Signal coupling to embedded pitch adapters in silicon sensors
Marina Artuso, Christopher Betancourt, Iaroslava Bezshyiko, Steven Blusk, Ruth Bruendler, Szymon Bugiel, Roma Dasgupta, Adam Dendek, Biplab Dey, Scott Ely, Fede… 展开作者
Marina Artuso, Christopher Betancourt, Iaroslava Bezshyiko, Steven Blusk, Ruth Bruendler, Szymon Bugiel, Roma Dasgupta, Adam Dendek, Biplab Dey, Scott Ely, Federica Lionetto, Marco Petruzzo, Ivan Polyakov, Matthew Rudolph, Heinrich Schindler, Olaf Steinkamp, Sheldon Stone
We have examined the effects of embedded pitch adapters on signal formation in n-substrate silicon microstrip sensors with data from beam tests and simulation. According to simulation, the presence of the pitch adapter metal layer changes the electric field inside the sensor, resulting in slowed signal formation on the nearby strips and a pick-up effect on the pitch adapter. This can result in an inefficiency to detect particles passing through the pitch adapter region. All these effects have been observed in the beam test data.
In June 2008 single-sided silicon strip sensors with 50 $μ$m readout pitch were tested in a highly energetic pion beam at the SPS at CERN. The purpose of the test was to evaluate characteristic detector properties by varying the strip width and the number of intermediate strips. The experimental setup and first results for the spatial resolution are discussed.
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGA…
Development of Small-pitch, Ultra-thin 3D Silicon Sensors at USTC
University of Science and Technology of China（中国科学技术大学）；Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences (CAS)（中国科学院苏州纳米技术与纳米仿生研究所）；State Key Laboratory of Fabrication Technologies for Integrated Circuits, Chinese Academy of Sciences（中国科学院集成工艺国家重点实验室）
A silicon pixel detector with fine pitch size of 19x19 um, developed base on SOI (silicon on insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative way to particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs (minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, …
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes …
Silicon tracking detectors can record the charge in each channel (analog or digitized) or have only binary readout (hit or no hit). While there is significant literature on the position resolution obtained from interpolation of charge measurements, a comprehensive study of the resolution obtainable with binary readout is lacking. It is commonly assumed that the binary resolution is $\text{pitch}/\sqrt{12}$, but this is generally a worst case upper limit. In this paper we study, using simulation, the best achievable resolution for minimum ionizing particles in binary readout pixels. A wide rang…
The physics aims at the proposed future high-energy linear $e^+e^-$ collider CLIC pose challenging demands on the performance of the detector system. In particular, the vertex and tracking detectors have to combine a spatial resolution of a few micrometres and a low material budget with a time-stamping accuracy of a few nanoseconds. For the vertex detector, fine-pitch sensors, dedicated 65nm readout ASICs, fine-pitch bonding techniques using solder bumps or anisotropic conductive films as well as monolithic devices based on Silicon-On-Insulator technology are explored. Fully monolithic CMOS se…
A collaboration between Fermilab and the Institute for High Energy Physics (IHEP), Beijing, has developed a beam position monitor for the IHEP test beam facility. This telescope is based on 5 stations of silicon strip detectors having a pitch of 60 microns. The total active area of each layer of the detector is about 12x10 cm2. Readout of the strips is provided through the use of VA1` ASICs mounted on custom hybrid printed circuit boards and interfaced to Adapter Cards via copper-over-kapton flexible circuits. The Adapter Cards amplify and level-shift the signal for input to the Fermilab CAPTA…
Hybrid pixel detectors require a reliable and cost-effective interconnect technology adapted to the pitch and die sizes of the respective applications. During the ASIC and sensor R\&D phase, especially for small-scale applications, such interconnect technologies need to be suitable for the assembly of single dies, typically available from Multi-Project-Wafer submissions. Within the CERN EP R&D programme and the AIDAinnova collaboration, innovative hybridisation concepts targeting vertex-detector applications at future colliders are under development. Recent results of two novel interconnect me…
The High Luminosity Upgrade of the LHC will require the replacement of the Inner Detector of ATLAS with the Inner Tracker (ITk) in order to cope with higher radiation levels and higher track densities. Prototype silicon strip detector modules are currently developed and their performance is studied in both particle test beams and X-ray beams. In previous test beam studies of prototype modules, silicon sensor strips were found to respond in regions varying from the strip pitch of 74.5 {\upmu}m. The variations have been linked to local features of the sensor architecture. This paper presents res…
The Dark Matter Particle Explorer (DAMPE) is an upcoming scientific satellite mission for high energy gamma-ray, electron and cosmic rays detection. The silicon tracker (STK) is a sub detector of the DAMPE payload with an excellent position resolution (readout pitch of 242um), which measures the incident direction of particles, as well as charge. The STK consists 12 layers of Silicon Micro-strip Detector (SMD), equivalent to a total silicon area of 6.5m$^2$. The total readout channels of the STK are 73728, which leads to a huge amount of raw data to be dealt. In this paper, we focus on the on-…
A new generation of 3D silicon pixel detectors with a small pixel size of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ is being developed for the HL-LHC tracker upgrades. The radiation hardness of such detectors was studied in beam tests after irradiation to HL-LHC fluences up to $1.4\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$. At this fluence, an operation voltage of only 100 V is needed to achieve 97% hit efficiency, with a power dissipation of 13 mW/cm$^2$ at -25$^{\circ}$C, considerably lower than for previous 3D sensor generations and planar sensors.
