ZnO bulk crystals can be grown by several methods. 1) From the gas phase, usually by chemical vapor transport. Such CVT crystals may have high chemical purity, as the growth is performed without contact to foreign material. The crystallographic quality is often very high (free growth). 2) From melt fluxes such as alkaline hydroxides or other oxides (MoO3, V2O5, P2O5, PbO) and salts (PbCl2, PbF2). Melt fluxes offer the possibility to grow bulk ZnO under mild conditions (<1000 deg. C, atmospheric pressure), but the crystals always contain traces of solvent. The limited purity is a severe drawback, especially for electronic applications. 3) From hydrothermal fluxes, usually alkaline (KOH, LiOH) aqueous solutions beyond the critical point. Due to the amphoteric character of ZnO, the supercritical bases can dissolve it up to several per cent of mass. The technical requirements for this growth technology are generally hard, but this did not hinder its development as the basic technique for the growth of α-quartz, and meanwhile also of zinc oxide, during the last decades. 4) From pure melts, which is the preferred technology for numerous substances applied whenever possible, e.g. for the growth of silicon, gallium arsenide, sapphire, YAG. The benefits of melt growth are (i) the high growth rate and (ii) the absence of solvent related impurities. In the case of ZnO, however, it is difficult to find container materials that are compatible from the thermal (fusion point Tf = 1975 deg. C) and chemical (required oxygen partial pressure) point of view. Either cold crucible (skull melting) or Bridgman (with reactive atmosphere) techniques were shown to overcome the problems that are inherent to melt growth. Reactive atmospheres allow to grow not only bulk ZnO single crystals, but also other TCOs such as β-Ga2O3 and In2O3.
In this paper, the reported experimental data in [Sci. Rep., 2012, 2, 533] related to electrical transport properties in bulk ZnO, ZnMgO/ZnO, and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitatively and the most important scattering parameters for controlling electron concentration and electron mobility were obtained. Treatment of intrinsic mechanisms included polar-optical phonon scattering, piezoelectric scattering and acoustic deformation potential scattering. For extrinsic mechanisms, ionized impurity, dislocation scattering, and strain-induced fields were includ…
Structural and magnetic properties have been studied for polycrystalline Zn_1-xMn_xO (x=0.02, 0.03, 0.05). Low-temperature (~500 oC) synthesis leaves unreacted starting ZnO and manganese oxides. Contrary to a recent report, no bulk ferromagnetism was observed for single-phase materials synthesized in air at temperatures above 900 oC. Single-phase samples show paramagnetic Curie-Weiss behavior.
Recently, d0 ferromagnetic materials have been projected as one of the promising novel materials for spintronics applications. In this work, we have studied Li-doped ZnO compounds, i.e. Zn1-xLixO (x=0, 0.02, 0.04, and 0.06) samples, prepared by the solid-state reaction route method. From the study of crystal structure using X-ray diffraction (XRD) patterns, it is evident that the prepared materials have been formed in a single-phase of the hexagonal wurtzite structure. The refinement of the XRD patterns suggests that there are very small changes in the lattice parameters upon Li-incorporation …
Hexagonal [0001] nonpassivated ZnO nanowires are studied with density functional calculations. The band gap and Young's modulus in nanowires which are larger than those in bulk ZnO increase along with the decrease of the radius of nanowires. We find ZnO nanowires have larger effective piezoelectric constant than bulk ZnO due to their free boundary. In addition, the effective piezoelectric constant in small ZnO nanowires doesn't depend monotonously on the radius due to two competitive effects: elongation of the nanowires and increase of the ratio of surface atoms.
An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1x1017 cm-2 fluence, 70 min exposure under Bi-ion beam, EBi+ = 30 keV, pulsed ion-current density of not more than 0.8 mA/cm2 with a repetition rate of 12.5 Hz). The final samples were qualified by X-ray photoelectron core-level and valence band mapping spectroscopy applying ASTM materials science standard. The spectroscopy data obtained was discussed on the basis of DFT-models for Bi-embedding into ZnO host-matrices. It was established that in the case of direct Bi-…
The issue of the quantitative analysis of time-resolved photoluminescence experiments is addressed by developing and describing two approaches for determination of unimolecular lifetime, bimolecular recombination coefficient, and equilibrium free-carrier concentration, based on a quite general second-order expression of the electron-hole recombination rate. Application to the case of band-edge emission of ZnO single crystals is reported, evidencing the signature of sub-nanosecond second-order recombination dynamics for optical transitions close to the interband excitation edge. The resulting f…
Bulk crystals of zinc oxide can be grown from the melt by a Bridgman technique under pressure. This new technology using an iridium crucible shows the potential to yield large single crystals of good crystalline perfection. Crystals with diameters up to 33 mm and a length of up to 50 mm have been demonstrated. The impurity content can be strongly reduced by using the crucibles repeatedly.
