Ge1-xMn xTe/PbTe //KCl（001）铁磁半导体层中晶体畸变引起的磁各向异性
Magnetic anisotropy induced by crystal distortion in Ge1-xMn xTe/PbTe//KCl (001) ferromagnetic semiconductor layers
摘要：
用铁磁共振（FMR）方法研究了用分子束外延（MBE）方法在KCl（001）衬底上生长的Ⅳ-Ⅵ族稀磁半导体Ge_（1-x）Mn_xTe（x=0.14）薄膜的磁各向异性。的FMR共振场的角度依赖性的分析表明，易磁化轴位于附近的层平面的法线，并控制由两个晶体畸变存在于这些菱形Ge 1-xMnxTe层：铁电畸变与阳离子和阴离子子晶格沿[111]晶体方向和双轴面内的相对移位，由于热失配的压缩应变。
英文摘要：
Ferromagnetic resonance (FMR) study of magnetic anisotropy is presented for thin layers of IV-VI diluted magnetic semiconductor Ge1-xMn xTe with x=0.14 grown by molecular beam epitaxy (MBE) on KCl (001) substrate with a thin PbTe buffer. Analysis of the angular dependence of the FMR resonant field reveals that an easy magnetization axis is located near to the normal to the layer plane and is controlled by two crystal distortions present in these rhombohedral Ge1-xMnxTe layers: the ferroelectric distortion with the relative shift of cation and anion sub-lattices along the [111] crystal direction and the biaxial in-plane, compressive strain due to thermal mismatch.
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