In this paper we present a complete characterization of the first batch of Resistive AC-Coupled Silicon Detectors, called RSD1, designed at INFN Torino and manufactured by Fondazione Bruno Kessler (FBK) in Trento. With their 100% fill-factor, RSD represent the new enabling technology for high-precision 4D-tracking. Indeed, being based on the well-known charge multiplication mechanism of Low-Gain Avalanche Detectors (LGAD), they benefit from the very good timing performances of such technology together with an unprecedented resolution of the spatial tracking, which allows to reach the micron-level scale in the track reconstruction. This is essentially due to the absence of any segmentation structure between pads (100% fill-factor) and to other two innovative key-features: the first one is a properly doped n+ resistive layer, slowing down the charges just after being multiplied, and the second one is a dielectric layer grown on Silicon, inducing a capacitive coupling on the metal pads deposited on top of the detector. The very good spatial resolution (micron-level) we measured experimentally - higher than the nominal pad pitch - comes from the analogical nature of the readout of signals, whose amplitude attenuates from the pad center to its periphery, while the outstanding results in terms of timing (less than 14 ps, even better than standard LGAD) are due to a combination of very-fine pitch, analogical response and charge multiplication.
We designed, produced, and tested RSD (Resistive AC-Coupled Silicon Detectors) devices, an evolution of the standard LGAD (Low-Gain Avalanche Diode) technology where a resistive n-type implant and a coupling dielectric layer have been implemented. The first feature works as a resistive sheet, freezing the multiplied charges, while the second one acts as a capacitive coupling for readout pads. We succeeded in the challenging goal of obtaining very fine pitch (50, 100, and 200 um) while maintaining the signal waveforms suitable for high timing and 4D-tracking performances, as in the standard LGA…
Resistive AC-coupled Silicon Detectors (RSDs) are based on the Low Gain Avalanche Diode (LGAD) technology, characterized by a continuous gain layer, and by the innovative introduction of resistive read-out. Thanks to a novel electrode design aimed at maximizing signal sharing, RSD2, the second RSD production by Fondazione Bruno Kessler (FBK), achieves a position resolution on the whole pixel surface of about 8 $μm$ for 200-$μm$ pitch. RSD2 arrays have been tested using a Transient Current Technique setup equipped with a 16-channel digitizer, and results on spatial resolution have been obtained…
Two design innovations, low-gain avalanche (Low-Gain Avalance Diode, LGAD) and resistive read-out (Resistive Silicon Detector, RSD), have brought strong performance improvements to silicon sensors. Large signals, due to the added gain mechanism, lead to improved temporal precision, while charge sharing, introduced by resistive read-out, allows for achieving excellent spatial resolution even with large pixels. LGAD- and RSD- based silicon sensors are now adopted, or considered, in several future experiments and are the basis for almost every next 4D-trackers. New results obtained with sensors b…
In this contribution we describe the second run of RSD (Resistive AC-Coupled Silicon Detectors) designed at INFN Torino and produced by Fondazione Bruno Kessler (FBK), Trento. RSD are n-in-p detectors intended for 4D particle tracking based on the LGAD technology that get rid of any segmentation implant in order to achieve the 100% fill-factor. They are characterized by three key-elements, (i) a continuous gain implant, (ii) a resistive n-cathode and (iii) a dielectric coupling layer deposited on top, guaranteeing a good spatial reconstruction of the hit position while benefiting from the good…
This paper presents the principles of operation of Resistive AC-Coupled Silicon Detectors (RSDs) and measurements of the temporal and spatial resolutions using a combined analysis of laser and beam test data. RSDs are a new type of n-in-p silicon sensor based on the Low-Gain Avalanche Diode (LGAD) technology, where the $n^+$ implant has been designed to be resistive, and the read-out is obtained via AC-coupling. The truly innovative feature of RSD is that the signal generated by an impinging particle is shared isotropically among multiple read-out pads without the need for floating electrodes …
