Resistive AC-Coupled Silicon Detectors: principles of operation and first results from a combined analysis of beam test and laser data
M. Tornago, R. Arcidiacono, N. Cartiglia, M. Costa, M. Ferrero, M. Mandurrino, F. Siviero, V. Sola, A. Staiano, A. Apresyan, K. Di Petrillo, R. Heller, S. Los, … 展开作者
M. Tornago, R. Arcidiacono, N. Cartiglia, M. Costa, M. Ferrero, M. Mandurrino, F. Siviero, V. Sola, A. Staiano, A. Apresyan, K. Di Petrillo, R. Heller, S. Los, G. Borghi, M. Boscardin, G-F Dalla Betta, F. Ficorella, L. Pancheri, G. Paternoster, H. Sadrozinski, A. Seiden
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes or an external magnetic field. Careful tuning of the coupling oxide thickness and the $n^+$ doping profile is at the basis of the successful functioning of this device. Several RSD matrices with different pad width-pitch geometries have been extensively tested with a laser setup in the Laboratory for Innovative Silicon Sensors in Torino, while a smaller set of devices have been tested at the Fermilab Test Beam Facility with a 120 GeV/c proton beam. The measured spatial resolution ranges between $2.5\; μm$ for 70-100 pad-pitch geometry and $17\; μm$ with 200-500 matrices, a factor of 10 better than what is achievable in binary read-out ($bin\; size/ \sqrt{12}$). Beam test data show a temporal resolution of $\sim 40\; ps$ for 200-$μm$ pitch devices, in line with the best performances of LGAD sensors at the same gain.
The upgrade of the Resistive Plate Chamber (RPC) detector, in order to increase the detector rate capability and to be able to work efficiently in high rate environment, consists in the reduction of the operating voltage along with the detection of signals which are few hundred μV small. The approach chosen by this project to achieve this objective is to develop a new kind of Front End electronics which, thanks to a mixed technology in Silicon and Silicon-Germanium, enhance the detector performances increasing its rate capability. The Front End developed is composed by a preamplifier in Silico…
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors b…
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGA…
In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain Avalanche Detectors (LGAD), they benefit from the very good timing performances of such technology together with an unprecedented resolution of the spatial tracking, which allows to reach the micron-le…
Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 $μm$ for 200-$μm$ pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained…
We report on an optimized micro-machined thermal flow-rate sensor as part of an autonomous multi-parameter sensing device for water network monitoring. The sensor has been optimized under the following constraints: low power consumption and high sensitivity, while employing a large thermal conductivity substrate, namely silicon. The resulting device consists of a platinum resistive heater deposited on a thin silicon pillar ~ 100 $μ$m high and 5 $μ$m wide in the middle of a nearly 100 $μ$m wide cavity. Operated under the anemometric scheme, the reported sensor shows a larger sensitivity in the …
Single gap (gas gap 2 mm) bakelite Resistive Plate Chamber (RPC) modules of various sizes from 10 cm \times 10 cm to 1 m \times 1 m have been fabricated, characterized and optimized for efficiency and time resolution. Thin layers of different grades of silicone compound are applied to the inner electrode surfaces to make them smooth and also to reduce the surface resistivity. In the silicone coated RPCs an efficiency > 90% and time resolution \sim 2 ns (FWHM) have been obtained for both the streamer and the avalanche mode of operation. Before fabrication of detectors the electrical properties …
RSDs (Resistive AC-Coupled Silicon Detectors) are n-in-p silicon sensors based on the LGAD (Low-Gain Avalanche Diode) technology, featuring a continuous gain layer over the whole sensor area. The truly innovative feature of these sensors is that the signal induced by an ionising particle is seen on several pixels, allowing the use of reconstruction techniques that combine the information from many read-out channels. In this contribution, the first application of a machine learning technique to RSD devices is presented. The spatial resolution of this technique is compared to that obtained with …
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the …
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then…
We describe here various detectors designs: GEM type, MICROMEGAStype, PPACtype as well as cascaded detectors made of a resistive mesh manufactured from a resistive Kapton foil, (20 microns thick, resistivity a few MOhm per square) by a laser drilling technique. As in any other micropattern detectors the maximum achievable gas gain of these detectors is restricted by the Raether limit, however, the resistive mesh makes them and the front end electronics fully spark protected. This approach could be an alternative or complimentary to the ongoing efforts in developing MICROMEGAS and GEMs with res…
This paper presents a first study of the performance of a novel 2D position-sensitive microstrip detector, where the resistive charge division method was implemented by replacing the metallic electrodes with resistive electrodes made of polycrystalline silicon. A characterization of two proof-of-concept prototypes with different values of the electrode resistivity was carried out using a pulsed Near Infra-Red laser. The experimental data were compared with the electrical simulation of the sensor equivalent circuit coupled to simple electronics readout circuits. The good agreement between exper…
The time resolution for several single gap (2 mm) prototype Resistive Plate Chambers (RPC) made of high resistive (bulk resistivity ~ 10^10 - 10^12 ohm cm), 2 mm thick matt finished bakelite paper laminates with silicone coating on the inner surfaces, has been measured. The time resolution for all the modules has been found to be ~ 2 ns at the plateau region.
We performed an experimental study to determine the pixel recovery time of various Multi Pixel Photon Counters (MPPCs) in order to characterize their rate capability and double-hit resolution. The recovery time constant and its dependence on the operating voltage has been evaluated by measuring the photosensor response to two consecutive laser pulses with varying relative time differences of a few ns (2-3 ns) up to some 100 ns using a waveform analysis technique. A Monte Carlo simulation tool is being developed to model the MPPC recovery process and interpret experimental data. In this context…
We demonstrate an 8 by 14 Gbps compatible WDM link based on a single-section semiconductor mode-locked laser, silicon photonics resonant ring modulators and joint channel reamplification with a semiconductor optical amplifier operated in the linear regime. Individual channels reach a data rate of 25 Gbps with signal quality-factors above 7.
Current interferometric gravitational wave detectors use the combination of quasi-monochromatic, continuous-wave laser light at 1064 nm and fused silica test masses at room temperature. Detectors of the third generation, such as the Einstein-Telescope, will involve a considerable sensitivity increase. The combination of 1550 nm laser radiation and crystalline silicon test masses at low temperatures might be important ingredients in order to achieve the sensitivity goal. Here we compare some properties of the fused silica and silicon test mass materials relevant for decreasing the thermal noise…
The resolution function of a spectrometer based on a strongly bent single crystal (bending radius of 10 cm or less) is evaluated. It is shown that the resolution is controlled by two parameters, (i) the ratio of the lattice spacing of the chosen reflection to the crystal thickness and (ii) a single parameter comprising crystal thickness, its bending radius, and anisotropic elastic constants of the chosen crystal. Diamond, due to its unique elastic properties, can provide notably higher resolution than silicon. The results allow to optimize the parameters of bent crystal spectrometers for the h…
A silicon pixel detector with fine pitch size of 19x19 um, developed base on SOI (silicon on insulator) technology, was tested under the illumination of infrared laser pulses. As an alternative way to particle beam tests, the laser pulses were tuned to very short duration and small transverse profile to simulate the tracks of MIPs (minimum ionization particles) in silicon. Hit cluster sizes were measured with focused laser pulses propagating through the SOI detector perpendicular to its surface and most of the induced charge was found to be collected inside the seed pixel. For the first time, …
