The temperature dependence of the charge carrier density, mobility and Seebeck coefficient of melt-grown, bulk ZnGa2O4 single crystals was measured between 10 K and 310 K. The electrical conductivity at room temperature is about s = 286 S/cm due to a high electron concentration of n = 3.26*10^(19) cm^(-3), caused by unintenional doping. The mobility at room temperature is mu = 55 cm^2/Vs, whereas the scattering on ionized impurities limits the mobility to mu =62 cm^2/Vs for temperatures lower than 180 K. The Seebeck coefficient relative to aluminum at room temperature is S_(ZnGa2O4-Al) = (-125+-2) muV/K and shows a temperature dependence as expected for degenerate semiconductors. At low temperatures, around 60 K we observed a maximum of the Seebeck coefficient due to the phonon drag effect.
Bulk crystals of zinc oxide can be grown from the melt by a Bridgman technique under pressure. This new technology using an iridium crucible shows the potential to yield large single crystals of good crystalline perfection. Crystals with diameters up to 33 mm and a length of up to 50 mm have been demonstrated. The impurity content can be strongly reduced by using the crucibles repeatedly.
Small ruby crystals were grown by the Czochralski technique in different atmospheres and their actual chromium content was analysed by a wet chemical method. The chromium distribution coefficient k was found to be strongly dependent on oxygen partial pressure p(O2). It ranges from k=0.3 in a reducing atmosphere to k=1.2 in a slightly oxidizing atmosphere and to a good approximation k depends linearly on log(p(O2)). The experimental data are discussed on the basis of thermodynamic equilibrium calculations.
The paper reports on the Raman/fluorescence study of melt-grown Al2O3/GdAlO3 eutectic composites. Raman bands from the -alumina and gadolinium perovskite phases identified by X-ray diffraction were systematically observed together in the domains optically visible, even when the latter were much larger than the Raman probe. This suggests a more complex interlocking pattern than appearing on SEM or optical microscopy images. The polarization of alumina and GdAlO3 Raman bands evidenced the preferential orientation of Al2O3 phase with respect to the sample growth direction, in agreement wi…
The temperature dependence of the Seebeck coefficient of homoepitaxial metal organic vapor phase (MOVPE) grown, silicon doped $β$-Ga$_2$O$_3$ thin films was measured relative to aluminum. For room temperature we found the relative Seebeck coefficient of $S_{β\text{-Ga}_2\text{O}_3\text{-Al}}=(-300\pm20)\;μ$V/K. At high bath temperatures $T>240$ K, the scattering is determined by electron-phonon-interaction. At lower bath temperatures between $T=100$ K and $T=300$ K, an increase in the magnitude of the Seebeck coefficient is explained in the frame of Strattons formula. The influence of the diff…
Bi2Sr2-xLaxCaCu2O8+d superconducting whiskers were successfully grown from Bi-rich meltscontaining various La contents. Effect of La-doping on the whisker growth, structure and superconductivity has been studied. It has been found that the whiskers can be grown only from La-doped melts, no whisker was obtained from the La-free melt x=0. Within the doping region x=0.025-0.3, all the grown whiskers are of the Bi-2212 pure phase. The c-axis lattice constant decreases with increasing the La content in the melt. The effect of La doping on the superconductivity is similar to that of other rare earth…
We report a longitudinal spin Seebeck effect (SSE) study in epitaxially grown FeF2(110) antiferromagnetic (AFM) thin films with strong uniaxial anisotropy over the temperature range of 3.8 - 250 K. Both the magnetic field- and temperature-dependent SSE signals below the Néel temperature (TN=70 K) of the FeF2 films are consistent with a theoretical model based on the excitations of AFM magnons without any net induced static magnetic moment. In addition to the characteristic low-temperature SSE peak associated with the AFM magnons, there is another SSE peak at TN which extends well into the para…
Realization of intrinsic surface dominant transport in a wide temperature region for a topological insulators (TIs) is an important frontier research in order to promote the progresses of TIs towards the future electronics. We report here systematic measurements of longitudinal electrical transport, Shubnikov-de-Haas (SdH) quantum oscillations, Hall coefficient (R_H^2D), and Seebeck coefficient as a function of film thickness (d) and temperature using high quality Bi2-xSbxTe3-ySey (BSTS) single crystal thin films grown by physical vapor-phase deposition. The thickness dependence of sheet condu…
