We have constructed an analytic formula to treat the perpendicular magnetic anisotropy energy in ferromagnetic metals with low symmetry, such as C4V and C3V. We find that the anisotropy energy is proportional to a part of the expectation values of the orbital angular momentum and magnetic dipole operator. Although the result is similar to the model proposed by Laan [J. Phys.: Condens. Matter 10, 3239 (1998)], we have derived a concrete expression for the spin-flip virtual excitation process term, which can be dominant in atoms with small magnetic moments and/or small exchange splitting. Pt monatomic layer with proximity-induced spin polarization grown on Fe is an example of this. Other multilayer systems such as Co/Pd and Co/Ni and bilayer systems such as Fe(CoB)/MgO can be discussed similarly. Moreover, the relation between perpendicular magnetic anisotropy energy and measurable physical parameters is discussed based on X-ray magnetic circular dichroism spectroscopy.
Perpendicular magnetic anisotropy was found to be highly sensitive to the nominal thickness and morphology of laterally heterogeneous CoPd films in the vicinity of the metal insulator transition. We used the effect to tune the anisotropy by the width of lithographically patterned stripes with non-uniform cross-sectional thickness profiles. The phenomenon and the method can be suitable to control the local anisotropy of spintronic logic circuitry elements by their shape and lateral dimensions.
Second and fourth order anisotropy dependence of energy of thick simple cubic ferromagnetic films with 10000 layers is explained using Heisenberg Hamiltonian with second order perturbation in this manuscript. The second and fourth order anisotropy constants were assumed to be constants through out the film. When the fourth order anisotropy is given by fourth order anisotropy of 6, the sc(001) ferromagnetic thick films with 10000 layers can be easily oriented in 0.6 radians direction for the energy parameters given this report. Under the influence of the second order anisotropy given by second …
Controlling the magnetic anisotropy of ferromagnetic materials plays a key role in magnetic switching devices and spintronic applications. Examples of spin-orbit torque devices with different magnetic anisotropy geometries (in-plane or out-of-plane directions) have been demonstrated with novel magnetization switching mechanisms for extended device functionalities. Normally, the intrinsic magnetic anisotropy in ferromagnetic materials is unchanged within a fixed direction, and thus, it is difficult to realize multifunctionality devices. Therefore, continuous modulation of magnetic anisotropy in…
Heisenberg Hamiltonian was employed to describe the variation of energy of thick ferromagnetic films with second and fourth order anisotropies. At angle of 1.36 degrees and anisotropies of 1.25, energy is minimum for thick film of sc(001) with 1000 layers. Energy becomes minimum at angle of 1.18 degrees and fourth order anisotropy of 1.15 for thick film of bcc(001) with the same thickness. According to these simulations, these lattices can be easily oriented in some certain directions under the influence of some particular values of anisotropies. Energy varies with second and fourth order anis…
We investigate the dynamic magnetic response of ferromagnetic flexible NiFe/Ta and FeCuNbSiB/Ta multilayers under external stress. We explore the possibility of handling magnetic anisotropy and dynamic magnetic response of flexible magnetostrictive nanostructures. We quantify the sensitivity of the multilayers under external stress by calculating the ratio $|Δ\textrm{MI}|/|Δ\barσ|$ and show that considerable values can be reached by tuning the magnetic field, frequency, magnetostriction constant, and external stress. The results reveal possibilities of application of flexible magnetostrictive …
Two-dimensional magnets have received increasing attention since Cr2Ge2Te6 and CrI3 were experimentally exfoliated and measured in 2017. Although layered ferromagnetic metals were demonstrated at room temperature, a layered ferromagnetic semiconductor with high Curie temperature (Tc) is yet to be unveiled. Here, we theoretically predicted a family of high Tc ferromagnetic monolayers, namely MnNX and CrCX (X=Cl, Br and I; C=S, Se and Te). Their Tc values were predicted from over 100 K to near 500 K with Monte Carlo simulations using an anisotropic Heisenberg model. Eight members among them show…
We demonstrate the pumping of phonons by ferromagnetic resonance in a series of [Co(0.8 nm)/Pd(1.5 nm)]$_n$ multilayers ($n =$ 6, 11, 15, and 20) with large magnetostriction and perpendicular magnetic anisotropy. The effect is shown using broadband ferromagnetic resonance over a range of temperatures (10 to 300 K), where a resonant damping enhancement is observed at frequencies corresponding to standing wave phonons across the multilayer. The strength of this effect is enhanced by approximately a factor of 4 at 10 K compared to room temperature, which is anomalous in the sense that the tempera…
