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arXiv 1806.07597quant-phcond-mat.mes-hall
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受控制噪声影响的半导体自旋量子比特实现中的门保真度比较

Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises

E. Ferraro, M. Fanciulli, M. De Michielis

摘要:

报道了在不同控制误差下,量子点和施主中不同自旋量子比特类型的门的量子效率的比较。我们研究了五种量子比特类型,即量子点自旋量子比特、双量子点单重态-三重态量子比特、双量子点混合量子比特、施主量子比特和量子点自旋施主量子比特。对于每一个,我们推导出解析的时间序列,实现单量子比特旋转沿主轴的布洛赫球。利用高斯噪声模型估计了控制误差对门保真度的影响。然后,我们通过使用一组实际的控制幅度的误差参数值,比较了由于脉冲定时误差而导致的量子比特实现之间的门延迟。

英文摘要:

A comparison of gate fidelities between different spin qubit types defined in quantum dots and a donor under different control errors is reported. We studied five qubit types, namely the quantum dot spin qubit, the double quantum dot singlet-triplet qubit, the double quantum dot hybrid qubit, the donor qubit and the quantum dot spin-donor qubit. For each one, we derived analytical time sequences that realize single qubit rotations along the principal axis of the Bloch sphere. We estimated the effects of control errors on the gate fidelity by using a Gaussian noise model. Then we compared the gate fidelities among qubit implementations due to pulse timing errors by using a realistic set of values for the error parameters of control amplitudes.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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