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arXiv 1710.07090cond-mat.mtrl-sci
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关于MgSiN $_{2}$的热膨胀

On the thermal expansion in MgSiN$_{2}$

Mikael Råsander, Michelle A. Moram

摘要:

采用密度泛函方法结合准谐波近似计算了宽禁带半导体MgSiN $_{2}$的热膨胀。我们发现,热膨胀是相当小的与以前的实验研究。然而,目前的计算表明,该系统的热膨胀是更各向同性。另外的热力学性质,如Gr{ü}neisen参数和在恒定压力下的热容量也已确定,并发现与现有的实验是很好的协议。

英文摘要:

The thermal expansion of the wide band gap semiconductor MgSiN$_{2}$ has been determined using density functional calculations in combination with the quasi-harmonic approximation. We find that the thermal expansion is rather small in good agreement with previous experimental studies. However, the present calculations suggest that the thermal expansion of the system is more isotropic. Additional thermodynamic properties such as the Gr{ü}neisen parameter and the heat capacity at constant pressure have also been determined and found to be in good agreement with available experiments.

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