We study the properties of composite free layers with perpendicular anisotropy. The free layers are made of a soft FeCoB layer ferromagnetically coupled by a variable spacer (Ta, W, Mo) to a very anisotropic [Co/Ni] multilayer embodied in a magnetic tunnel junction meant for spin torque memory applications. For this we use broadband ferromagnetic resonance to follow the field dependence of the acoustical and optical excitation of the composite free layer in both in-plane and out-of-plane applied fields. The modeling provides the interlayer exchange coupling, the anisotropies and the damping fa…
We present high-temperature ferromagnetism and large magnetic anisotropy in heavily Fe-doped n-type ferromagnetic semiconductor (In1-x,Fex)Sb (x = 20 - 35%) thin films grown by low-temperature molecular beam epitaxy. The (In1-x,Fex)Sb thin films with x = 20 - 35% maintain the zinc-blende crystal and band structure with single-phase ferromagnetism. The Curie temperature (TC) of (In1-x,Fex)Sb reaches 390 K at x = 35%, which is significantly higher than room temperature and the highest value so far reported in III-V based ferromagnetic semiconductors. Moreover, large coercive force (HC = 160 Oe) …
The dynamics of magnetic domain walls along ferromagnetic strips with spatially modulated perpendicular magnetic anisotropy is theoretically studied by means of micromagnetic simulations. Ferromagnetic layers with a periodic sawtooth profile of the anisotropy depict a well-defined set of energy minima where the walls are pinned in the absence of external stimuli, and favor the unidirectional propagation of domain walls. The performance of the current-driven domain wall motion along these ratchet-like systems is compared to the field-driven case. Our study indicates that the current-driven doma…
The recent observation of ferromagnetic order in two-dimensional (2D) materials has initiated a booming interest in the subject of 2D magnetism. In contrast to bulk materials, 2D materials can only exhibit magnetic order in the presence of magnetic anisotropy. In the present work we have used the Computational 2D Materials Database (C2DB) to search for new ferromagnetic 2D materials using the spinwave gap as a simple descriptor that accounts for the role of magnetic anisotropy. In addition to known compounds we find 12 novel insulating materials that exhibit magnetic order at finite temperatur…
We demonstrate that in-plane charge current can effectively control the spin precession resonance in an Al2O3/CoFeB/Ta heterostructure. Brillouin Light Scattering (BLS) was used to detect the ferromagnetic resonance field under microwave excitation of spin waves at fixed frequencies. The current control of spin precession resonance originates from modification of the in-plane uniaxial magnetic anisotropy field H_k, which changes symmetrically with respect to the current direction. Numerical simulation suggests that the anisotropic stress introduced by Joule heating plays an important role in c…
Ferromagnetic resonance study of free hole contribution to magnetization and magnetic anisotropy in modulation-doped Ga$_{1 - x}$Mn$_{x}$As/Ga$_{1 - y}$Al$_{y}$As:Be
An alternate method of measuring anisotropy fields in thin film ferromagnets is demonstrated. The method relies on the magnetic susceptibility in a small a.c. magnetic field, measured \txtit{in situ} using the magneto-optic Kerr effect (MOKE), and will be useful in situations where more specialized apparatus are not available, or constraints discourage the use of a large, static magnetic field. The method is demonstrated for Co/W(110) films, where it yields anisotropy fields in agreement with previous studies using more conventional torque magnetometry. The sensitivity of the method is demonst…
All the simulations were carried out for sc(001) film with three (N=3) layers. The effect of applied magnetic field and stress induced anisotropy on energy of ultra-thin ferromagnetic films has been investigated using Heisenberg Hamiltonian with second order perturbation. The energy becomes minimums at certain values of angles, applied magnetic field and stress, by indicating that film can be easily oriented in theses certain directions by applying particular applied magnetic field or stress. For example, when applied magnetic field perpendicular to film plane is 3.6, the film can be easily or…
Exploring magnetic anisotropy in bcc-structured ferromagnetic thin films with three spin layers using the fourth order perturbed Heisenberg Hamiltonian