The Silicon Electron Multiplier (SiEM) is a novel sensor concept for minimum ionizing particle (MIP) detection which uses internal gain and fine pitch to achieve excellent temporal and spatial resolution. In contrast to sensors where the gain region is induced by doping (LGADs, APDs), amplification in the SiEM is achieved by applying an electric potential difference in a composite electrode structure embedded within the silicon bulk using MEMS fabrication techniques. Since no gain-layer deactivation is expected with radiation damage, such a structure is expected to withstand fluences of up to …
Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 $μm$ for 200-$μm$ pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained…
Thin planar silicon sensors with a pitch of 55um, active edge and various guard ring layouts are investigated, using two-dimensional finite-element T-CAD simulations. The simulation results have been compared to experimental data, and an overall good agreement is observed. It is demonstrated that 50um thin planar silicon sensors with active edge with floating guard ring or without guard ring can be operated fully efficiently up to the physical edge of the sensor. The simulation findings are used to identify suitable sensor designs for application in the high-precision vertex detector of the fu…
A study of 3D pixel sensors of cell size 50 μm x 50 μm fabricated at IMB-CNM using double-sided n-on-p 3D technology is presented. Sensors were bump-bonded to the ROC4SENS readout chip. For the first time in such a small-pitch hybrid assembly, the sensor response to ionizing radiation in a test beam of 5.6 GeV electrons was studied. Results for non-irradiated sensors are presented, including efficiency, charge sharing, signal-to-noise, and resolution for different incidence angles.
The response of n+p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics K.K. on 200 micrometer thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 micrometer, and both p-stop and p-spray isolation of the n+ strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at t…
The planned HL-LHC (High Luminosity LHC) in 2025 is being designed to maximise the physics potential through a sizable increase in the luminosity up to 6*10^34 cm^-2 s^-1. A consequence of this increased luminosity is the expected radiation damage at 3000 fb^-1 after ten years of operation, requiring the tracking detectors to withstand fluences to over 1*10^16 1 MeV n_eq/cm^2 . In order to cope with the consequent increased readout rates, a complete re-design of the current ATLAS Inner Detector (ID) is being developed as the Inner Tracker (ITk). Two proposed detectors for the ATLAS strip track…
The radiation hardness of passive CMOS pixel sensors fabricated in 150 nm LFoundry technology is investigated. CMOS process lines are especially of interest for large-scale silicon detectors as they offer high production throughput at comparatively low cost. Moreover, several features like poly-silicon resistors, MIM-capacitors and several metal layers are available which can help enhance the sensor design. The performance of a 100 $\mathrmμ$m thin passive CMOS sensor with a pixel pitch of 50 $\mathrmμ$m at different irradiation levels, 5 $\times$ 10$^{15}$n$_{\mathrm{eq}}$cm$^{-2}$ and 1 $\ti…
Pixelated silicon detectors are state-of-the-art technology to achieve precise tracking and vertexing at collider experiments, designed to accurately measure the hit position of incoming particles in high rate and radiation environments. The detector requirements become extremely demanding for operation at the High-Luminosity LHC, where up to 200 interactions will overlap in the same bunch crossing on top of the process of interest. Additionally, fluences up to 2.3 10^16 cm^-2 1 MeV neutron equivalent at 3.0 cm distance from the beam are expected for an integrated luminosity of 3000 fb^-1. In …
This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pit…
Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multiple read-out channels. This work presents the first experimental results obtained from a 3$\times$4 array with 200~\mum~pitch, coming from the RSD2 production manufactured by FBK, read out with a 16-c…
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with pitch size (p) ranging from 0.1 um to 10 um. Considering the preferable bending direction with respect to the MBE cells as well as the layout of the substrate pattern, we are able to modify the strain distribution along the NW growth axis and the subsequent bending profile. For NW arrays with high number density, the obtained bending profile of the NWs is composed of straight (barely-strained) and bent (strai…
Small-pitch 3D silicon pixel detectors have been investigated as radiation-hard candidates for the innermost layers of the HL-LHC pixel detector upgrades. Prototype 3D sensors with pixel sizes of 50$\times$50 and 25$\times$100 $μ$m$^{2}$ connected to the existing ATLAS FE-I4 readout chip have been produced by CNM Barcelona. Irradiations up to particle fluences of $3\times10^{16}$ n$_{\mathrm{eq}}$/cm$^2$, beyond the full expected HL-LHC fluences at the end of lifetime, have been carried out at Karlsruhe and CERN. The performance of the 50$\times$50 $μ$m$^{2}$ devices has been measured in the l…
