We theoretically investigate electron spin operations driven by applied electric fields in a semiconductor double quantum dot (DQD). Our model describes a DQD formed in semiconductor nanowire with longitudinal potential modulated by local gating. The eigenstates for two electron occupation, including spin-orbit interaction, are calculated and then used to construct a model for the charge transport cycle in the DQD taking into account the spatial dependence and spin mixing of states. The dynamics of the system is simulated aiming at implementing protocols for qubit operations, that is, controlled transitions between the singlet and triplet states. In order to obtain fast spin manipulation, the dynamics is carried out taking advantage of the anticrossings of energy levels introduced by the spin-orbit and interdot couplings. The theory of optimal quantum control is invoked to find the specific electric-field driving that performs qubit logical operations. We demonstrate that it is possible to perform within high efficiency a universal set of quantum gates $\{$CNOT, H$\otimes$I, I$\otimes$H, T$\otimes$I, and T$\otimes$I$\}$, where H is the Hadamard gate, T is the $π/8$ gate, and I is the identity, even in the presence of a fast charge transport cycle and charge noise effects.
We propose a two-qubit optically controlled phase gate in quantum dot molecules via adiabatic passage and hole tunneling. Our proposal combines the merits of the current generation of vertically stacked self-assembled InAs quantum dots and adiabatic passage. The simulation shows an implementation of the gate with a fidelity exceeding 0.98.
The three-electron configuration of gate-defined double quantum dots encodes a promising qubit for quantum information processing. I propose a two-qubit entangling gate using a pulse-gated manipulation procedure. The requirements for high-fidelity entangling operations are equivalent to the requirements for the pulse-gated single-qubit manipulations that have been successfully realized for Si QDs. This two-qubit gate completes the universal set of all-pulse-gated operations for the three-electron double-dot qubit and paves the way for a scalable setup to achieve quantum computation.
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is used for charge sensing. The quantum dot transport channel can support either a single or a double quantum dot. We demonstrate few-electron occupation in a single quantum dot and extract charging energies as large as 6.6 meV. Magnetospectroscopy is used to measure valley splittings in the range of 35-70 microeV. By energizing two additional gates we form a few-electron double quantum dot and demonstrate tunable tunnel …
Electron spins in semiconductors are promising qubits because their long coherence times enable nearly 10^9 coherent quantum gate operations. However, developing a scalable high-fidelity two-qubit gate remains challenging. Here, we demonstrate an entangling gate between two double-quantum-dot spin qubits in GaAs by using a magnetic field gradient between the two dots in each qubit to suppress decoherence due to charge noise. When the magnetic gradient dominates the voltage-controlled exchange interaction between electrons, qubit coherence times increase by an order of magnitude. Using randomiz…
Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at GHz gate speeds. We analyze the decoherence caused by 1/f charge noise …
We present a feasible scheme for performing an optically controlled phase gate between two conduction electron spin qubits in adjacent self assembled quantum dots. Interaction between the dots is mediated by the tunneling of the valence hole state which is activated only by applying a laser pulse of the right polarization and frequency. Combining the hole tunneling with the Pauli blocking effect, we obtain conditional dynamics for the two quantum dots, which is the essence of our gating operations. Our results are of explicit relevance to the recent generation of vertically stacked self-assemb…
Singlet-triplet spin qubits in six-electron double quantum dots, in moderate magnetic fields, can show superior immunity to charge noise. This immunity results from the symmetry of orbitals in the second energy shell of circular quantum dots: singlet and triplet states in this shell have identical charge distributions. Our phase-gate simulations, which include $1/f$ charge noise from fluctuating traps, show that this symmetry is most effectively exploited if the gate operation switches rapidly between sweet spots deep in the (3,3) and (4,2) charge stability regions; fidelities very close to on…