Among the recently widely studied van der Waals layered magnets CrX3 (X=Cl, Br, I), CrCl3 monolayer (ML) is particularly puzzling as it is solely shown by experiments to have an in-plane magnetic easy axis and, furthermore, all of previous first-principles calculation results contradict this. Through systematical first-principles calculations,we unveil that its in-plane shape anisotropy that dominates over its weak perpendicular magnetocrystalline anisotropy is responsible for the in-plane magnetic easy axis of CrCl3 ML. To tune the in-plane ferromagnetism of CrCl3 ML into the desirable perpen…
Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting the paramagnetic molecules across two ferromagnets (FM) electrodes of a magnetic tunnel junction (MTJ). MTJMSD provides opportunities to connect FM electrodes of a vast range of anisotropy properties to a variety of molecules of length scale. Our prior studies showed that the paramagnetic molecules can produce strong antiferromagnetic coupling with FM electrodes. The device properties of MTJMSD depend upon various factors such as anisotropy, spin fluctuation, thermal energy, etc. In thi…
We report switching of magnetic anisotropy (MA) from in-plane to perpendicular with increasing the thickness d of a (001)-oriented ferromagnetic-semiconductor (FMS) (Ga0.7,Fe0.3)Sb layer with a high Curie temperature (Tc > 320 K), using ferromagnetic resonance at room temperature. We show that the total MA energy (E) along the [001] direction changes its sign from positive (in-plane) to negative (perpendicular) with increasing d above an effective critical value \mathrm{d}_\mathrm{C}^\mathrm{*}\ ~ 42 nm. We reveal that (Ga,Fe)Sb has two-fold symmetry in the film plane. Meanwhile, in the plane …
Understanding and controlling the interfacial magnetic properties of ferromagnetic thin films are crucial for spintronic device applications. However, using conventional magnetometry, it is difficult to detect them separately from the bulk properties. Here, by utilizing tunneling anisotropic magnetoresistance in a single-barrier heterostructure composed of La0.6Sr0.4MnO3 (LSMO)/ LaAlO3 (LAO)/ Nb-doped SrTiO3 (001), we reveal the presence of a peculiar strong two-fold magnetic anisotropy (MA) along the [110]c direction at the LSMO/LAO interface, which is not observed in bulk LSMO. This MA shows…
We study the tunnel magnetoresistance (TMR) effect and magnetocrystalline anisotropy in a series of magnetic tunnel junctions (MTJs) with $L1_1$-ordered fcc ferromagnetic alloys and MgO barrier along the [111] direction. Considering the (111)-oriented MTJs with different $L1_1$ alloys, we calculate their TMR ratios and magnetocrystalline anisotropies on the basis of the first-principles calculations. The analysis shows that the MTJs with Co-based alloys (CoNi, CoPt, and CoPd) have high TMR ratios over 2000$\%$. These MTJs have energetically favored Co-O interfaces where interfacial antibonding…
The attainability of modification of the apparent magnetic anisotropy in (III,Mn)V ferromagnetic semiconductors is probed by means of the finite-elements-based modelling. The most representative case of (Ga,Mn)As and its in-plane uniaxial anisotropy is investigated. The hysteresis loops of the continuous films of a ferromagnetic semiconductor as well as films structured with the elliptic antidots are modelled for various eccentricity, orientation, and separation of the anti dots. The effect of anti-dots on the magnetic anisotropy is confirmed but overall is found to be very weak. The subsequen…
Thin garnet films are becoming central for magnon-spintronics and spin-orbitronics devices as they show versatile magnetic properties together with low magnetic losses. These fields would benefit from materials in which heat does not affect the magnetization dynamics, an effect known as the non-linear thermal frequency shift. In this study, low damping Bi substituted Iron garnet (Bi:YIG) ultra-thin films have been grown using Pulsed Laser Deposition. Through a fine tuning of the growth parameters, the precise control of the perpendicular magnetic anisotropy allows to achieve a full compensatio…
The large curvature effects on micromagnetic energy of a thin ferromagnetic film with nonlocal dipolar energy are considered. We predict that the dipolar interaction and surface curvature can produce perpendicular anisotropy which can be controlled by engineering a special type of periodic surface shape structure. Similar effects can be achieved by a significant surface roughness in the film. We show that in general the anisotropy can point in an arbitrary direction depending on the surface curvature. We provide simple examples of these periodic surface structures to demonstrate how to enginee…
