Silicon spin qubits have achieved high-fidelity one- and two-qubit gates, above error correction thresholds, promising an industrial route to fault-tolerant quantum computation. A significant next step for the development of scalable multi-qubit processors is the operation of foundry-fabricated, extendable two-dimensional (2D) arrays. In gallium arsenide, 2D quantum-dot arrays recently allowed coherent spin operations and quantum simulations. In silicon, 2D arrays have been limited to transport measurements in the many-electron regime. Here, we operate a foundry-fabricated silicon 2x2 array in the few-electron regime, achieving single-electron occupation in each of the four gate-defined quantum dots, as well as reconfigurable single, double, and triple dots with tunable tunnel couplings. Pulsed-gate and gate-reflectometry techniques permit single-electron manipulation and single-shot charge readout, while the two-dimensionality allows the spatial exchange of electron pairs. The compact form factor of such arrays, whose foundry fabrication can be extended to larger 2xN arrays, along with the recent demonstration of coherent spin control and readout, paves the way for dense qubit arrays for quantum computation and simulation.
Electrical magnon spectroscopy with foundry-fabricated nanoscale magnetic tunnel junctions
Helmholtz-Zentrum Dresden–Rossendorf（亥姆霍兹德累斯顿-罗斯多夫中心）；Technische Universität Dresden（德累斯顿工业大学）；Centre de Nanosciences et de Nanotechnologies, CNRS, Université Paris-Saclay（巴黎萨克雷大学CNRS纳米科学与工程研究中心）；GlobalFoundries Dresden Module One LLC & Co. KG (GF)（格芯德累斯顿第一模块有限责任公司及合伙公司）
Photonic crystals use periodic structures to create forbidden frequency regions for optical wave propagation, that allow for the creation and integration of complex optical functions in small footprint devices. Such strategy has also been successfully applied to confine mechanical waves and to explore their interaction with light in the so-called optomechanical cavities. Because of their challenging design, these cavities are traditionally fabricated using dedicated high-resolution electron-beam lithography tools that are inherently slow, limiting this solution to small-scale applications or r…
Biomedical and environmental testing currently require access to highly specialized facilities or extensive training. Current biochemical tests require complex reagents to achieve a simple human readable result such as a color change. This results in low-information tests, with high reagent costs. To maximize information from testing while minimizing costs, biotechnology should leverage complex analysis enabled by advanced portable computing power and use simplified reagents. Nanotechnologists have created proof-of-concept devices to move diagnosis and monitoring from large core labs to hand-h…
Hole spins in semiconductor quantum dots represent a viable route for the implementation of electrically controlled qubits. In particular, the qubit implementation based on Si pMOSFETs offers great potentialities in terms of integration with the control electronics and long-term scalability. Moreover, the future down scaling of these devices will possibly improve the performance of both the classical (control) and quantum components of such monolithically integrated circuits. Here we use a multi-scale approach to simulate a hole-spin qubit in a down scaled Si-channel pMOSFET, whose structure i…
Si-MOS based QD qubits are attractive due to their similarity to the current semiconductor industry. We introduce a highly tunable MOS foundry compatible qubit design that couples an electrostatic quantum dot (QD) with an implanted donor. We show for the first time coherent two-axis control of a two-electron spin qubit that evolves under the QD-donor exchange interaction and the hyperfine interaction with the donor nucleus. The two interactions are tuned electrically with surface gate voltages to provide control of both qubit axes. Qubit decoherence is influenced by charge noise, which is of s…
We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself.
We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conventional industrial fabrication processes.
We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits.
Proposed configurations for the implementation of graphene-based CNOT and Toffoli gates working at room temperature are presented. These two logic gates, essential for any quantum computing algorithm, involve ballistic Y junctions for qubit implementation, quantum interference for qubit interaction and oblique gates for optimizing the output, and can be fabricated using existing nanolitographical techniques. The proposed configurations of CNOT and Toffoli quantum logic gates are based on the very large mean-free-paths of carriers in graphene at room temperature.
