发表机构
Quobly; STMicroelectronics（Quobly; 意法半导体）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
该研究开发了与300mm CMOS兼容的QSOI(R)技术，显著降低器件变异性，实现69%产率检测第一电子，位置离散度±35 mV，为可扩展量子计算提供有前景平台。
AI 中文摘要
我们报告了与300mm CMOS制造兼容并改编自28nm全耗尽绝缘体上硅（28nm FD-SOI）平台、用于可扩展量子计算的量子绝缘体上硅（QSOI(R)）技术开发进展。我们比较了使用标准28nm FD-SOI和QSOI(R)技术制造的量子器件，并展示了单个器件室温静电特性的显著改进。此外，QSOI(R)技术显著降低了器件变异性以及晶圆级器件特性的离散度。晶体管指标通过TCAD模拟复现，表明器件的静电行为符合QSOI(R)技术的预期。低于2K的晶圆级测量显示，可重复的量子点可降至少电子态，成功检测第一电子的产率为69%，377个量子点的第一电子位置离散度为±35 mV。这些结果确立了QSOI(R)作为CMOS兼容量子器件共集成的有前景平台。
英文摘要
We report progress toward the development of a quantum silicon-on-insulator (QSOI(R)) technology compatible with 300mm CMOS fabrication and adapted from the 28nm Fully-Depleted SOI (28nm FD-SOI) platform for scalable quantum computing. We compare quantum devices fabricated with standard 28nm FD-SOI and QSOI(R) technologies, and show striking improvements of room temperature electrostatic properties of the individual device. Moreover, the QSOI(R) technology has significantly reduced the device variability and the dispersion of device properties at the wafer level. Transistor metrics are reproduced by TCAD simulations showing that the electrostatics of the devices behave as expected for QSOI(R) technology. Wafer-scale measurements at sub-2K show reproducible quantum dots down to the few-electron regime with 69\% yield for successful charge detection of the first electron and a dispersion of the first electron position of $\mathrm{\pm 35 mV}$ over 377 quantum dots. These results establish QSOI(R) as a promising platform for CMOS-compatible quantum device co-integration.
