纳米尺度下功率MOSFET在极长高温reverse bias应力下击穿的根源
Nanoscale insights on the origin of the Power MOSFETs breakdown after extremely long high temperature reverse bias stress
摘要：
在这项工作中，4 H-SiC功率MOSFET的介电击穿的起源是在纳米尺度上研究的，分析了在极长时间（三个月）的高温反向偏置（HTRB）应力后失败的器件。击穿事件的位置和通过外延层传播的线位错之间的一一对应关系被发现。扫描探针显微镜（SPM）揭示了线位错的导电性质和少数载流子浓度的局部修改。根据这些结果，可以阐明穿透位错在4 H-SiC MOSFET失效中的作用。
英文摘要：
In this work, the origin of the dielectric breakdown of 4H-SiC power MOSFETs was studied at the nanoscale, analyzing devices that failed after extremely long (three months) of high temperature reverse bias (HTRB) stress. A one-to-one correspondence between the location of the breakdown event and a threading dislocation propagating through the epitaxial layer was found. Scanning probe microscopy (SPM) revealed the conductive nature of the threading dislocation and a local modification of the minority carriers concentration. Basing on these results, the role of the threading dislocation on the failure of 4H-SiC MOSFETs could be clarified.
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