Carrier Selective (CS) Silicon solar cells are increasingly explored as a low cost alternative to PN junction Silicon solar cells. While the recent trends on power conversion efficiency are encouraging, the temperature coefficient and hence the power output under elevated temperatures are not well explored for such solar cells. Here, we address this issue through detailed numerical simulations to explore the influence of interface and material parameters on the temperature coefficient. Our results indicate that irrespective of the interface quality, the temperature coefficient of CS solar cells improves with an increase in band discontinuities. Interestingly, contrary to the trends related to efficiency, our results indicate that the temperature coefficient of CS solar cells is more critically affected by the interface quality of the minority carrier extraction layer than the majority carrier extraction layer. These insights have important implications towards the choice of optimal material and processing conditions for Si based CS solar cells.
Ultra-Slow Dynamic Annealing of Neutron-induced Defects in n-type Silicon: Role of Charge Carriers
用等注量（1 $\times$ 10 $^{10}$ cm $^{-2}$）和不同注量（$2.5\times$ 10 $^5$ cm $^{-2}$ s $^{-1}$至$1\times$ 10 $^7$ cm $^{-2}$ s $^{-1}$）的中子轰击三种以n型硅为有源区的双极器件。基电流和输入偏置电流的测量值的增加被发现随中子通量的增加而减少，这意味着n型硅中双空位缺陷的动态退火的强度遵循正的通量依赖性。这种通量依赖性与使用质子的离子注入中观察到的通量依赖性相同，但是在我们的实验中明显的通量灵敏度比质子轰击的通量灵敏度低4个数量级，尽管两种粒子的质量和能量相似。质子轰击中大量的载流子的存在，提高了Si材料的扩散速度和缺陷团簇的解离速率，加速了缺陷的动态退火，从而导致了质子轰击过程中的通量范围的巨大差异。我们的工作将有助于理解硅中的缺陷退火过程。
A Comprehensive Study of Charge-Carrier Mobility in Double Lateral-Gate Silicon Junctionless Transistors
Laye Rooyan Part, Isfahan Science and Technology Town（拉耶鲁扬部分，伊斯法罕科技城）；Department of Physics, Isfahan University of Technology（伊斯法罕理工大学物理系）；Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia（马来西亚国立大学微工程与纳米电子研究所）；Department of Electrical and Computer Engineering, University of Texas at Dallas（德克萨斯大学达拉斯分校电气与计算机工程系）
Thermodynamics of the mono-energetic energy selective Contacts of the hot carrier solar cell
热载流子太阳能电池（HCSC）具有将太阳能转化为电化学能的潜力，其效率为85.4%。为此，除了理想化的光吸收器之外，HCSC必须通过所谓的\emph{mono-energetic energy selective contacts}（ESC）连接到外部负载。然而，这些类型的接触必须表现出的热力学性质，例如它们的导电性、导热性和塞贝克系数，还没有被探索。本文旨在填补这一空白。在这方面，我们的模型电子输运在非理想的ESC使用的传输理论提出的Datta和Landauer，这使我们能够计算这些参数的值作为一个函数的温度和操作的电化学电位。我们的研究结果还表明，为了保持HCSC效率高于82%，ESC可能需要大约$3 \times 10^{19}$ cm $^{-3}$电子态。当ESC偏离理想状态时，获得最佳效率的热载流子温度增加到2540 K以上。以最高能量为特征的单能量选择性接触需要电导率、热导率和塞贝克系数，当它们组合时，其特征在于高热电优值$(ZT\approx 8)$。据我们所知，并无任何资料显示这一品质因数，说明在实践高成本供应链概念方面存在困难。相反，我们的工作支持这样的想法，即追求能够通过单能电子通道弹道传输电子的材料可以提供实现高$ZT$材料的关键
Analysis of two-terminal perovskite/silicon tandem solar cells with differing texture structure, perovskite carrier lifetime and tunneling junction quality