Quantum dot hybrid qubits exploit an extended charge-noise sweet spot that suppresses dephasing and has enabled the experimental achievement of high-fidelity single-qubit gates. However, current proposals for two-qubit gates require tuning the qubits away from their sweet spots. Here, we propose a two-hybrid-qubit coupling scheme, based on exchange interactions, that allows the qubits to remain at their sweet spots at all times. The interaction is controlled via the inter-qubit tunnel coupling. By simulating such gates in the presence of realistic quasistatic and $1\!/\!f$ charge noise, we sho…
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and inter-dot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow ite…
Motivated by recent experiments of Zajac et al. [arXiv:1708.03530], we theoretically describe high-fidelity two-qubit gates using the exchange interaction between the spins in neighboring quantum dots subject to a magnetic field gradient. We use a combination of analytical calculations and numerical simulations to provide the optimal pulse sequences and parameter settings for the gate operation. We present a novel synchronization method which avoids detrimental spin flips during the gate operation and provide details about phase mismatches accumulated during the two-qubit gates which occur due…
In this paper we introduce and analyze a new system design for quantum-dot-based qubits that simultaneously supports scalable one-qubit and two-qubit gates, and single-shot qubit measurement. All three key processes (one-qubit gates, two-qubit gates, and qubit measurement) rely on the interaction between the electron in each quantum dot and exciton-polaritons formed in a quantum well situated near the quantum dots. A key novel feature of our proposed system is the use of polariton traps, which we show enhances the quantum-dot--quantum-well interaction by a factor of 10 and consequently results…
The aim of presented research is to design a nanodevice based on a gate-defined quantum dot within a MoS$_2$ monolayer in which we confine a single electron. By applying control voltages to the device gates we modulate the confinement potential and force intervalley transitions. The present Rashba spin-orbit coupling additionally allows for spin operations. Moreover, both effects enable the spin-valley SWAP. The device structure is modeled realistically, taking into account feasible dot-forming potential and electric field that controls the Rasha coupling. Therefore, by performing reliable num…
Addressability of spin qubits in a silicon double quantum dot setup in the (1,1) charge configuration relies on having a large difference between the Zeeman splittings of the electrons. When the difference is not sufficiently large, the rotating wave approximation becomes inaccurate. We consider a device working in this regime, with always-on exchange coupling, and describe how a CZ gate and arbitrary one-qubit gates which are robust against charge noise can be implemented by smoothly pulsing the microwave source, while eliminating the crosstalk. We find that the most significant deviations fr…
We demonstrate a 12 quantum dot device fabricated on an undoped Si/SiGe heterostructure as a proof-of-concept for a scalable, linear gate architecture for semiconductor quantum dots. The device consists of 9 quantum dots in a linear array and 3 single quantum dot charge sensors. We show reproducible single quantum dot charging and orbital energies, with standard deviations less than 20% relative to the mean across the 9 dot array. The single quantum dot charge sensors have a charge sensitivity of 8.2 x 10^{-4} e/root(Hz) and allow the investigation of real-time charge dynamics. As a demonstrat…
A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the g…
A two-qubit controlled-NOT (CNOT) gate, realized by a controlled-phase (C-phase) gate combined with single-qubit gates, has been experimentally implemented recently for quantum-dot spin qubits in isotopically enriched silicon, a promising solid-state system for practical quantum computation. In the experiments, the single-qubit gates have been demonstrated with fault-tolerant control-fidelity, but the infidelity of the two-qubit C-phase gate is, primarily due to the electrical noise, still higher than the required error threshold for fault-tolerant quantum computation (FTQC). Here, by taking t…
Implementing high-fidelity two-qubit gates in single-electron spin qubits in silicon double quantum dots is still a major challenge. In this work, we employ analytical methods to design control pulses that generate high-fidelity entangling gates for quantum computers based on this platform. Using realistic parameters and initially assuming a noise-free environment, we present simple control pulses that generate CNOT, CPHASE, and CZ gates with average fidelities greater than 99.99\% and gate times as short as 45 ns. Moreover, using the local invariants of the system's evolution operator, we sho…