Despite the lack of reproducible experimental confirmation, group-V elements have been considered as possible sources of p-type doping in ZnO in the form of simple and complex defects. Using ab initio calculations, based on state-of-the-art hybrid exchange-correlation functional, we study a wide range of defects and defect complexes related with N, P, As, and Sb impurities. We show that none of the candidates for p-type doping can be considered a good source of holes in the valence band due to deep acceptor levels and low formation energies of compensating donor defects. In addition, we discus…
By studying Fe-doped ZnO pellets and thin films with various x-ray spectroscopic techniques, and complementing this with density functional theory calculations, we find that Fe-doping in bulk ZnO induces isovalent (and isostructural) cation substitution (Fe2+ -> Zn2+). In contrast to this, Fe-doping near the surface produces both isovalent and heterovalent substitution (Fe3+ -> Zn2+). The calculations performed herein suggest that the most likely defect structure is the single or double substitution of Zn with Fe, although, if additional oxygen is available, then Fe substitution with interstit…
We have studied the electronic structure and the magnetism of Cu-doped ZnO nanowires, which have been reported to show ferromagnetism at room temperature [G. Z. Xing ${et}$ ${al}$., Adv. Mater. {\bf 20}, 3521 (2008).], by x-ray photoemission spectroscopy (XPS), x-ray absorption spectroscopy (XAS) and x-ray magnetic circular dichroism (XMCD). From the XPS and XAS results, we find that the Cu atoms are in the "Cu$^{3+}$" state with mixture of Cu$^{2+}$ in the bulk region ($\sim$ 100 nm), and that "Cu$^{3+}$" ions are dominant in the surface region ($\sim$ 5 nm), i.e., the surface electronic stru…
Time-resolved optical techniques are used to explore electron spin dynamics in bulk and epilayer samples of n-type ZnO as a function of temperature and magnetic field. The bulk sample yields a spin coherence time T2* of 20 ns at T = 30 K. Epilayer samples, grown by pulsed laser deposition, show a maximum T2* of 2 ns at T = 10 K, with spin precession persisting up to T = 280 K.
Surface acoustic wave (SAW) devices based on thin films of ZnO are a well established technology. However, SAW devices on bulk ZnO crystals are not practical at room temperature due to the significant damping caused by finite electrical conductivity of the crystal. Here, by operating at low temperatures, we demonstrate effective SAW devices on the (0001) surface of bulk ZnO crystals, including a delay line operating at SAW wavelengths of λ = 4 and 6 μm and a one-port resonator at a wavelength of λ = 1.6 μm. We find that the SAW velocity is temperature dependent, reaching $v \simeq 2.68$ km/s a…
Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift velocity on electron density ranging from 1.42$\times$10$^{17}$ cm$^{-3}$ to 1.3$\times$10$^{20}$ cm$^{-3}$ at a given electric field is deduced after estimation of the sample contact resistance and the Hall electron mobility. Manifestation of the highest electron drift velocity up to $\sim$1.5$\times$10$^{7}$ cm/s is estimated for electron density of 1.42$\…
The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatments in a reductive atmosphere in order to introduce defects in the samples in a controlled way. A detailed structural analysis is carried out in order to characterize the induced defects and their co…
Using group theory and Kane-like $\mathbf{k\cdot p}$ model together with the Löwdining partition method, we derive the expressions of spin-orbit coupling of electrons and holes, including the linear-$k$ Rashba term due to the intrinsic structure inversion asymmetry and the cubic-$k$ Dresselhaus term due to the bulk inversion asymmetry in wurtzite semiconductors. The coefficients of the electron and hole Dresselhaus terms of ZnO and GaN in wurtzite structure and GaN in zinc-blende structure are calculated using the nearest-neighbor $sp^3$ and $sp^3s^\ast$ tight-binding models separately.
