薄膜孔隙率对沉积速率依赖性的反常现象
Anomaly of Film Porosity Dependence on Deposition Rate
摘要：
这封信报告了一个异常的薄膜孔隙率依赖于沉积速率在物理气相沉积-孔隙率增加，沉积速率降低。使用掠射角沉积的Cu在SiO2衬底上，作者表明，Cu膜由良好分离的纳米棒时，沉积速率为1 nm/秒，和Cu膜由一个更均匀（或更低的孔隙率）膜时，沉积速率为6 nm/秒;所有其他沉积条件保持不变。这种异常是基板非润湿性、基板上Cu核的密度和纳米棒的最小直径之间的相互作用的结果。
英文摘要：
This Letter reports an anomaly of film porosity dependence on deposition rate during physical vapor deposition - the porosity increases as deposition rate decreases. Using glancing angle deposition of Cu on SiO2 substrate, the authors show that the Cu film consists of well separated nanorods when the deposition rate is 1 nm/second, and that the Cu films consists of a more uniform (or lower porosity) film when the deposition rate is 6 nm/second; all other deposition conditions remain the same. This anomaly is the result of interplay among substrate non-wetting, density of Cu nuclei on the substrate, and the minimum diameter of nanorods.
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