns out to be very slow, due to the high activation energy. Despite the significant grain boun…
We have successfully grown one of the higher manganese silicides, Mn4Si7 thin films on silicon (100) substrates using an ultra-high vacuum deposition with a base pressure of 1x10-9 torr. The thickness of the film was varied from 65-100 nm. These films exhibit a tetragonal crystal structure and display paramagnetic behavior as predicted for the stoichiometric Mn4Si7 system. They have a resistivity of 3.321 x 10-5 ohm-m at room temperature and show a semi-metallic nature.
Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the deposited film and the control of the film morphology by varying the processing parameters of PP-MOCVD - choice of solvent, concentration, and presence of a shield. Aluminum sec-butoxide (ASB) was used as the aluminum source while hexane and toluene were used as the solvents. The films were deposited at 475oC at different precursor concentrations. It was obse…
Single-walled carbon nanotube (SWCNT) films are promising materials for transparent conductive films (TCFs) with potential applications in flexible displays, touch screens, solar cells and solid-state lighting1,2. However, further reductions in resistivity and in cost of SWCNT films are necessary for high quality TCF products3. Here, we report an improved floating catalyst chemical vapor deposition method to directly and continuously produce ultrathin and freestanding SWCNT films at the hundred meter-scale. Both carbon conversion efficiency and SWCNT TCF yield are increased by three orders of …
La2Zr2O7 (LZO) formation of bulk powders and of films by Chemical Solution Deposition (CSD) process have been studied using propionates. The treatment involved a one step cycle in the reducing forming gas (Ar-5%H2) to be compatible with Ni-5at%W RABITS. Large amount of residual carbon was found in LZO powders formed in these conditions (10 wt %). The volume fraction of the cube texture in LZO films on Ni-5at%w RABITS was found to be a function of the speed of the gas flown above sample. This phenomenon is discussed in considering the C deposited from the carbon-containing gases emitted during …
Thin aluminum oxide films were deposited by a new and simple physicochemical method called chemical liquid phase deposition (CLD) on semiconductor materials. Aluminum sulfate with crystallized water and sodium bicarbonate were used as precursors for film growth, and the control of the system pH value played an important role in this experiment. The growth rate is 12 nm/h at room temperature. Post-growth annealing not only densifies and purifies the films, but results in film crystallization as well. Excellent quality of Al2O3 films in this work is supported by electron dispersion spectroscopy,…
We report the epitaxial growth of BiFeO3 by pulsed electron deposition and the resulting crystal quality, magnetic and nanoscale switching properties. X-ray diffraction shows high quality single phase, epitaxial (001) oriented films grown on SrTiO3 (001) substrates. Both field and temperature dependent magnetic properties reveal an antiferromagnetic behavior of the films. For the film with a SrRuO3 bottom electrode, an exchange-enhancement effect between antiferromagnetic BiFeO3 and ferromagnetic SrRuO3 was observed at low temperature. The piezoelectric force microscopy and switching spectrosc…
Here we report on the structural, optical, electrical and magnetic properties of Co-doped and (Co,Mo)-codoped SnO2 thin films deposited on r-cut sapphire substrates by pulsed laser deposition. Substrate temperature during deposition was kept at 500 C. X-ray diffraction analysis showed that the undoped and doped films are crystalline with predominant orientation along the [101] direction regardless of the doping concentration and doping element. Optical studies revealed that the presence of Mo reverts the blue shift trend observed for the Co-doped films. For the Co and Mo doping concentrations …
We report the growth of highly c-axis oriented topological insulator (TI) BiSbTe1.5Se1.5 (BSTS) thin films by pulsed laser deposition (PLD) technique. The various growth parameters such as substrate temperature, Argon pressure in the deposition chamber and target to substrate distance are tuned to obtain the optimized conditions essential for stoichiometric and bulk insulating TI thin films. These films are highly c-axis oriented and exhibit all the four Raman modes characteristic to the R-3m space group. The quality of the deposited thin films is investigated using X-ray diffraction for cryst…
We report the epitaxial growth of Ca3SnO antiperovskite oxide films on (001)-oriented cubic yttria-stabilized zirconia (YSZ) substrates by using a conventional pulsed laser deposition (PLD) technique. In this work, a sintered Ca3SnO pellet is used as the ablation target. X-ray diffraction measurements demonstrate the (001) growth of Ca3SnO films with the antiperovskite structure and a cube-on-cube orientation relationship to the YSZ substrate. The successful synthesis of the antiperovskite phase is further confirmed by x-ray photoemission spectroscopy. These results strongly suggest that antip…
Uniform single layer graphene was grown on single-crystal Ir films a few nanometers thick which were prepared by pulsed laser deposition on sapphire wafers. These graphene layers have a single crystallographic orientation and a very low density of defects, as shown by diffraction, scanning tunnelling microscopy, and Raman spectroscopy. Their structural quality is as high as that of graphene produced on Ir bulk single crystals, i.e. much higher than on metal thin films used so far.