Nanowires of Pr_0.57 Ca_0.41 Ba_0.02 MnO_3 (PCBM) (diameter ~ 80-90 nm and length ~ 3.5 mm) were synthesized by a low reaction temperature hydrothermal method. Single-phase nature of the sample was confirmed by XRD experiments. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the morphology and microstructures of the nanowires. While the bulk PCBM is known to exhibit charge order (CO) below 230 K along with a ferromagnetic transition at 110 K, SQUID measurements on the nanowires of PCBM show that the charge order is completely absent and a…
When calcium titanate crystals are grown from stoichiometric melts, they crystallize in the cubic perovskite structure. Upon cooling to room temperature they undergo subsequent phase transitions to tetragonal and orthorhombic modifications. These phase transitions are disruptive and result in severely damaged crystals. This paper presents differential thermal analysis data for several prospective solvents, with the aim to identify a system offering the possibility to perform crystal growth of undistorted CaTiO$_3$ crystals by crystallizing them significantly below the melting point directly in…
α-Fe single crystals of rhombic dodecahedral habit were grown from a melt of Li$_{84}$N$_{12}$Fe$_{\sim 3}$. Crystals of several millimeter along a side form at temperatures around $T \approx 800^\circ$C. Upon further cooling the growth competes with the formation of Fe-doped Li$_3$N. The b.c.c. structure and good sample quality of α-Fe single crystals were confirmed by X-ray and electron diffraction as well as magnetization measurements and chemical analysis. A nitrogen concentration of 90\,ppm was detected by means of carrier gas hot extraction. Scanning electron microscopy did not reveal an…
Based on differential thermal analysis (DTA) and X-ray powder diffraction (XRD), a description of the system Nd$_2$O$_3$--Lu$_2$O$_3$--Sc$_2$O$_3$ was obtained by thermodynamic assessment. Four fields of primary crystallization could be identified; from melt compositions close to the Lu$_2$O$_3$--Sc$_2$O$_3$ edge the rare-earth oxide C-phase crystallizes first, which is stable down to room temperature. From Nd$_2$O$_3$ rich melts the X-phase forms, which is stable only at high temperatures. An additional field, where the alternative high-temperature phase H solidifies as primary product touche…
Lithium is one of the simplest metals, with negative charge carriers and a close reproduction of free electron dispersion. Experimentally, however, Li is one of a handful of elemental solids (along with Cu, Ag, Au etc.) where the sign of the Seebeck coefficient (S) is opposite to that of the carrier. This counterintuitive behavior still lacks a satisfactory interpretation. We calculate S fully from first-principles, within the framework of P.B. Allen's formulation of Boltzmann transport theory. Here it is crucial to avoid the constant relaxation time approximation, which gives a sign for S whi…
Ce3+ is known to show broad optical emission peaking in the green spectral range. For the stabilization of 3-valent cerium in ceramic phosphors such as calcium scandate CaSc2O4, often co-doping with sodium for charge compensation is performed (Na+, Ce3+ = 2 Ca2+). At the melting point of CaSc2O4 (ca. 2110 deg C), however, alkaline oxides evaporate completely and co-doping is thus no option for crystal growth from the melt. It is shown that even without co-doping Ce3+:CaSc2O4 crystal fibers can be grown from the melt by laser-heated pedestal growth (LHPG) in a suitable reactive atmosphere. Reac…
The growth of single crystals of MoS2 and WS2 by materials transport through a liquid salt flux made from a low melting mixture of NaCl and CsCl is described. The crystals are characterized by single crystal X-ray diffraction, which reveals that they are 2H-MoS2 with a small percentage (about 3%) of 3R intergrowths. The 2H-WS2 crystals display less than 1% of 3R intergrowths. Photoluminescence spectra of exfoliated monolayers suggest that MoS2 grown by this method has superior crystallinity in comparison to commercially-available MoS2 crystals.