Planar array of self-assembled Ga$_{x}$Fe$_{4-x}$N nanocrystals in GaN: Magnetic anisotropy determined via ferromagnetic resonance
用铁磁共振方法研究了镶嵌在GAN基质中的$_{x}$ Fe $_{4-x}$ N纳米晶平面阵列的磁各向异性。采用X射线衍射和透射电子显微镜来确定纳米晶体的相和分布。的磁各向异性被发现主要是单轴的难磁化轴垂直于NC平面，并有一个很弱的面内六角对称。考虑到纳米晶体的形态，外延关系，应变效应和纳米之间的磁耦合的起源的磁各向异性进行了讨论。
(Dated: August 3, 2018) The new method of numerical analysis of experimental ferromagnetic resonance (FMR) spectra in thin films is developed and applied to (Ga,Mn)As thin films. Specifically, it starts with the finding of numerical solutions of Smit-Beljers (SB) equation and continues with their subsequent statistical analysis within the cross-validation (CV) approach taken from machine learning techniques. As a result of this treatment, we are able to reinterpret the available FMR experimental results in diluted ferromagnetic semiconductor (Ga,Mn)As thin films with the resulting determinatio…
Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, has attracted a great deal of interest recently owing to its potential for integration with Dirac materials to realize the quantum anomalous Hall effect (QAHE) and to develop novel spintronics devices. Here, we study the uniaxial magnetic anisotropy energy of single-crystalline CGT and determine that the magnetic easy axis is directed along the c-axis in its ferromagnetic phase. In addition, CGT is an insulator below the Curie temperature. These properties make CGT a potentially promising candidate substrate for integration with topological i…
We present a thorough study on the magnetoanisotropic properties and magnetocaloric effect in the layered ferromagnetic Cr$_4$Te$_5$ single crystals by performing the critical behaviour analysis of magnetization isotherms. The critical exponents $β$=0.485(3), $γ$=1.202(5), and $δ$=3.52(3) with a Curie temperature of $T_C \approx 340.73(4)$ K are determined by the modified Arrott plots. We observe a large magnetocrystalline anisotropy K$_u$=330 kJ/$m^3$ at 3 K which gradually decreases with increasing temperature. Maximum entropy change -$ΔS_{M}^{max}$ and the relative cooling power (RCP) are f…
Inspired by the successful synthesis of two-dimensional (2D) V-based Janus dichloride monolayers with intrinsic ferromagnetism and high Curie temperature (T$_{c}$), the electronic structure, spin-valley splitting and magnetic anisotropy of Janus 2H-VSeS monolayers are investigated in detailed using first-principles calculations. The results show that the Janus 2H-VSeS monolayer exhibits a large valley splitting of 105meV, high T$_{c}$ of 278K and good magnetocrystalline anisotropy (0.31meV) contributed by the in-plane d$_{x^{2}-y^{2}}$/d$_{xy}$ orbitals of V atoms. The biaxial strain ($-$8%<$\…
Magnetic properties of exchange biased and of unbiased oxide/permalloy thin layers: a ferromagnetic resonance and Brillouin scattering study
微带铁磁共振和布里渊散射是用来提供一个比较确定薄坡莫合金层的磁性参数与非磁性（Al 2 O 3）或与反铁磁氧化物（NiO）。结果表明，垂直各向异性监测的界面表面能项，这是实际上独立的界面的性质。在厚度（5-25 nm）的调查间隔的饱和磁化强度没有显着不同，从报告的散装坡莫合金。面内单轴各向异性和交换偏置各向异性也来自于动态磁激发的研究，并与我们使用常规磁力测量的独立评估进行了比较
Anisotropic magnetoresistance (AMR) of Cr2Ge2Te6 (CGT), a layered ferromagnetic insulator, is investigated under an applied hydrostatic pressure up to 2 GPa. The easy axis direction of the magnetization is inferred from the AMR saturation feature in the presence and absence of the applied pressure. At zero applied pressure, the easy axis is along the c-direction or perpendicular to the layer. Upon application of a hydrostatic pressure>1 GPa, the uniaxial anisotropy switches to easy-plane anisotropy which drives the equilibrium magnetization from the c-axis to the ab-plane at zero magnetic fiel…
A recent experimental study (Phys. Rev. Appl. 9, 024023, 2018) on paramagnetic CeCo$_3$ finds that Magnesium alloying induces a ferromagnetic transition with intrinsic properties large enough for permanent magnet applications. Here we explain these surprising results \textit{via} a first principles study of the electronic structure and magnetism of Magnesium-alloyed CeCo$_3$. We find the origin of this Magnesium-induced ferromagnetic transition to be Stoner physics - the substantial increase in the Fermi-level density-of-states $N(E_F)$ with Mg alloying. Our calculations suggest that both Ce a…
We report the electromotive force (EMF) properties generated in 3d-transition ferromagnetic metal (FM = Fe, Co, and Ni80Fe20) films themselves under their ferromagnetic resonance (FMR). For Fe and Co films, the EMF due to the anomalous-Hall effect is dominantly generated under their FMR. Meanwhile, for a Ni80Fe20 film, the EMF due to the inverse spin-Hall effect in the Ni80Fe20 film itself under the FMR is mainly generated. This tendency is qualitatively explained with differences of the spin polarization, the spin Hall conductivity, the anomalous Hall conductivity, the magnetization saturatio…