Cerium dioxide (CeO2) thin films were deposited by atomic layer deposition (ALD) on both Si and TiN substrates. The ALD growth produces CeO2 cubic polycrystalline films on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN. In correspondence, we measure a relative concentration of Ce3+ equals to 22.0% in CeO2/Si and around 18% in CeO2/TiN, by X-ray photoelectron spectroscopy. Such values indicate the presence of oxygen vacancies in the films. Our results extend the knowledge on the structural and chemical…
Thin p-type Sb-doped ZnO films were grown by filtered vacuum arc deposition (FVAD), on untreated glass samples. The arc cathode was prepared by dissolving Sb into molten Zn. The deposition was performed with 200 A arc current, running for 120-240 s in 0.426 Pa oxygen pressure. The film thickness was 330-500 nm. The aotmic concentration of Sb in the films was ~1.5%, whereas the O/Zn atomic concentration ratio was ~0.7. Sb incorporation into the polycrystalline ZnO matrix was concluded from XRD analysis. The film resistivity (0.15-0.3 Ohm*m), carrier density (~10^22 m^(-3)), and carrier type, we…
High-quality thin films of the ferromagnetic-insulator europium(II) sulfide (EuS) were fabricated by pulsed laser deposition on Al2O3 (0001) and Si (100) substrates. A single orientation was obtained with the [100] planes parallel to the substrates, with atomic-scale smoothness indicates a near-ideal surface topography. The films exhibit uniform ferromagnetism below 15.9 K, with a substantial component of the magnetization perpendicular to the plane of the films. Optimization of the growth condition also yielded truly insulating films with immeasurably large resistance. This combination of mag…
We deposit intrinsic hydrogenated amorphous silicon (a-Si:H) thin films by reactive pulsed laser deposition, for various hydrogen pressures in the 0-20 Pa range, at a low deposition temperature of 120C, and investigate the hydrogen incorporation, structural, optical, and electrical properties of the films, as a function of the ambient hydrogen pressure. The film thickness decreases linearly as the hydrogen pressure increases. The hydrogen content of the films is determined by infrared spectroscopy and the optical bandgap from UV-Vis-NIR transmittance and reflectance measurements. Electric meas…
We present a synthesis/processing method for fabricating ferrimagnetic insulator (Bi-doped yttrium iron garnet) thin films with tunable magnetic anisotropy. Since the desired magnetic properties rely on controllable thickness and successful doping, we pay attention to the entire synthesis/processing procedure (nanopowder synthesis, nanocrystalline target preparation and pulsed laser deposition (PLD)). Atomically flat films were deposited by PLD on (111)-orientated yttrium aluminum garnet. We show a significant enhancement of perpendicular anisotropy in the films, caused by strain-induced aniso…
The deposition of atomically thin highly uniform chemically derived graphene (CDG) films on 300 mm SiO2/Si wafers is reported. We demonstrate that the very thin films can be lifted off to form uniform membranes than can be free-standing or transferred onto any substrate. Detailed maps of thickness using Raman spectroscopy and atomic force microscopy (AFM) height profiles reveal that the film thickness is very uniform and highly controllable, ranging from 1-2 layers up to 30 layers. After reduction using a variety of methods, the CDG films are transparent and electrically active with FET device…
The electron field emission of patterned films of nitrogenated carbon nanotubes is shown to be decisively influenced by the deposition conditions. The growth was carried out by decomposing methane in a nitrogen/ammonia atmosphere using hot filament chemical vapor deposition (CVD). The diameter of the produced tubes depended critically on the distance between substrate and filament, and the field emission properties applied fields needed for electron emission, field amplification factor) could be directly correlated to the film morphology. This demonstrates the possibility of tuning the field e…
We deposited epitaxial thin films of Morphotropic Phase Boundary (MPB) Pb0.65Ba0.35Nb2O6 (PBN:65) on MgO substrates using pulsed laser deposition. Afterwards, a novel transmission optical experiment was developed to measure the electric field-induced bending angle of the thin film sample using a divergent incident light. From which the electric field-induced strain was obtained, and it was used to calculate the electrostrictive constant of the PBN thin film. The result is 0.000875 um2/V2, and it is consistent with what we measured in the reflection experiment.