In the last years, high-resolution time tagging has emerged as the tool to tackle the problem of high-track density in the detectors of the next generation of experiments at particle colliders. Time resolutions below 50ps and event average repetition rates of tens of MHz on sensor pixels having a pitch of 50$μ$m are typical minimum requirements. This poses an important scientific and technological challenge on the development of particle sensors and processing electronics. The TIMESPOT initiative (which stands for TIME and SPace real-time Operating Tracker) aims at the development of a full pr…
A testbeam telescope, based on ATLAS IBL silicon pixel modules, has been built. It comprises six planes of planar silicon sensors with 250 x 50 um^2 pitch, read out by ATLAS FE-I4 chips. In the CERN SPS H8 beamline (180 GeV pi+) a resolution of better than 8 x 12 um^2 at the position of the device under test was achieved. The telescope reached a trigger rate of 6kHz with two measured devices. It is mainly designed for studies using FE-I4 based prototypes, but has also been successfully run with independent DAQ systems. Specialised trigger schemes ensure data synchronisation between these exter…
CVD diamond is an attractive material option for LHC vertex detectors because of its strong radiation-hardness causal to its large band gap and strong lattice. In particular, pixel detectors operating close to the interaction point profit from tiny leakage currents and small pixel capacitances of diamond resulting in low noise figures when compared to silicon. On the other hand, the charge signal from traversing high energy particles is smaller in diamond than in silicon by a factor of about 2.2. Therefore, a quantitative determination of the signal-to-noise ratio (S/N) of diamond in compariso…
The NeuLAND (New Large-Area Neutron Detector) plastic-scintillator-based time-of-flight detector for 0.1-1.6 GeV neutrons is currently under construction at the Facility for Antiproton and Ion Research (FAIR), Darmstadt, Germany. In its final configuration, NeuLAND will consist of 3000 2.7 m $\times$ 5 cm $\times$ 5 cm big plastic scintillator bars that are read out on each end by fast timing photomultipliers. Here, data from a comprehensive study of an alternative light readout scheme using silicon photomultipliers (SiPM) are reported. For this purpose, a NeuLAND bar was instrumented on each …
CLIC is a proposed linear e+e- collider designed to provide particle collisions at center-of-mass energies of up to 3 TeV. Precise measurements of the properties of the top quark and the Higgs boson, as well as searches for Beyond the Standard Model physics require a highly performant CLIC detector. In particular the vertex detector must provide a single point resolution of only a few micrometers while not exceeding the envisaged material budget of around 0.2% X0 per layer. Beam-beam interactions and beamstrahlung processes impose an additional requirement on the timestamping capabilities of t…
To achieve the physics goals of future colliders, it is necessary to develop novel, radiation-hard silicon sensors for their tracking detectors. We target the replacement of hybrid pixel detectors with Depleted Monolithic Active Pixel Sensors (DMAPS) that are radiation-hard, monolithic CMOS sensors. We have designed, manufactured and tested the MALTA series of sensors, which are DMAPS in the 180 nm TowerJazz CMOS imaging technology. MALTA have a pixel pitch well below current hybrid pixel detectors, high time resolution (< 2 ns) and excellent charge collection efficiency across pixel geometrie…
The development of detectors that provide high resolution in four dimensions has attracted wide-spread interest in the scientific community for applications in high-energy physics, nuclear physics, medical imaging, mass spectroscopy as well as quantum information. However, finding a technology capable of fulfilling such aspiration proved to be an arduous task. Among other silicon-based candidates, the Low-Gain Avalanche Diode (LGAD) has already shown excellent timing performances but proved to be unsuitable for fine pixelization. Therefore, the AC-coupled LGAD (AC-LGAD) approach was introduced…
CMOS sensors were successfully implemented in the STAR tracker [1]. LHC experiments have shown that efficient b tagging, reconstruction of displaced vertices and identification of disappearing tracks are necessary. An improved vertex detector is justified for the ILC. To achieve a point(spatial single layer) resolution below the one-μm range while improving other characteristics (radiation tolerance and eventually time resolution) we will need the use of 1-micron pitch pixels. Therefore, we propose a single MOS transistor that acts as an amplifying device and a detector with a buried charge-co…
