Electrical and Spectroscopic Properties of SiC Detectors

Epitaxial electrical contact to graphene on SiC

Establishing good electrical contacts to nanoscale devices is a major issue for modern technology and contacting 2D materials is no exception to the rule. One-dimensional edge-contacts to graphene were recently shown to outperform surface contacts but the method remains difficult to scale up. We report a resist-free and scalable method to fabricate few graphene layers with electrical contacts in a single growth step. This method derives from the discovery reported here of the growth of few graphene layers on a metallic carbide by thermal annealing of a carbide forming metallic film on SiC in h…

Electrical evolution of W and WC Schottky contacts on 4H-SiC at different annealing temperatures

In this paper, we investigate the electrical evolution of tungsten (W) and tungsten carbide (WC) Schottky contacts on 4H-SiC subjected to thermal treatments at different annealing temperatures from 475 to 700 ° C. For each annealing temperature, the uniformity of the Schottky barrier height (${ϕ_B}$) and ideality factor (n) was monitored by current-voltage (I-V) measurements in forward bias, performed over sets of equivalent diodes. Good values of n (below 1.05) were found for both contacts up to thermal annealing at 700 ° C. On the other hand, the barrier of the two contacts behaves different…

Ohmic contacts on n-type and p-type cubic silicon carbide (3C-SiC) grown on silicon

This paper is a report on Ohmic contacts on n-type and p-type type cubic silicon carbide (3C-SiC) layers grown on silicon substrates. In particular, the morphological, electrical and structural properties of annealed Ni and Ti/Al/Ni contacts has been studied employing several characterization techniques. Ni films annealed at 950°C form Ohmic contacts on moderately n-type doped 3C-SiC (ND ~ 1x1017cm-3), with a specific contact resistance of 3.7x10-3 Ωcm2. The main phase formed upon annealing in this contact was nickel silicide (Ni2Si), with randomly dispersed carbon in the reacted layer. In the…

Temperature-dependent Fowler-Nordheim electron barrier height in SiO2/4H-SiC MOS capacitors

This paper reports on the physical and temperature-dependent electrical characterizations of the oxide/semiconductor interface in MOS capacitors with a SiO2 layer deposited on 4H-SiC using dichlorosilane and nitrogen-based vapor precursors. The capacitors, subjected to a standard post deposition annealing process in N2O, exhibited an interface state density Dit = 9.0 x 1011cm-2eV-1 below the conduction band edge. At room temperature, a barrier height (conduction band offset) of 2.8 eV was observed, along with the presence of negative charges in the insulator. The SiO2 insulating properties wer…

Formation of carbon interstitial-related defect levels by thermal injection of carbon into $n$-type 4$H$-SiC

Electrical properties of point defects in 4$H$-SiC have been studied extensively, but those related to carbon interstitials (C$_{i}$) have remained surprisingly elusive until now. Indeed, when introduced via ion irradiation or implantation, signatures related to C$_{i}$ observed by deep level transient spectroscopy (DLTS) tend to overlap with those of other primary defects, making the direct identification of C$_{i}$-related levels difficult. Recent literature has suggested to assign the so-called M center, often found in as-irradiated 4H-SiC, to charge state transitions of the C$_{i}$ defect …

NO退火持续时间对横向MOSFET中SiO2/4H-SiC界面特性的影响：近界面氧化物陷阱的能量分布

Impact of the NO annealing duration on the SiO2/4H-SiC interface properties in lateral MOSFETs: the energetic profile of the near-interface-oxide traps

本文通过TCAD能带仿真和横向MOSFET强反型电学测试，研究NO退火时间对SiO2/4H-SiC近界面氧化物陷阱能量分布及电荷俘获的影响。

4H-SiC中TS缺陷的实验性质研究

On the experimental properties of the TS defect in 4H-SiC

通过低温光致发光和深能级瞬态光谱技术，在单缺陷水平上揭示了4H-SiC中TS缺陷的光谱特征、晶体学取向、机械应变响应及0.6 eV电荷跃迁能级，为其未来鉴定奠定里程碑。

同型与异型SiC/Si异质结中测量协议与材料物理的分离：面向β伏特能量转换的计量驱动研究

Disentangling Measurement Protocol from Material Physics in Isotypic and Anisotypic SiC/Si Heterojunctions: A Metrology-Driven Study for Betavoltaic Energy Conversion

本研究通过计量驱动方法分离测量协议与材料物理，证明异型SiC/Si异质结在正确测量下具有更优的β伏特转换性能，提出四线开尔文传感框架。

Evaluation of silicon carbide as a divertor armor material in DIII-D H-mode discharges

Silicon carbide (SiC) represents a promising but largely untested plasma-facing material (PFM) for next-step fusion devices. In this work, an analytic mixed-material erosion model is developed by calculating the physical (via SDTrimSP) and chemical (via empirical scalings) sputtering yield from SiC, Si, and C. The Si content in the near-surface SiC layer is predicted to increase during D plasma bombardment due to more efficient physical and chemical sputtering of C relative to Si. Silicon erosion from SiC thereby occurs primarily from sputtering of the enriched Si layer, rather than directly f…

介电与压电氧化物中的电学退化：缺陷化学及相关表征技术综述

Electrical Degradation in Dielectric and Piezoelectric Oxides: Review of Defect Chemistry and Associated Characterization Techniques

本文综述了介电与压电氧化物中的电学退化问题，重点介绍了缺陷化学机制及分析缺陷与退化所需的光谱、显微和电子等关键表征技术。

完全处理的碳化硅功率MOSFETs中场效应刺激的界面点缺陷复合的时间门控光谱研究

Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs

本研究通过时间门控光谱技术，对完全处理的SiC功率MOSFETs中4H-SiC/SiO$_2$界面点缺陷的场效应刺激复合发光进行表征，提取出两种光谱成分，并基于量子力学模型将其中一种高能局部振动模式归因于碳团簇类缺陷的施主-受主对复合，为提升器件可靠性和性能提供了新见解。