Oblique angle deposition of oxides is being famous for fabricating inhomogeneous thin films with variation of refractive index along thickness in a functional form. Inhomogeneous layers play a key role in the development of rugate interference devices for photo-physical applications. Such obliquely deposited thin films show high porosity which is a critical issue related to their mechanical and environmental stability. Hence, it is important to investigate elastic properties of such film in addition to optical properties. Using atomic force acoustic microscopy, we report indentation modulus of…
Micron-thick boron films have been deposited by Pulsed Laser Deposition in vacuum on several substrates at room temperature. The use of high energy pulses (>700 mJ) results in the deposition of smooth coatings with low oxygen uptake even at base pressures of 10$^{-4}$ - 10$^{-3}$ Pa. A detailed structural analysis, by X-Ray Diffraction and Raman, allowed to assess the amorphous nature of the deposited films as well as to determine the base pressure that prevents boron oxide formation. In addition the crystallization dynamics has been characterized showing that film crystallinity already improv…
Diamond Like Carbon (DLC) films were deposited on quartz substrates using Dense Plasma Focus (DPF) method. The formation of ${\rm sp^3}$ bonds as is it's content in the film strongly depends on the substrate and it seems quartz is not a suitable substrate. However, we report here the formation of DLC films on quartz substrates that were maintained at elevated temperatures and show the content of carbon atoms with ${\rm sp^3}$ bonds in the film is directly proportional to the substrate's temperature. Not only does this give good control of film fabrication, but also shows how to take advantage …
In this paper we report the deposition of epitaxial thin films of Nd1-xSrxCoO3 with x=0, 0.2 and 0.5 on single crystalline substrates (SrTiO3 and LaAlO3) carried out by means of rf-magnetron sputtering. The deposited films are all completely oriented and epitaxial and characterized by a nanocrystalline morphology. As-deposited films have an average roughness around 1 nm while after the thermal treatment this increases up to 20 nm while preserving the nanocrystalline morphology. All the films deposited on SrTiO3 have shown to be under a certain degree of tensile strain while those on the LaAlO3…
The surface structure of SrTiO3(001) thin films homoepitaxially grown by PLD in step-flow mode was characterized using low temperature STM. It was found that one-dimensional (1D) TiOx-based nanostructures were formed on the thin film surface and their density increased with increasing thin film thickness. Most of the 1D nanostructures disappeared after a post-deposition annealing, indicating that this structure is metastable due to the nonequilibrium growth mode. The resulting surface after annealing exhibited similar features to that of a thinner film, having a domain structure with (2x1) and…
Structural and electronic properties of homogeneous poly(3-Hexylthiophene) (P3HT) films ob- tained from the electro-spray method were presented by means of grazing incidence x-ray diffrac- tion, atomic force microscopy, optical absorption, photoelectron spectroscopy and (photo)electrical conductivity. Different structural conformations were obtained starting from different solution con- centrations and flow rate conditions. The electro-spray method was shown to effectively expand the control of the conformation and assembling of the polymers films, opening the way to the possibility of tailori…
The deposition of nano-crystalline ZnS/diamond composite protective coatings on silicon, sapphire, and ZnS substrates, as a preliminary step to coating infrared transparent ZnS substrates from powder mixtures by the aerosol deposition method is presented. Advantages of the aerosol deposition method include the ability to form dense, nanocrystalline films up to hundreds of microns thick at room temperature and at a high deposition rate on a variety of substrates. Deposition is achieved by creating a pressure gradient that accelerates micrometer-scale particles in an aerosol to high velocity. Up…
A method for combinatorial sputter deposition of thin films on microparticles is presented. The method is developed for a laboratory-scale magnetron sputter system and uses a piezoelectric actuator to agitate the microparticles through oscillation. Custom-made components enable to agitate up to nine separate batches of particles simultaneously. Due to the agitation, the whole surface of the particles can be exposed to the sputter flux and thus can be completely covered with a thin film. By sputtering a CrMnFeCoNi high entropy alloy target, separate batches of polystyrene microspheres (500 um m…
Physical vapor deposition can be used to prepare highly stable organic glass systems where the molecules show orientational and translational ordering at the nanoscale. We have used low-dose four-dimensional scanning transmission electron microscopy (4D STEM), enabled by a fast direct electron detector, to map columnar order in glassy samples of a discotic mesogen using a 2 nm probe. Both vapor deposited and liquid cooled glassy films show domains of similar orientation, but their size varies from tens to hundreds of nanometers, depending on processing. Domain sizes are consistent with surface…
We discuss the origin of the temperature dependence of resistivity observed in highly oriented LaNiO_3 thin films (of thickness d) grown on SrTiO_3 substrate by a pulsed laser deposition technique. All the experimental data are found to collapse into a single universal curve [T/T_{sf}(d)]^{3/2} for the entire temperature interval (20K<T<300K) with T_{sf}(d) being the onset temperature for triggering a resonant scattering of conduction electrons by spin fluctuations in LaNiO_3/SrTiO_3 heterostructure.