A comparative experimental study of pulsed laser ablation in vacuum of two binary semiconductors, zinc oxide and indium phosphide, has been performed using IR-and visible laser pulses with particular attention to cluster generation. Neutral and cationic Zn\_n O\_m and In\_n P\_m particles of various stoichiometry have been produced and investigated by time-of-flight mass spectrometry. At ZnO ablation, large cationic (n>9) and all neutral clusters are mainly stoichiometric in the ablation plume. In contrast, indium phosphide clusters are strongly indium-rich with In\_4 P being a magic cluster. …
Ultrafast time-resolved photoluminescence spectroscopy following one- and two-photon excitation of ZnO powder is used to gain unprecedented insight into the surprisingly high external quantum efficiency of its "green" defect emission band. The role of exciton diffusion, the effects of reabsorption, and the spatial distributions of radiative and nonradiative traps are comparatively elucidated for the ultraviolet excitonic and "green" defect emission bands in both unannealed, nanometer-sized ZnO powders and annealed, micrometer-sized ZnO:Zn powders. We find that the primary mechanism limiting qu…
Colloidal zinc oxide (ZnO) nanoparticles are frequently used in the field of organic photovoltaics for the realization of solution-producible, electron-selective interfacial layers. Despite of the widespread use, there is a lack of detailed investigations regarding the impact of structural properties of the particles on the device performance. In this work, ZnO nanoparticles with varying surface-area-to-volume ratio were synthesized and implemented into polymer-fullerene bulk heterojunction solar cells with a gas-permeable top electrode. By comparing the electrical characteristics before and a…
We realize a two-dimensional electron system (2DES) in ZnO by simply depositing pure aluminum on its surface in ultra-high vacuum, and characterize its electronic structure using angle-resolved photoemission spectroscopy. The aluminum oxidizes into alumina by creating oxygen vacancies that dope the bulk conduction band of ZnO and confine the electrons near its surface. The electron density of the 2DES is up to two orders of magnitude higher than those obtained in ZnO heterostructures. The 2DES shows two $s$-type subbands, that we compare to the $d$-like 2DESs in titanates, with clear signature…
Elucidating the underlying principles behind band gap engineering is paramount for the successful implementation of semiconductors in photonic and optoelectronic devices. Recently it has been shown that the band gap of a wide and direct band gap semiconductor, such as ZnO, can be modified upon co-crystallization with amino acids, with the role of the biomolecules remaining unclear. Here, by probing and modeling the light emitting properties of ZnO-amino acid co-crystals, we identify the amino acids role on this band gap modulation and demonstrate their effective chirality transfer to the inter…
In this report we present a systematic study on the preparation of Co:ZnO ceramics via standard solid-state route from different Co precursors (Co3O4, CoO and metallic Co) and atmospheres (O2 and Ar). Particular emphasis was done on the defect chemistry engineering and on the sintering growth kinetics. First-principles calculations based on density functional theory were employed to determine the formation energy of the main point defects in ZnO and Co:ZnO systems. Based on the theoretical results a set of chemical reactions was proposed. A detailed microstructural characterization was perform…
We report the synthesis of colloidal Mn2+-doped ZnO (Mn2+:ZnO) quantum dots and the preparation of room-temperature ferromagnetic nanocrystalline thin films. Mn2+:ZnO nanocrystals were prepared by a hydrolysis and condensation reaction in DMSO under atmospheric conditions. Synthesis was monitored by electronic absorption and electron paramagnetic resonance (EPR) spectroscopies. Zn(OAc)2 was found to strongly inhibit oxidation of Mn2+ by O2, allowing the synthesis of Mn2+:ZnO to be performed aerobically. Mn2+ ions were removed from the surfaces of as-prepared nanocrystals using dodecylamine to …
Series of metastable Me1-xZnxO solid solutions (Me = Ni2+, Co2+, Fe2+, Mn2+) with the rocksalt (rs) crystal structure have been synthesized from the binary oxides by quenching from 7.7 GPa and 1450-1650 K. Phase composition of the samples, as well as structural properties and stoichiometry of synthesized solid solutions have been studied by X-ray powder diffraction, both conventional and with synchrotron radiation. The widest (0.3 \leq x \leq 0.8) composition range of the existence of individual rock-salt solid solution has been established for the NiO-ZnO system. The bulk rs-Co1-xZnxO, rs-Fe1…
