On the origin of the premature breakdown of thermal oxide on 3C-SiC probed by electrical scanning probe microscopy

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

The origin of dielectric breakdown was studied on 4H-SiC MOSFETs that failed after three months of high temperature reverse bias (HTRB) stress. A local inspection of the failed devices demonstrated the presence of a threading dislocation (TD) at the breakdown location. The nanoscale origin of the dielectric breakdown was highlighted with advanced high-spatial-resolution scanning probe microscopy (SPM) techniques. In particular, SPM revealed the conductive nature of the TD and a local increase of the minority carrier concentration close to the defect. Numerical simulations estimated a hole conc…

200°C下正、负栅偏压及栅电流应力作用时4H-SiC功率MOSFET中的时间相关介质击穿

Time Dependent Dielectric Breakdown in 4H-SiC power MOSFETs under positive and negative gate-bias and gate-current stresses at 200°C

本文围绕4H-SiC功率MOSFET的栅氧可靠性，介绍在恒定栅偏压应力下通过监测TDDB评估栅氧化层寿命的常规方法。

Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress

In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the f…

用于提升击穿电压的 RESURF SiC 上 Ga$_2$O$_3$ 场效应晶体管

RESURF Ga$_{2}$O$_{3}$-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

提出将 p 型 SiC 散热异质衬底用作 Ga$_2$O$_3$ 横向 FET 的 RESURF 结构，并通过 TCAD 仿真优化掺杂与尺寸、分析界面影响，验证其提升击穿电压和高频开关的潜力。

Modeling of Radiation-Induced Defect Recovery in 3C-SiC Under High Field Bias Conditions

In this work, the implications of high field bias conditions in radiation-induced defect recovery in 3C-SiC crystals is studied. It is well known that transient heating effects (or thermal spikes) occur when energetic swift heavy ions (SHIs) deposit energy to the surrounding medium via ionization. Here, we explore the dynamics of this transient event under high background electric fields in 3C-SiC, which is what occurs when an ion strike coincides with field-sensitive volumes. In this study, we use the Ensemble Monte Carlo method to quantify how the energy deposition of the ionized regions cha…

Wafer-scale Heterogeneous Integration of Monocrystalline \b{eta}-Ga2O3 Thin Films on SiC for Thermal Management by Ion-Cutting Technique

The ultra-wide bandgap, high breakdown electric field, and large-area affordable substrates make \b{eta}-Ga2O3 promising for applications of next-generation power electronics while its thermal conductivity is at least one order of magnitude lower than other wide/ultrawide bandgap semiconductors. To avoid the degradation of device performance and reliability induced by the localized Joule-heating, aggressive thermal management strategies are essential, especially for high-power high-frequency applications. This work reports a scalable thermal management strategy to heterogeneously integrate waf…