Magnetization reversal mechanisms and depth-dependent magnetic profile have been investigated in Co/Pd thin films magnetron-sputtered under continuously varying pressure with opposite deposition orders. For samples grown under increasing pressure, magnetization reversal is dominated by domain nucleation, propagation and annihilation; an anisotropy gradient is effectively established, along with a pronounced depth-dependent magnetization profile. However, in films grown under decreasing pressure, disorders propagate vertically from the bottom high-pressure region into the top low-pressure regio…
Supported carbon nanosheets and carbon nanotubes served as sacrificial templates for preparing spacious TiO2 photocatalytic thin films. Amorphous TiO2 was deposited conformally on the carbonaceous template material by atomic layer deposition (ALD). Upon calcination at 550°C, the carbon template was oxidatively removed and the as-deposited continuous amorphous TiO2 layers transformed into interlinked anatase nanoparticles with an overall morphology commensurate to the original template structure. The effect of type of template, number of ALD cycles and gas residence time of pollutant on the pho…
One of many challenges for niobium (Nb) based superconducting devices is the improvement over the surface morphology and superconducting properties as well as the reduction of defects. We employed a novel deposition technique, i.e. biased target ion beam deposition technique (BTIBD) to prepare Nb thin films with controlled crystallinity and surface morphology. We found that the target current (ITarget) and the target bias (VTarget) were critical to the crystallinity and surface morphology of Nb films. The high target current (ITarget >500 mA and VTarget = 400 V bias) during the deposition degr…
We investigate the hetero-epitaxial growth of thin film deposited on a (001) substrate via molecular dynamics simulations, using six fcc transition metals as our modeling systems. By studying the radial distribution function in the film layers, we demonstrate the importance of the sign of lattice mismatch on the layer structure. For positive lattice mismatches, the film favors pseudomorphic growth, whereas for negative mismatches, a sharp transition happens within the first few monolayers of adatoms and the film layers are transformed into the close-packed (111) structure. We propose a way to …
A novel continuous-compositional spread technique based on the non-uniformity of the deposition rate typically observed in Pulsed Laser Deposition (PLD) is introduced. The approach uses the spatial variations in the deposition-rate naturally occurring in PLD; therefore, there is no need for the masks typically used in combinatorial techniques. Consequently, combinatorial materials synthesis can be carried out under optimized film growth conditions (e.g. at high temperature). Additionally, lifting the need for post-annealing renders this method applicable to heat-sensitive materials and substra…
We present a comparative study on the influence of applied magnetic field on the resistance of $C_{1-x}Co_x$ thin films (with $x=0.1$, $0.15$ and $0.2$) grown on $Si$ substrate by pulsed laser deposition technique. It is found that the behavior of magnetoresistance (MR) drastically depends on the temperature. Namely, at low temperatures MR is positive and its behavior is governed by the field mediated weak localization scenario. While at high temperatures MR turns negative and its behavior is dominated by electron scattering on ferromagnetic cobalt atoms.