The characteristics of shallow hydrogen-like muonium (Mu) states in nominally undoped ZnO and CdS (0001) crystals have been studied close to the surface at depths in the range of 10 nm - 180 nm by using low-energy muons, and in the bulk using conventional muSR. The muon implantation depths are adjusted by tuning the energy of the low-energy muons between 2.5 keV and 30 keV. We find that the bulk ionization energy of the shallow donor-like Mu state is lowered by about 10 meV at a depth of 100 nm, and continuously decreasing on approaching the surface. At a depth of about 10 nm the ionization en…
Bulk and thin films ZnO and TiO2 samples were doped with Sn by pulsed ion implantation and studied by means of X-ray photoelectron core-level and valence band spectroscopy as well as density functional theory calculations for comprehensive study of the incorporation of Sn. XPS spectral analysis showed that isovalent Sn cation substitution occurs in both zinc oxide (Sn2+ -> Zn2+) and titanium dioxide (Sn4+ -> Ti4+) for bulk and film morphologies. For TiO2 films, the implantation also led to occupation of interstitials by doped ions, which induced the clustering of substituted and embedded Sn at…
We report on low temperature photoluminescence (PL) and EPR study of bulk polycrystalline ZnO . Variation of peak position of donor bound exciton transition (D1XA) and FXAn=1-1LO with pump intensity show red shift and blue shift respectively due to exciton-exciton scattering. EPR spectra reveals three peaks at g value of 1.985, 1.956 and 1.939 respectively, g=1.956 and g=1.985 is due to shallow donors Zn interstitial and oxygen vacancy respectively An EPR spectrum at 100 K reveals higher degree of asymmetry and hyperfine splitting due to crystal field and inhomogeneous relaxation of paramagnet…
ZnO nanoparticles with Wurtzite structure were prepared by chemical methods at low temperature in aqueous solution. Nanoparticles are in the range from about 10 to 30 nm. Ferromagnetic properties were observed from 2 K to room temperature and above. Magnetization vs temperature, M(T) and isothermal measurements M(H) were determined. The coercive field clearly shows ferromagnetism above room temperature. The chemical synthesis, structural defects in the bulk related to oxygen vacancies are the main factors for the observed magnetic behavior. PACS numbers: 61.46.Hk Nanocrystals, 75.50.Pp Magneti…
The composites of strontium-doped lanthanum manganite (LSMO) with zinc oxide (ZnO) are candidate materials for energy harvesting by virtue of their magnetic and piezoelectric characteristics. They could be used to harvest energy from stray sources, such as the vibrations and electromagnetic noise from transformers and compressors within electrical grid power stations to power small diagnostic sensors, among other applications. The LSMO/ZnO nanocomposites were made by: (i) milling the two bulk powders and, (ii) a wet chemical process which resulted in core-shell structures. The electrical, piez…
In this paper we show that the ionic conduction through surface chemisorbed ambient moisture leads to the remarkably high room temperature selective response towards hydrogen gas. The surface adsorbed moisture acts as surface states and shows ionic conduction, as a result of smaller size of ZnO nanoparticles of 20 +/- 5 nm. This response is enhanced remarkably i.e. from 10% to 190% for 1200 ppm H2 gas when p-type NiO quasi-nanowires (width ~50 nm) are mixed with these n-type ZnO nanoparticles to form a homogenous NiO/ZnO nano-bulk p-n heterostructure. The maximum response is obtained for about…
The peculiar properties of zinc oxide (ZnO) make this material interesting for very different applications like light emitting diodes, lasers, and piezoelectric transducers. Most of these applications are based on epitaxial ZnO layers grown on suitable substrates, preferably bulk ZnO. Unfortunately the thermochemical properties of ZnO make the growth of single crystals difficult: the triple point 1975 deg C., 1.06 bar and the high oxygen fugacity at the melting point p_O2 = 0.35 bar lead to the prevailing opinion that ZnO crystals for technical applications can only be grown either by a hydrot…