Resistivity of metastable amorphous Ge2Sb2Te5 (GST) measured at device level show an exponential decline with temperature matching with the steady-state thin-film resistivity measured at 858 K (melting temperature). This suggests that the free carrier activation mechanisms form a continuum in a large temperature scale (300 K - 858 K) and the metastable amorphous phase can be treated as a super-cooled liquid. The effective activation energy calculated using the resistivity versus temperature data follow a parabolic behavior, with a room temperature value of 333 meV, peaking to ~377 meV at ~465 …
Commonly, germanium crystals are grown after the Czochralski (CZ) method. The crucible-free pedestal and floating zone (FZ) methods, which are widely used for silicon growth, are hardly known to be investigated for germanium. The germanium melt is more than twice as dense as liquid silicon, which could destabilize a floating zone. Additionally, the lower melting point and the related lower radiative heat loss is shown to reduce the stability especially of the FZ process with the consequence of a screw-like crystal growth. We found that the lower heat radiation of Ge can be compensated by the i…
Transparent conducting or semiconducting oxides are important materials for (transparent) optoelectronics and power electronics applications. While most of these oxides can be doped n-type only with room-temperature electron mobilities on the order of 100cm^2/Vs p-type oxides are needed for the realization of pn-junction devices but typically suffer from exessively low (<<1cm^2/Vs) hole mobilities. Tin monoxide (SnO) is one of the few p-type oxides with a higher hole mobility, lacking a well-established understanding of its hole transport properties. Moreover, growth of SnO is complicated by i…
The peculiar properties of zinc oxide (ZnO) make this material interesting for very different applications like light emitting diodes, lasers, and piezoelectric transducers. Most of these applications are based on epitaxial ZnO layers grown on suitable substrates, preferably bulk ZnO. Unfortunately the thermochemical properties of ZnO make the growth of single crystals difficult: the triple point 1975 deg C., 1.06 bar and the high oxygen fugacity at the melting point p_O2 = 0.35 bar lead to the prevailing opinion that ZnO crystals for technical applications can only be grown either by a hydrot…
We have demonstrated a new method for the large-area graphene growth, which can lead to a scalable low-cost high-throughput production technology. The method is based on growing single-layer or few-layer graphene films from a molten phase. The process involves dissolving carbon inside a molten metal at a specified temperature and then allowing the dissolved carbon to nucleate and grow on top of the melt at a lower temperature. The examined metals for the metal - carbon melts included copper and nickel. For the latter, pristine single layer graphene was grown successfully. The resulting graphen…
CuFeO$_2$ single crystals up to 50 mm in length and up to 10 mm in diameter were grown by the optical floating-zone method. Stoichiometric polycrystalline rods with a diameter of 6-12 mm were used as feed materials to produce crystals of sufficient size to be used as substrates for the growth of thin films of delafossites. For stable growth along the $c$-axis, low growth rates of 0.4 mm/h are necessary. Due to the incongruent melting behavior of CuFeO$_2$, a stable melt zone requires adjustment of the lamp power during growth. The melting of CuFeO$_2$ is not simply incongruent because the ther…
We report on a systematic investigation of the longitudinal spin Seebeck effect (LSSE) in a GGG(Gd3Ga5O12)/GdIG(Gd3Fe5O12)/Pt film series exhibiting an in-plane magnetic easy axis with a compensation temperature (T_Comp) that decreases from 270 to 220 K when decreasing GdIG film thickness from 272 to 31 nm, respectively. For all the films, the LSSE signal flips its sign below T_Comp. We demonstrate a universal scaling behavior of the temperature dependence of LSSE signal for our GdIG films around their respective T_Comp. Additionally, we demonstrate LSSE in a 31 nm GdIG film grown on a lattice…
Behaviour of a rare earth impurity of Eu in the PbTe single crystals grown by the Bridgman method from the melt with different initial concentrations of impurity N about 1*10+19 cm-3 and less is investigated with X-ray fluorescent element analysis, Secondary Neutral Mass Spectroscopy (SNMS), and magnetic measurements. The impurity distributions along and across the doped ingots are established. It is revealed that doping impurity enters into the bulk of doped crystals only if its initial concentration in the melt is high enough, approximately 1*10+20 cm-3. If this concentration is lower, about…
Bridgman method grown $Cs_2Li_3I_5$: an inter-alkali metal scintillator with high lithium content
Institute of Physics of the Czech Academy of Sciences（捷克科学院物理研究所）；Faculty of Chemical Technology, University of Chemistry and Technology（布拉格化工大学化学技术学院）