The direct liquid injection chemical vapor deposition (DLI-CVD) technique has been used for the growth of cobalt ferrite (CFO) films on (100)-oriented MgAl$_2$O$_4$ (MAO) substrates. Smooth and highly epitaxial cobalt ferrite thin films, with the epitaxial relationship $\mathrm{MAO} (100)\:[001] \parallel \mathrm{CFO} (100)\:[001]$, are obtained under optimized deposition conditions. The films exhibit bulk-like structural and magnetic properties with an out-of-plane lattice constant of $8.370\;\mathrmÅ$ and a saturation magnetization of $420\;\mathrm{kA/m}$ at room temperature. The Raman spect…
Crystallization is a key for ferroelectricity which is a collective behavior of microscopic electric dipoles. On the other hand, uncontrolled crystallization leads to uneven morphology and random crystal orientations, which undermines the application potential of ferroelectric thin films. In this work, we introduce a film fabrication method of low-temperature physical vapor deposition followed by restrained crystallization, with electrical properties monitored in real-time by in situ measurements. This method was adopted to fabricate films of 2-methylbenzimidazole (MBI), whose molecule crystal…
The deposition of boron-doped amorphous carbon thin films on SiO2 substrate was achieved via a focused ion beam-assisted chemical vapor deposition of triphenyl borane (C18H15B) and triphenyl borate (C18H15BO3). The existence of boron in the deposited film from triphenyl borane, with a precursor temperature of 90 °C, was confirmed by a core level X-ray photoelectron spectroscopy analysis. The film exhibited a semiconducting behavior with a band gap of 285 meV. Although the band gap was decreased to 197 meV after an annealing process, the film was still semiconductor. Additionally, a drastic red…
In this paper we reported, to the best of our knowledge, the first deposition of highly oriented thin films (with thickness of about 90 nm) of NdCoO3 and Nd0.8Sr0.2CoO3 cobaltites on single-crystalline STO and LAO substrates. Our investigation has shown that highly oriented single phase thin films of NCO and NSCO can be successfully deposited by means of rf-sputtering if the substrates is heated at high temperatures (700C); lower substrate temperature has shown to lead to multi-phase materials with a low crystallinity degree . LAO substrate showed to give origin to a prefect match of the out-o…
Nanocomposite NiO:Au thin films, formed by gold nanoparticles embedded in a nickel oxide matrix, have been grown by reactive pulsed laser deposition (R-PLD). Two actively synchronized nanosecond laser sources, a KrF excimer laser (248 nm) and a Nd:YAG laser (355 nm), were used for the simultaneous ablation of nickel and gold targets in oxygen ambient. The morphology, composition, and optical properties of the obtained nanocomposites were investigated and were found to correlate with the concentration of Au nanoparticles. Further, the NiO:Au nanocomposites have been tested as hydrogen sensors. …
In this paper, oxidation of Cu during physical sputtering deposition in a high purity and low pressure Ar atmosphere without introducing O2 gas flow was studied systemically. It was found that various flexible Cu-based films could be obtained by simply adjusting deposition parameters. Electrical and optical testing results showed that the achieved pure Cu films and Cu+Cu2O composite films both presented an intriguing combination of metal and semiconductor characteristics. It is expected that such Cu-based films with a superior conductivity and a solar-window bandgap may have fascinating potent…
Vapor deposition on polycrystalline films can lead to staggering levels of compressive stress, exceeding even the yield strength of the films. Mysteriously, a significant part of this stress has a reversible nature: it disappears when the deposition is stopped and re-emerges upon resumption. Although numerous mechanisms have been proposed to explain these effects, the origin of the phenomenon remains still unclear. The incorporation of atoms in the grain boundaries is, to our opinion, the most likely mechanism, but the required driving force for it has not yet been addressed. Therefore, instea…
Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include YBa_2Cu_3O_7, La_{1.85}Sr_{0.15}CuO_{4+δ} and LaNiO_3. Above 100K - 150K the thin films have a temperature independent dielectric constant as do single crystals. The value of the dielectric constant is of the order of 1500 over a wide temperature region, potentially making it a good candidate for many applications. The frequency dependence of its dielectric properties …
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray diffraction and atomic force microscopy techniques as functions of growth temperature, oxygen pressure and the pulses count of the laser. The study shows that continuous epitaxial films of thickness as low as 3 nm with high crystalline quality, smooth surface and interface morphology can be grown by this technique. The study also reveals the co-existence of 60°-rotat…
Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 °C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN, as revealed by X-ray diffraction. Additionally, CeO2 films differ in interface roughness depending on the substrate. Furthermore, the relative concentration of Ce3+ is 22.0% in CeO2/Si and around 18% in CeO2/TiN, as obtained by X-ray photoelectron spectroscopy (…
Atomic-layer-deposited Al2O3 and HfO2 films on GaSb substrates were treated by in-situ ozone post deposition treatment (PDT). The effects of ozone PDT on the interfacial and electrical properties of Al2O3 and HfO2 gate dielectric films on GaSb substrates were investigated carefully. It is found that the dielectric quality and the interfacial properties of the Al2O3 and HfO2 films are improved by ozone PDT. After in-situ ozone PDT for 5 min, the Al2O3 and HfO2 films on GaSb substrates exhibit improved electrical and interfacial properties, such as reduced frequency dispersion, gate leakage curr…
Developing high fidelity quantitative models of solid state reaction systems can be challenging, especially in deposition systems where, in addition to the multiple competing processes occurring simultaneously, the solid interacts with its atmosphere. In this work, we develop a model for the growth of a thin solid film where species from the atmosphere adsorb, diffuse, and react with the film. The model is mesoscale and describes an entire film with thickness on the order of microns. Because it is stochastic, the model allows us to examine inhomogeneities and agglomerations that would be impos…