First-principles calculations based on density functional theory have been carried out to understand the mechanism of fabricating As-doped p-type ZnO semiconductors. It has been confirmed that AsZn-2VZn complex is the most plausible acceptor among several candidates for p-type doping by computing the formation and ionization energies. The electronic band structures and atomic-projected density of states of AsZn-2VZn defect complex-contained ZnO bulks have been computed. The acceptor level in AsZn-2VZn band structure has found to be 0.12 eV, which is in good agreement with the experimental ioni…
We study the ferromagnetism in the compound (Zn,Mn)O within the Haldane-Anderson impurity model by using the quantum Monte Carlo technique and the tight-binding approximation for determining the host band-structure and the impurity-host hybridization. This computational approach allows us to determine how the host crystal structure influences the impurity bound state, which plays an important role in the development of the ferromagnetic (FM) correlations between the impurities. We find that the FM correlations are strongly influenced by the crystal structure. In particular, in p-type (Zn,Mn)O,…
To explore its structural and magnetic properties, the Heusler compound Co2Cr0.6Fe0.4Al was investigated using Moessbauer spectroscopy. The results of both transmission and conversion electron Moessbauer spectroscopy (CEMS) are analyzed to obtain insight into both the disorder effects as well as the differences between bulk and surface properties. It was found that mechanical treatment of the surfaces of bulk samples causes disorder and phase segregation, effects that should be taken into consideration when performing studies using surface-informative techniques. Results from bulk sample CEMS …
Relaxations at nonpolar surfaces of III-V compounds result from a competition between dehybridization and charge transfer. First principles calculations for the (110) and (10$\bar{1}$0) faces of zincblende and wurtzite AlN, GaN and InN reveal an anomalous behavior as compared with ordinary III-V semiconductors. Additional calculations for GaAs and ZnO suggest close analogies with the latter. We interpret our results in terms of the larger ionicity (charge asymmetry) and bonding strength (cohesive energy) in the nitrides with respect to other III-V compounds, both essentially due to the strong …
We calculate the shift current response, which has been identified as the dominant mechanism for the bulk photovoltaic effect, for the polar compounds LiAsS$_\text{2}$, LiAsSe$_\text{2}$, and NaAsSe$_\text{2}$. We find that the magnitudes of the photovoltaic responses in the visible range for these compounds exceed the maximum response obtained for BiFeO$_\text{3}$ by 10 - 20 times. We correlate the high shift current response with the existence of $p$ states at both the valence and conduction band edges, as well as the dispersion of these bands, while also showing that high polarization is no…
Commercially available gases contain residual impurities leading to a background oxygen partial pressure of typically several 10^{-6} bar, independent of temperature. This oxygen partial pressure is inappropriate for the growth of some single crystals where the desired oxidation state possesses a narrow stability field. Equilibrium thermodynamic calculations allow the determination of dynamic atmosphere compositions yielding such self adjusting and temperature dependent oxygen partial pressures, that crystals like ZnO, Ga2O3, or Fe{1-x}O can be grown from the melt.
This work reports about bulk-sensitive, high energy photoelectron spectroscopy from the valence band of CoTiSb excited by photons from 1.2 to 5 keV energy. The high energy photoelectron spectra were taken at the KMC-1 high energy beamline of BESSY II employing the recently developed Phoibos 225 HV analyser. The measurements show a good agreement to calculations of the electronic structure using the LDA scheme. It is shown that the high energy spectra reveal the bulk electronic structure better compared to low energy XPS spectra.
Ternary tetradymites Bi2Te2S, Bi2Te2Se and Bi2Se2Te are found to be stable, bulk topological insulators via theory, showing band inversion between group V and VI pz orbitals. We identify Bi2Se2Te as a good candidate to study massive Dirac Fermions, with a (111) cleavage-surface-derived Dirac point (DP) isolated in the bulk band gap at the Fermi energy Ef like Bi2Se3 but with a spin texture alterable by layer chemistry. In contrast, Bi2Te2S and Bi2Te2Se (111) behave like Bi2Te3, with a DP below Ef buried in bulk bands. Bi2Te2S offers large bulk resistivity needed for devices.