We have investigated recrystallization of amorphous Yttrium Iron Garnet (YIG) by annealing in oxygen atmosphere. Our findings show that well below the melting temperature the material transforms into a fully epitaxial layer with exceptional quality, both structural and magnetic.\\ In ferromagnetic resonance (FMR) ultra low damping and extremely narrow linewidth can be observed. For a 56 nm thick layer a damping constant of $α$=(6.63$\pm$1.50)$\cdot$10$^{-5}$ is found and the linewidth at 9.6 GHz is as small as 1.30$\pm$0.05 Oe which are the lowest values for PLD grown thin films reported so fa…
0.5%, 1%, 3% and 5% Ce-concentration single crystals of Tl2LiLuCl6 were grown from the melt using two zone vertical Bridgman technique. X-ray induced emission spectra showed Ce3+ emission between 370 nm and 540 nm wavelength range. Energy resolution, light yield and decay time of the grown samples were measured under γ-ray excitation at room temperature. Energy resolution of 5.6% (FWHM) with 27,000+-2700 light yield is found for 1%Ce doped sample. For the same dopant concentration, three decay time components are also observed. Variation of scintillation properties is observed as a function of…
A new method for preparation of single crystals of the superconducting intermetallic MgB2 compound from a Mg-Cu-B melt flux is presented. The high vapour pressure of Mg at elevated temperature is a serious challenge of the preparation process. The approximate thermodynamic calculations of the ternary Mg-Cu-B phase diagram show a beneficial effect of Cu, which extends the range of formation of MgB2 to lower temperatures. Within the as-solidified Mg-Cu-B melt flux the MgB2 compound forms plate-like single crystals up to a size of 0.2 x 0.2 x 0.05 mm3 or alternatively rims peritectically grown ar…
ZnO bulk crystals can be grown by several methods. 1) From the gas phase, usually by chemical vapor transport. Such CVT crystals may have high chemical purity, as the growth is performed without contact to foreign material. The crystallographic quality is often very high (free growth). 2) From melt fluxes such as alkaline hydroxides or other oxides (MoO3, V2O5, P2O5, PbO) and salts (PbCl2, PbF2). Melt fluxes offer the possibility to grow bulk ZnO under mild conditions (<1000 deg. C, atmospheric pressure), but the crystals always contain traces of solvent. The limited purity is a severe drawbac…
N type conductivity of \b{eta}-Ga2O3 grown from the melt is typically achieved using Sn and Si. In this paper, we experimentally and computationally investigate Hf doping of \b{eta}-Ga2O3 single crystals using UV-Vis-NIR absorption and Hall Effect measurements and hybrid functional calculations. Unintentionally-doped and Hf-doped samples with a nominal concentration of 0.5at% were grown from the melt using vertical gradient freeze (VGF) and Czochralski method in mixed Ar+O2 atmosphere. We demonstrate Hf dopants, predicted to incorporate on the octahedral GaII site as a shallow donor, achieve d…
Ac electrical measurements have been reported for alkali halide mixed crystals that were melt grown from NaCl, KCl and KBr starting materials. They showed a nonlinear variation of all the electrical parameters with the bulk composition. Here, we show that these mixed systems, depending on their major constituent, are classified into three categories in each of which, the activation energy for the ac conductivity increases linearly with B$Ω$, where B is the isothermal bulk modulus and $Ω$ the mean volume per atom.
Large single crystals of the double-perovskite Ba$_2$ScNbO$_6$ were grown from the melt for the first time. With a lattice parameter at room temperature of 4.11672(1) Å, this cubic double-perovskite has an excellent lattice match to BaSnO$_3$, PbZr$_{0.9}$Ti$_{0.1}$O$_3$, LaInO$_3$, BiScO$_3$, and other perovskites of contemporary interest. Differential thermal analysis showed that Ba$_2$ScNbO$_6$ melts at 2165$\pm$30°C in an inert atmosphere. Competitive grain growth was visualized by energy dispersive Laue mapping. X-ray diffraction rocking curve measurements revealed full width at half maxi…
Bulk single crystals of manganese arsenide (MnAs) were grown from melt at 1 GPa and 1100 °C by using a cubic-anvil, high-pressure, and high-temperature technique. The as-grown black colored crystals extracted from solidified lump exhibit a plate-like morphology, with flat surfaces and maximum dimensions up to ~ 3 x 2 x 0.5 mm3. The hexagonal crystal structure at room temperature was confirmed by X-ray diffraction [B81, space group P63/mmc, No 194, Z = 2, a = 3.7173(4) Å, b = 3.7173(4) Å, c = 5.7054(8) Å, and V = 68.277(16) Å3]. Temperature-dependent magnetization measurements reveal the occurr…
Delafossite oxide CuAlO2 has engaged great attention as a promising p-type conducting oxide. In this work, high-quality CuAlO2 single crystals with a size of several millimeters (mm) are successfully achieved with a reactive crucible melting method. The crystals are characterized by X-ray diffraction, scanning electron microscopy with energy-dispersive spectroscopy, transport measurement, and magnetic susceptibility measurement. The grown single crystals are free of contamination from a copper oxide flux. This work provides a new approach to growing high-quality delafossite oxide CuAlO2 with a…
