AI 中文总结
该研究针对半导体量子点器件架构无法高效实现CNOT等非对称控制-目标门的问题，提出异质双量子点器件蓝图，可在同位素纯化硅中实现单脉冲容错的100纳秒CNOT门。
AI 中文摘要
通用量子计算需要单量子比特控制以及至少一个纠缠双量子比特门。CNOT和CROT门是这类门的两个著名例子，其中一个量子比特（控制比特）的状态决定了施加给另一个量子比特（目标比特）的变换。通过利用对称性推导，我们证明当前基于半导体量子点的器件架构，无法通过海森堡交换、库仑排斥或其他在自旋交换下不变的相互作用，高效实现CNOT门及其他非对称控制-目标门。基于这一通用原理，我们提出了一种双量子点器件的异质蓝图，通过打破自旋交换对称性可实现CNOT门的高效实现。关键的是，我们的数值模拟预测，这种新型器件蓝图可在同位素纯化硅中实现单脉冲容错的100纳秒CNOT门。
英文摘要
Universal quantum computation requires single-qubit control together with at least one entangling two-qubit gate. CNOT and CROT gates are two famous examples of such gates, wherein the state of one qubit (control) dictates the transformation applied to the other (target). By using a simple derivation motivated by symmetry, we show that current device architectures of semiconductor-based quantum dot devices prevent efficient implementation of a CNOT and other asymmetric control-target gates via Heisenberg exchange, Coulomb repulsion, or other interaction that is invariant under spin exchange. Guided by this general principle, we propose a heterogeneous blueprint of double quantum dot devices that enables efficient implementation of the CNOT by breaking the spin exchange symmetry. Crucially, our numerical simulations predict that this novel device blueprint can enable a single-pulse fault-tolerant 100-ns CNOT gate in isotopically purified silicon.
