发表机构
Samara State Technical University（萨马拉国立技术大学）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过计量驱动方法分离测量协议与材料物理，证明异型SiC/Si异质结在正确测量下具有更优的β伏特转换性能，提出四线开尔文传感框架。
AI 中文摘要
我们使用开尔文探针力显微镜、扫描隧道谱、配备Keithley 2450源表的精密电学测量以及0.1法拉超级电容器电荷存储测试，对同型（n-SiC/n-Si）和异型（n-SiC/p-Si）异质结进行了比较。两线探测显示同型结构中低偏置电流增强；四线开尔文传感消除了外部引线和接触的电压降贡献，将该电流降低至更低的体相和界面限制水平。KPFM和STS检测到的高密度界面态（在富位错区域高达每平方厘米每电子伏特5×10^12）为增强的局部响应提供了合理起源。异型结表现出真正的二极管状电流-电压特性，在β辐照下开路电压约为1.2伏。在使用专利电荷泵转换器的电容器测试中，30分钟后异型结构达到0.25伏，而同型结构仅为0.05伏，能量比约为25。我们构建了一个基于四线开尔文传感、发电机极性（阴极接LO）和高阻抗输出关闭状态的测量-解释框架。我们的结果表明，在正确测量时，异型SiC/Si异质结是β伏特转换的首选平台。
英文摘要
We compare isotypic (n-SiC/n-Si) and anisotypic (n-SiC/p-Si) heterojunctions using Kelvin probe force microscopy, scanning tunnelling spectroscopy, precision electrical measurements with a Keithley 2450 SourceMeter, and a 0.1 farad supercapacitor charge-storage test. Two-wire probing shows an enhanced low-bias current in the isotypic structures; four-wire Kelvin sensing removes the voltage-drop contribution of external leads and contacts and collapses this current to a much lower bulk and interface limited level. The high density of interface states detected by KPFM and STS, up to five times ten to the twelfth per square centimetre per electronvolt in dislocation-rich regions, provides a plausible origin for the enhanced local response. Anisotypic junctions exhibit a genuine diode-like current-voltage characteristic and an open-circuit voltage of about 1.2 volts under beta irradiation. In the capacitor test with the patented charge-pump converter, the anisotypic structure reaches 0.25 volts versus 0.05 volts for the isotypic one after 30 minutes, giving an energy ratio of about 25. We formulate a measurement-interpretation framework based on four-wire Kelvin sensing, generator polarity with cathode to LO, and high-impedance output-off state. Our results show that anisotypic SiC/Si heterojunctions are the preferred platform for betavoltaic conversion when measured correctly.