The Earth's crust is known to be depleted of gold, among other slightly heavy noble metals transported by magma from the Earth's mantle to the crust. The bulk silicate Earth (BSE) model also suggests significant depletion of Au in the silicate mantle itself, which cannot be explained by the amount of Au in the mantle's magma. This implies that Au could remain in the lower mantle and form stable compounds, especially with iron, which is the predominant element within the core. While Fe does not form binary compounds or a bulk alloy with Au under ambient conditions, it may do so at the elevated …
Using the hybrid exchange-correlation functional within the density-functional theory, we have systematically investigated the structural and electronic properties of MO (M = Be, Mg, Ca, Sr, Ba, Zn, Cd) in binary rocksalt (B1), zincblende (B3) and wurtzite (B4) phases, including the structural parameters, bulk moduli, band gaps and deformation potentials. Our results agree well with the experimental data and other theoretical results, and give a better understanding of the relationship between the geometric and electronic structure. After calculating the band alignment, we find that in both th…
Coherent super-high-frequency (SHF) vibrations provide an excellent tool for the modulation and control of excitations in semiconductors. Here, we investigate the piezoelectric generation and propagation of longitudinal bulk acoustic waves (LBAWs) with frequencies up to 20 GHz in GaAs crystals using bulk acoustic wave resonators (BAWRs) based on piezoelectric thin ZnO films. We show that the electro-acoustic conversion efficiency of the BAWRs depends sensitively on the sputtering conditions of the ZnO films. The BAWRs were then used for the study of the propagation properties of the LBAWs in G…
The rich electronic and band structures of monolayered crystals distinguished from their layered bulk counterparts offer versatile physical/chemical properties and applications.1-5 Their fabrications, particularly the top-down "exfoliations", are successful promised by the weak Van der Waals force between monolayers.6-9 Differentially, un-zipping ultra-thin crystals (e.g. with only one layer of crystal plane) from non-layered structures is highly challenging due to the strong chemical bond between planes and atoms. Alterative finely controlled growth of these ultra-thin materials is not really…
The electronic and magnetic properties of bulk and (1 1 1) surfaces for MP (M=K ans Rb) in rocksalt structure have been investigated by employing first-principle calculations. The results reveal that the compounds are half-metallic ferromagnets at the equilibrium lattice constants with large half-metallic band gaps of 0.46 and 0.74 eV. The (111) surfaces of KP and RbP keep their bulk half-metallic property. We study the stabilities of the bulk compounds and their (1 1 1) surfaces as well.
PbTaSe2 is a non-centrosymmetric topological semimetal. In this work we have explored the structural, elastic, mechanical, bonding, electronic, acoustic, thermal, and optical properties of PbTaSe2. The electronic bond structure calculations confirm semi-metallic character. Fermi surface topology shows both electron and hole sheets. The single crystal elastic constants reveal that PbTaSe2 is elastically stable. The compound is soft, brittle, and highly machinable at the same time. It also possesses very high level of dry lubricity. Various anisotropy indicators suggest that PbTaSe2 is elastical…
Using an ab-initio density functional theory based electronic structure method with a semi-local density approximation, we study thin-film electronic properties of two topological insulators based on ternary compounds of Tl (Thallium) and Bi (Bismuth). We consider TlBiX$_2$ (X=Se, Te) and Bi$_2$$X$_2$Y (X,Y= Se,Te) compounds which provide better Dirac cones, compared to the model binary compounds Bi$_2$X$_3$ (X=Se, Te). With this property in combination with a structurally perfect bulk crystal, the latter ternary compound has been found to have improved surface electronic transport in recent e…
Using a combined approach of spin-resolved photoemission spectroscopy, band structure and photoemission calculations we investigate the influence of bulk defects and surface states on the spin polarization of Co2Mn(alpha)Si thin films with bulk L21 order. We find that for Mn-poor alloys the spin polarization at EF is negative due to the presence of Co_Mn antisite and minority surface state contributions. In Mn-rich alloys, the suppression of Co(Mn) antisites leads to a positive spin polarization at the Fermi energy, and the influence of minority surface states on the photoelectron spin polariz…
The bulk photovoltaic effect (BPVE) is a phenomenon which creates a net electrical current from sunlight in a polar noncentrosymmetric material possessing a moderate band gap. This effect is being explored as an alternative to traditional pn-junction solar cells to convert solar energy into electricity. This paper assesses the possibility that hydrogenated Zintl-phase compounds consisting only of metal, metalloid, and hydrogen atoms, may be able to provide a BPVE response. Towards this end, the magnitude of the BPVE shift current is calculated for each of the compounds AeTrTtH (Ae = Ca, Sr, an…