Novel filled skutterudites EpyNi4Sb12-xSnx (Ep = Ba and La) have been prepared by arc melting followed by annealing at 250C, 350C and 450C up to 30 days in sealed quartz vials. A maximum filling level of y = 0.93 and y = 0.65 was achieved for the Ba and La filled skutterudite, respectively. Single-phase samples with the composition Ni4Sb8.2Sn3.8, Ba0.42Ni4Sb8.2Sn3.8 and Ba0.92Ni4Sb6.7Sn5.3 were employed for measurements of the physical properties i.e. temperature dependent electrical resistivity, Seebeck coefficient and thermal conductivity. Resistivity data showed a crossover from metallic to…
High-quality thermoelectric LaxSr1-xTiO3 (LSTO) layers (here with x = 0.2), with thicknesses ranging from 20 nm to 700 nm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 x 10-4 ohm.cm at room temperature), one order of magnitude lower than commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectri…
Complex hierarchical shapes are widely known in biogenic single crystals, but growing of intricate synthetic metal single crystals is still a challenge. Here we report on a simple method for growing intricately shaped single crystals of gold, each consisting of a micron-sized crystal surrounded by a nanoporous structure, while the two parts comprise a single crystal. This is achieved by annealing thin films of gold and germanium to solidify a eutectic composition melt at a hypoeutectic concentration (Au-enriched composition). Transmission electron microscopy and synchrotron submicron scanning …
Low-temperature epitaxial growth of refractory transition-metal nitride thin films by means of physical vapor deposition has been a recurring theme in advanced thin-film technology for several years. In the present study, 150-nm-thick epitaxial HfN layers are grown on MgO(001) by reactive high-impulse magnetron sputtering (HiPIMS) with no external substrate heating. Maximum film growth temperatures Ts due to plasma heating range from 70-150 °C, corresponding to Ts/Tm = 0.10-0.12 (in which Tm is the HfN melting point in K). During HiPIMS, gas and sputtered-metal ion fluxes incident at the growi…
Topological superconductivity, implying gapless protected surface states, has recently been proposed to exist in the compound CuxBi2Se3. Unfortunately, low diamagnetic shielding fractions and considerable inhomogeneity have been reported in this compound. In an attempt to understand and improve on the finite superconducting volume fractions, we have investigated the effects of various growth and post-annealing conditions. With a melt-growth (MG) method, diamagnetic shielding fractions of up to 56% in Cu0.3Bi2Se3 have been obtained, the highest value reported for this method. We investigate the…
Dark blue single crystals of Al$_{1.75}^{3+}$ Ti$_{1.0}^{4+}$ Ti$_{0.25}^{3+}$O$_5$ were grown with a novel synthesis method based on the reaction of a Ti3+/Ti4+ containing langbeinite melt and Al$_2$O$_3$. The obtained needles crystallize in the pseudobrookite structure and undergo two reversible phase transitions from orthorhombic Cmcm to C2/m first and subsequently to C2 symmetry. Like the known aluminum titanate pseudobrookites, anistropic thermal expansion is observed. The temperature evolution of the crystal structure reveals some insights into the mechanism leading to the decomposition …
Crystals in nature often demonstrate curved morphologies rather than classical faceted surfaces. Inspired by biogenic curved single crystals, we demonstrate that gold single crystals exhibiting curved surfaces can be grown with no need of any fabrication steps. These single crystals grow from the confined volume of a droplet of a eutectic composition melt which forms via the dewetting of nanometric thin films. We can control their curvature by controlling the environment in which the process is carried out, including several parameters, such as the contact angle and the curvature of the drops …
Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe2 (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition an…
X-ray structural and spectral analyses, X-ray diffraction topography and metallography were used to study dendrite structure of Al-4 wt % Cu single crystals grown by the Bridgman technique at a rate of 1 mm/min and on seeds with <001> orientation. The single crystals were obtained upon the crystallization of the melt under the action of a pressure and the gravitational-field component directed along the surface of the crystallization front. Non-uniform distribution of copper in the solid solution and the eutectic content has been found in transverse section of single crystals and strong increa…
Commercially available gases contain residual impurities leading to a background oxygen partial pressure of typically several 10^{-6} bar, independent of temperature. This oxygen partial pressure is inappropriate for the growth of some single crystals where the desired oxidation state possesses a narrow stability field. Equilibrium thermodynamic calculations allow the determination of dynamic atmosphere compositions yielding such self adjusting and temperature dependent oxygen partial pressures, that crystals like ZnO, Ga2O3, or Fe{1-x}O can be grown from the melt.