For semiconductor spin qubits, complementary-metal-oxide-semiconductor (CMOS) technology is the ideal candidate for reliable and scalable fabrication. Making the direct leap from academic fabrication to qubits fabricated fully by industrial CMOS standards is difficult without intermediate solutions. With a flexible back-end-of-line (BEOL) new functionalities such as micromagnets or superconducting circuits can be added in a post-CMOS process to study the physics of these devices or achieve proof of concepts. Once the process is established it can be incorporated in the foundry-compatible proce…
We propose a method to electrically control electron spins in donor-based qubits in silicon. By taking advantage of the hyperfine coupling difference between a single-donor and a two-donor quantum dot, spin rotation can be driven by inducing an electric dipole between them and applying an alternating electric field generated by in-plane gates. These qubits can be coupled with exchange interaction controlled by top detuning gates. The qubit device can be fabricated deep in the silicon lattice with atomic precision by scanning tunneling probe technique. We have combined a large-scale full band a…
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2$\times$2 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one…
We present investigations of Josephson charge-phase qubits inductively coupled to a radio-frequency driven tank-circuit enabling the readout of the states by measuring the Josephson inductance of the qubit. The circuits including junctions with linear dimensions of 60 nm and 80 nm are fabricated from Nb trilayer and allowing the determination of relevant sample parameters at liquid helium temperature. The observed partial suppression of the circulating supercurrent at 4.2 K is explained in the framework of a quantum statistical model. We have probed the ground-state properties of qubit structu…
In many physical approaches to quantum computation, error-correction schemes assume the ability to form two-dimensional qubit arrays with nearest-neighbor couplings and parallel operations at multiple qubit sites. While semiconductor spin qubits exhibit long coherence times relative to their operation speed and single-qubit fidelities above error correction thresholds, multiqubit operations in two-dimensional arrays have been limited by fabrication, operation, and readout challenges. We present a two-by-two array of four singlet-triplet qubits in gallium arsenide and show simultaneous coherent…
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade (CB) is measured in a double-top-gated lateral quantum dot nanostructure. The CB terminates with open diamonds up to \pm 10 mV of DC v…
We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures.
The quality of the semiconductor-barrier interface plays a pivotal role in the demonstration of high quality reproducible quantum dots for quantum information processing. In this work, we have measured SiMOSFET Hall bars on undoped Si substrates in order to investigate the quality of the devices fabricated in a full CMOS process. We report a record mobility of 17'500 cm2/Vs with a sub-10 nm oxide thickness indicating a high quality interface, suitable for future qubit applications. We also study the influence of gate materials on the mobilities and discuss the underlying mechanisms, giving ins…
We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit.
We present measurements of superconducting flux qubits embedded in a three dimensional copper cavity. The qubits are fabricated on a sapphire substrate and are measured by coupling them inductively to an on-chip superconducting resonator located in the middle of the cavity. At their flux-insensitive point, all measured qubits reach an intrinsic energy relaxation time in the 6-20 microseconds range and a pure dephasing time comprised between 3 and 10 microseconds. This significant improvement over previous works opens the way to the coherent coupling of a flux-qubit to individual spins.
We report coherent operation of a singlet-triplet qubit controlled by the arrangement of two electrons in an adjacent double quantum dot. The system we investigate consists of two pairs of capacitively coupled double quantum dots fabricated by electrostatic gates on the surface of a GaAs heterostructure. We extract the strength of the capacitive coupling between qubit and double quantum dot and show that the present geometry allows fast conditional gate operation, opening pathways to multi-qubit control and implementation of quantum algorithms with spin qubits.
