基于模型的硅基太阳电池最佳载流子选择材料筛选
Modeling based screening for optimal carrier selective material for Si based solar cells
摘要：
载流子选择性（CS）硅太阳能电池越来越多地使用各种不同的材料来开发。然而，这种CS材料的最佳性能还没有得到很好的理解。在这种情况下，通过详细的分析和数值模拟，在这里，我们提供了几个有趣的见解与CS材料性能的效率权衡。首先，我们表明，完美的能带对齐是一个理想的功能，只有当接口是没有任何陷阱状态。另外，约0.2eV-0.4eV的能带偏移提供足够的能带弯曲以减少界面复合的影响，从而改善性能。令人惊讶的是，发现少数载流子提取层的界面钝化质量远低于多数载流子提取层的要求。此外，CS层的掺杂密度和介电常数对太阳能电池性能具有与能带偏移类似的影响。我们的研究结果对选择合适的材料作为载流子选择层具有明显的意义，因此受到社会的广泛关注。
英文摘要：
Carrier selective (CS) silicon solar cells are increasingly explored using a variety of different materials. However, the optimum properties of such CS materials are not well understood. In this context, through detailed analytical and numerical modeling, here we provide several interesting insights on the efficiency tradeoff with CS material properties. First, we show that perfect band alignment is a desirable feature only if the interface is devoid of any trap states. Otherwise, a band offset of around 0.2eV-0.4eV provides sufficient band bending to reduce the effect of interface recombination, thus improving the performance. Surprisingly, the interface passivation quality for the minority carrier extraction layer is found to be far less demanding than that for the majority carrier extraction layer. Additionally, doping density and dielectric constant of CS layers have a similar effect as band offset on solar cell performance. Our results have obvious implications toward the selection of appropriate materials as carrier selective layers and hence are of broad interest to the community.
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