Single crystals in nature often demonstrate fascinating intricate porous morphologies rather than classical faceted surfaces. We attempt to grow such crystals, drawing inspiration from biogenic porous single crystals. Here we show that nanoporous single crystals of gold can be grown with no need for any elaborate fabrication steps. These crystals are found to grow following solidification of a eutectic composition melt that forms as a result of the dewetting of nanometric thin films. We also present a kinetic model that shows how this nano-porous single-crystalline structure can be obtained, a…
Establishing strong electron-correlations not only shed lights on overcoming the trade-off limitations for optimizing thermoelectric materials, but can also introduce new functionalities that extend the vision of conventional thermoelectric applications. Here, we demonstrate that the high thermoelectric and thermistor functionalities coexist in lattice distorted SrNbxTi1-xO3 films with electron correlations between carriers and ordering aligned lattice dipoles. As-grown SrNbxTi1-xO3/SrTiO3 with effectively preserved interfacial strains exhibits cross-plane charge ordering and orbital anisotrop…
Ferrimagnetic Y$_3$Fe$_5$O$_{12}$ (YIG) is the prototypical material for studying magnonic properties due to its exceptionally low damping. By substituting the yttrium with other rare earth elements that have a net magnetic moment, we can introduce an additional spin degree of freedom. Here, we study the magnetic coupling in epitaxial Y$_3$Fe$_5$O$_{12}$/Gd$_3$Fe$_5$O$_{12}$ (YIG/GIG) heterostructures grown by pulsed laser deposition. From bulk sensitive magnetometry and surface sensitive spin Seebeck effect (SSE) and spin Hall magnetoresistance (SMR) measurements, we determine the alignment o…
The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 C), followed by slow cooling (2 C per hour).The weak anti localization (WAL) related low field (2 Tesla) magneto-conductance at low temperatures (2.5 K and 20 K) has been analysed and discussed using the Hikami- Larkin - Nagaoka (HLN) model. Summarily, the short letter reports an easy and versatile method for crystal growth of bulk Sb2Te3 topological insulator (TI) and its brief physical property characterization.
Highly-perfect platelet single crystals of Tl_2Ba_2CuO_{6+d} (Tl-2201) were grown by a self-flux technique. A novel encapsulation scheme allowed the precursors to react prior to the sealing required to contain volatile thallium oxides, and permitted the removal of melt at the conclusion of growth, reproducibly producing high yields of clean crystals. The crystals were annealed under well-controlled oxygen partial pressures, then characterised. They have sharp superconducting transitions, narrow X-ray rocking curves and a low 4% substitution of thallium by copper, all evidence of their high per…
Large high-quality single crystals of Bi2Sr2Can-1CunO2n+4+d (n = 2, 3) were successfully grown using an improved traveling solvent floating zone (TSFZ) method, which features a slow growth rate and steep temperature gradient along the melting zone. By measuring anisotropic resistivities and susceptibilities of Bi2Sr2CaCu2O8+d, the characteristic pseudogap temperature T* was studied as a function of doping. The T* suggest that the pseudogap is not simply a precursor of high-Tc superconductivity, but that the pseudogap and the superconducting gap compete with each other. The anisotropic resistiv…
A description is given of the traveling solvent technique, which has been used for the crystal growth of both congruently and incongruently melting materials of many classes of intermetallic, chalcogenide, semiconductor and oxide materials. The use of a solvent, growth at lower temperatures and the zoning process, that are inherent ingredients of the method, can help to grow large, high structural quality, high purity crystals. In order to optimize this process, careful control of the various growth variables is imperative; however, this can be difficult to achieve due to the large number of i…