RSDs (Resistive AC-Coupled Silicon Detectors) are n-in-p silicon sensors based on the LGAD (Low-Gain Avalanche Diode) technology, featuring a continuous gain layer over the whole sensor area. The truly innovative feature of these sensors is that the signal induced by an ionising particle is seen on several pixels, allowing the use of reconstruction techniques that combine the information from many read-out channels. In this contribution, the first application of a machine learning technique to RSD devices is presented. The spatial resolution of this technique is compared to that obtained with …
Resistive Silicon Detectors (RSD, also known as AC-LGAD) are innovative silicon sensors, based on the LGAD technology, characterized by a continuous gain layer that spreads across the whole sensor active area. RSDs are very promising tracking detectors, thanks to the combination of the built-in signal sharing with the internal charge multiplication, which allows large signals to be seen over multiple read-out channels. This work presents the first experimental results obtained from a 3$\times$4 array with 200~\mum~pitch, coming from the RSD2 production manufactured by FBK, read out with a 16-c…
The basic principle of operation of silicon sensors with resistive read-out is built-in charge sharing. Resistive Silicon Detectors (RSD, also known as AC-LGAD), exploiting the signals seen on the electrodes surrounding the impact point, achieve excellent space and time resolutions even with very large pixels. In this paper, a TCT system using a 1064 nm picosecond laser is used to characterize sensors from the second RSD production at the Fondazione Bruno Kessler. The paper first introduces the parametrization of the errors in the determination of the position and time coordinates in RSD, then…
In this work, we introduce a new design concept: the DC-Coupled Resistive Silicon Detectors, based on the LGAD technology. This new approach intends to address a few known features of the first generation of AC-Coupled Resistive Silicon Detectors (RSD). Our simulation exploits a fast hybrid approach based on a combination of two packages, Weightfield2 and LTSpice. It demonstrates that the key features of the RSD design are maintained, yielding excellent timing and spatial resolutions: a few tens of ps and a few microns. In the presentation, we will outline the optimization methodology and the …
The PICOSEC detection concept consists in a "two-stage" Micromegas detector coupled to a Cherenkov radiator and equipped with a photocathode. A proof of concept has already been tested: a single-photoelectron response of 76 ps has been measured with a femtosecond UV laser at CEA/IRAMIS, while a time resolution of 24 ps with a mean yield of 10.4 photoelectrons has been measured for 150 GeV muons at the CERN SPS H4 secondary line. This work will present the main results of this prototype and the performance of the different detector configurations tested in 2016-18 beam campaigns: readouts (bulk…
μRWELL-PICOSEC: Precision Timing with Resistive Micro-Well Detector
Thomas Jefferson National Accelerator Facility（托马斯·杰斐逊国家加速器设施）；IRFU, CEA, Université Paris-Saclay（IRFU, 法国原子能和替代能源委员会, 巴黎萨克雷大学）；Department of Physics, Aristotle University of Thessaloniki（塞萨洛尼基亚里士多德大学物理系）；Center for Interdisciplinary Research and Innovation (CIRI-AUTH)（跨学科研究与创新中心）；Department for Medical Physics, Ludwig Maximilian University of Munich（慕尼黑路德维希-马克西米利安大学医学物理系）；European Organization for Nuclear Research (CERN)（欧洲核子研究组织）；Dipartimento di Fisica, Università di Pavia（帕维亚大学物理系）；INFN Sezione di Pavia（意大利国家核物理研究所帕维亚分部）；Department of Physics and Astronomy, Stony Brook University（石溪大学物理与天文学系）；Institute of Nuclear and Particle Physics, NCSR Demokritos（国家科学研究中心德谟克利特研究所核与粒子物理研究所）
Properties of superconducting nanowires set the performance level for Superconducting Nanowire Single Photon Detectors (SNSPD). Reset time in commonly employed large area SNSPDs,5-10ns,is known to be limited by the nanowires kinetic inductance.On the other hand, reduction of the kinetic inductance in small area (waveguide integrated) SNSPDs prevents biasing them close to the critical current due to latching into a permanent resistive state.In order to reduce the reset time in SNSPDs, superconducting nanowires with both low kinetic inductance and fast electron energy relaxation are required. In…
Resistive Plate Chamber Detector Construction and Certification: State-of-the-Art Facilities at the Max Planck Institute for Physics, in Partnership with Industrial Partners