The existence of two phases within one and the same hexagonal lattice of MgB2 compound, differing in Mg and B (in the homogeneity region) and especially in impurity oxygen content, as well as in microstructure, is demonstrated by various techniques. The regions corresponding to these two phases of MgB2 have the sizes of 100-500 μm, and they fill the whole bulk of specimens, alternating with each other. It is suggested that the two-phase state of MgB2 compound is caused by specific features of its formation mechanism (as a result of synthesis at 800-1000°C), including the stages of Mg melting, …
We propose new topological insulators in cerium filled skutterudite (FS) compounds based on ab initio calculations. We find that two compounds CeOs4As12 and CeOs4Sb12 are zero gap materials with band inversion between Os-d and Ce-f orbitals, which are thus parent compounds of two and three-dimensional topological insulators just like bulk HgTe. At low temperature, both compounds become topological Kondo insulators, which are Kondo insulators in the bulk, but have robust Dirac surface states on the boundary. This new family of topological insulators has two advantages compared to previous ones.…
Angle resolved photoemission spectroscopy (ARPES) studies were performed on two compounds (TlBiTe$_2$ and TlBiSe$_2$) from a recently proposed three dimensional topological insulator family in Thallium-based III-V-VI$_2$ ternary chalcogenides. For both materials, we show that the electronic band structures are in broad agreement with the $ab$ $initio$ calculations; by surveying over the entire surface Brillouin zone (BZ), we demonstrate that there is a single Dirac cone reside at the center of BZ, indicating its topological non-triviality. For TlBiSe$_2$, the observed Dirac point resides at th…
In this work we explore the compositions of non-stoichiometric intermediate phases formed by diffusion reactions: a mathematical framework is developed and tested against the specific case of Nb3Sn superconductors. In the first part, the governing equations for the bulk diffusion and inter-phase interface reactions during the growth of a compound are derived, numerical solutions to which give both the composition profile and growth rate of the compound layer. The analytic solutions are obtained with certain approximations made. In the second part, we explain an effect that the composition char…
We report the Se substitution effects on the crystal structure, superconducting properties, and valence states of self-doped BiCh2-based compound CeOBiS2-xSex. Polycrystalline CeOBiS2-xSex samples with x = 0-1.0 were synthesized. For x = 0.4 and 0.6, bulk superconducting transitions with a large shielding volume fraction were observed in magnetic susceptibility measurements; the highest transition temperature (Tc) was 3.0 K for x = 0.6. A superconductivity phase diagram of CeOBiS2-xSex was established based on Tc estimated from the electrical resistivity and magnetization measurements. The eme…
Structurally chiral materials hosting multifold fermions with large topological number have attracted considerable attention because of their naturally long surface Fermi arcs and bulk quantized circular photogalvanic effect (CPGE). Multifold fermions only appear in metallic states, and therefore, most studies so far have only focused on the semimetals in compounds with chiral crystal structures. In this work, we show that the structurally chiral topological trivial insulators are also exotic states, which is interesting from the application point of view, owing to their natural advantage to h…
Femtosecond laser excitations in half-metal (HM) compounds are theoretically predicted to induce an exotic picosecond spin dynamics. In particular, conversely to what is observed in conventional metals and semiconductors, the thermalization process in HMs leads to a long living partially thermalized configuration characterized by three Fermi--Dirac distributions for the minority, majority conduction and majority valence electrons respectively. Remarkably, these distributions have the same temperature but different chemical potentials. This unusual thermodynamics state causes a persistent non-e…
A first-principles calculation has been performed to study elastic, electronic, thermodynamic, transport and superconducting properties of recently reported osmium based two superconductors, XOsSi (X=Nb, Ta). We have calculated elastic constants and elastic moduli of XOsSi for the first time. The calculated values of bulk, Youngs, shear moduli are reasonably larger than the average value obtained from the rule of mixtures of the constituents. NbOsSi and TaOsSi both compounds are found to be relatively hard material, elastically stable and ductile in nature. The obtained directional bulk modulu…
We have obtained bulk samples of the graphite intercalation compound, CaC6, by a novel method of synthesis from highly oriented pyrolytic graphite. The crystal structure has been completely determined showing that it is the only member of the MC6, metal-graphite compounds, which has rhombohedral symmetry. We have clearly shown the occurrence of superconductivity in the bulk sample at 11.5K, using magnetization measurements.
BaFe2As2 (Ba-122) and (Ba0.6K0.4)Fe2As2 (K-doped Ba-122) powders were successfully synthesized from the elements using a reaction method, which incorporates a mechanochemical reaction using high-impact ball milling. Mechanically-activated, self-sustaining reactions (MSR) were observed while milling the elements together to form these compounds. After the MSR, the Ba-122 phase had formed, the powder had an average grain size < 1 μm, and the material was effectively mixed. X-ray diffraction confirmed Ba-122 was the primary phase present after milling. Heat treatment of the K-doped MSR powder at …