A flux qubit biased at its symmetry point shows a minimum in the energy splitting (the gap), providing protection against flux noise. We have fabricated a qubit whose gap can be tuned fast and have coupled this qubit strongly to an LC oscillator. We show full spectroscopy of the qubit-resonator system and generate vacuum Rabi oscillations. When the gap is made equal to the oscillator frequency $ν_{osc}$ we find the strongest qubit-resonator coupling ($g/h\sim0.1ν_{\rm osc}$). Here being at resonance coincides with the optimal coherence of the symmetry point. Significant further increase of the…
Fast quantum oscillations of a charge qubit in a double quantum dot fabricated in a Si/SiGe heterostructure are demonstrated and characterized experimentally. The measured inhomogeneous dephasing time T2* ranges from 127ps to ~2.1ns; it depends substantially on how the energy difference of the two qubit states varies with external voltages, consistent with a decoherence process that is dominated by detuning noise(charge noise that changes the asymmetry of the qubit's double-well potential). In the regime with the shortest T2*, applying a charge-echo pulse sequence increases the measured inhomo…
The greatest challenge in quantum computing is achieving scalability. Classical computing previously faced a scalability issue, solved with silicon chips hosting billions of fin field-effect transistors (FinFETs). These FinFET devices are small enough for quantum applications: at low temperatures, an electron or hole trapped under the gate serves as a spin qubit. Such an approach potentially allows the quantum hardware and its classical control electronics to be integrated on the same chip. However, this requires qubit operation at temperatures above 1K, where the cooling overcomes heat dissip…
In thin superconducting wires, phase-slip by thermal activation near the critical temperature is a well-known effect. It has recently become clear that phase-slip by quantum tunnelling through the energy barrier can also have a significant rate at low temperatures. In this paper it is suggested that quantum phase-slip can be used to realize a superconducting quantum bit without Josephson junctions. A loop containing a nanofabricated very thin wire is biased with an externally applied magnetic flux of half a flux quantum, resulting in two states with opposite circulating current and equal energ…
We have fabricated a Josephson charge qubit by capacitively coupling a single-Cooper-pair box (SCB) to an electrometer based upon a single-electron transistor configured for radio-frequency readout (RF-SET). Charge quantization of 2e is observed and microwave spectroscopy is used to extract the Josephson and charging energies of the box. We perform coherent manipulation of the SCB by using very fast DC pulses and observe quantum oscillations in time of the charge that persist to ~=10ns. The observed contrast of the oscillations is high and agrees with that expected from the finite E_J/E_C rati…
Silicon spin qubits are a promising quantum computing platform offering long coherence times, small device sizes, and compatibility with industry-backed device fabrication techniques. In recent years, high fidelity single-qubit and two-qubit operations have been demonstrated in Si. Here, we demonstrate coherent spin control in a quadruple quantum dot fabricated using isotopically enriched 28Si. We tune the ground state charge configuration of the quadruple dot down to the single electron regime and demonstrate tunable interdot tunnel couplings as large as 20 GHz, which enables exchange-based t…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstrat…
Solid state quantum processors based on spins in silicon quantum dots are emerging as a powerful platform for quantum information processing. High fidelity single- and two-qubit gates have recently been demonstrated and large extendable qubit arrays are now routinely fabricated. However, two-qubit gates are mediated through nearest-neighbor exchange interactions, which require direct wavefunction overlap. This limits the overall connectivity of these devices and is a major hurdle to realizing error correction, quantum random access memory, and multi-qubit quantum algorithms. To extend the conn…
The dark exciton state in semiconductor quantum dots constitutes a long-lived solid-state qubit which has the potential to play an important role in implementations of solid-state based quantum information architectures. In this work, we exploit deterministically fabricated QD microlenses with enhanced photon extraction, to optically prepare and readout the dark exciton spin and observe its coherent precession. The optical access to the dark exciton is provided via spin-blockaded metastable biexciton states acting as heralding state, which are identified deploying polarization-sensitive spectr…
Quantum computing architectures are on the verge of scalability, a key requirement for the implementation of a universal quantum computer. The next stage in this quest is the realization of quantum error correction codes, which will mitigate the impact of faulty quantum information on a quantum computer. Architectures with ten or more quantum bits (qubits) have been realized using trapped ions and superconducting circuits. While these implementations are potentially scalable, true scalability will require systems engineering to combine quantum and classical hardware. One technology demanding i…
Overcoming Configuration Bottleneck: Modular Pathways to Stable Semiconductor Spin-Qubit Arrays
National Institute of Standards and Technology（美国国家标准与技术研究院）；Joint Center for Quantum Information and Computer Science, University of Maryland（马里兰大学量子信息与计算科学联合中心）；University of Maryland（马里兰大学）；University of Pennsylvania（宾夕法尼亚大学）