We introduce a silicon metal-oxide-semiconductor quantum dot architecture based on a single polysilicon gate stack. The elementary structure consists of two enhancement gates separated spatially by a gap, one gate forming a reservoir and the other a quantum dot. We demonstrate, in three devices based on two different versions of this elementary structure, that a wide range of tunnel rates is attainable while maintaining single-electron occupation. A characteristic change in slope of the charge transitions as a function of the reservoir gate voltage, attributed to screening from charges in the …
Performing qubit gate operations as quickly as possible can be important to minimize the effects of decoherence. For resonant gates, this requires applying a strong ac drive. However, strong driving can present control challenges by causing leakage to levels that lie outside the qubit subspace. Strong driving can also present theoretical challenges because preferred tools such as the rotating wave approximation can break down, resulting in complex dynamics that are difficult to control. Here we analyze resonant $X$ rotations of a silicon quantum double dot hybrid qubit within a dressed-state f…
Spin qubit gates via phonon buses in electron nanowires
Blackett Laboratory, Imperial College London（帝国理工学院布莱克特实验室）；Department of Physics and Astronomy, University College London（伦敦大学学院物理与天文系）；School of Basic Sciences, Indian Institute of Technology, Bhubaneswar（印度理工学院布巴内斯瓦尔基础科学系）；Department of Electronic and Electrical Engineering, University College London（伦敦大学学院电子电气工程系）；London Centre for Nanotechnology, University College London（伦敦大学学院纳米技术研究中心）；Cavendish Laboratory, Department of Physics, University of Cambridge（剑桥大学卡文迪许物理学实验室）；CPHT, CNRS, École Polytechnique, Institut Polytechnique de Paris（巴黎综合理工学院高等应用物理中心，法国国家科学研究中心）
Quantum gates in coupled quantum dots controlled by coupling modulation
Instituto de Modelado e Innovación tecnológica, CONICET-UNNE, Facultad de Ciencias Exactas y Naturales y Agrimensura, Universidad Nacional del Nordeste（国家科学技术研究委员会-内格罗河大学建模与创新技术研究所，自然科学与测量学院，东北国立大学）
In this theoretical manuscript I propose a scheme for entangling a single electron semiconductor spin qubit with a single electron semiconductor charge qubit in a triangular triple quantum dot configuration. Two out of three quantum dots are used to define a single electron semiconductor charge qubit. Furthermore, the spin qubit is embedded in the Zeeman sub-levels of the third quantum dot. Combining single qubit gates with entangling CNOT gates allows one to construct a SWAP gate, and therefore to use the semiconductor spin qubit as a long-lived memory for the semiconductor charge qubit.
A spin qubit in semiconductor quantum dots holds promise for quantum information processing for scalability and long coherence time. An important semiconductor qubit system is a double quantum dot trapping two electrons or holes, whose spin states encode either a singlet-triplet qubit or two single-spin qubits coupled by exchange interaction. In this article, we report progress on spin dephasing of two exchange-coupled spins in a double quantum dot. We first discuss the schemes of two-qubit gates and qubit encodings in gate-defined quantum dots or donor atoms based on the exchange interaction.…
Defining quantum dots in semiconductor based heterostructures is an essential step in initializing solid-state qubits. With growing device complexity and increasing number of functional devices required for measurements, a manual approach to finding suitable gate voltages to confine electrons electrostatically is impractical. Here, we implement a two-stage device characterization and dot-tuning process which first determines whether devices are functional and then attempts to tune the functional devices to the single or double quantum dot regime. We show that automating well established manual…
We demonstrate a hybrid device architecture where the charge states in a double quantum dot (DQD) formed in a Si/SiGe heterostructure are read out using an on-chip superconducting microwave cavity. A quality factor Q = 5,400 is achieved by selectively etching away regions of the quantum well and by reducing photon losses through low-pass filtering of the gate bias lines. Homodyne measurements of the cavity transmission reveal DQD charge stability diagrams and a charge-cavity coupling rate g_c/2pi = 23 MHz. These measurements indicate that electrons trapped in a Si DQD can be effectively couple…
