The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact on NW growth by molecular beam epitaxy. We show that boiling the substrate in ultrapure water leads to a significant improvement in the vertical yield of NWs (realizing 80%) grown on substrates patterned by electron-beam lithography (EBL). Tentatively, we attribute this improvement to a reduction in atomic roughness of the substrate in the mask opening. On this basis, we transfer our growth results to substrates processed by a technique that enables the efficient patterning of large arrays, nano imprint lithography (NIL). In order to obtain hole sizes below 50 nm, we combine the conventional NIL process with an indirect pattern transfer (NIL-IPT) technique. Thereby, we achieve smaller hole sizes than previously reported for conventional NIL and growth results that are comparable to those achieved on EBL patterned substrates.
We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique p…
Since the pioneering work of S.Y. Chou et al.[1] Nano Imprint Lithography (NIL) has emerged as a promising technique for surface patterning, opening for numerous applications ranging from nanophotonics[2] to microfluidics[3]. NIL basically consists in the stamping of deformable surfaces or films. Preferred materials are thermoplastics[4] and UV curable resists[5]. So far, most papers report on single imprinting methods for which the same surface is imprinted only once. In the present paper, we report the imprinting of square silica structures from simple line gratings and demonstrate how the s…
Silicon heterojunction (SHJ) solar cells with an interdigitated back-contact (IBC) exhibit high conversion efficiencies of up to 25.6%. However, due to the sophisticated back-side pattern of the doped layers and electrode structure many processing and patterning steps are required. A simplification of the patterning steps could ideally increase the yield and/or lower the production costs. We propose a patterning approach for IBC SHJ solar cells free of any photo-lithography with the help of laser-induced forward transfer (LIFT) of the individual layer stacks to create the required back-contact…
In this paper, we report direct patterning of metal nanostructures using an embossed solid electrochemical stamp. Microforming of solid superionic stamps using Si templates-analogous to polymer patterning in nano-imprint lithography-is explored. Silver sulfide (Ag2S)-a superionic conductor with excellent micro-forming properties-is investigated as a candidate material. Important parameters of the superionic stamp, including mechanical behavior, material flow during forming, and feature recovery after embossing are studied. Excellent feature transferability during embossing as well as etching i…
In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001. The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 nm to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach…
The nanoscale control afforded by scanning probe microscopes has prompted the development of a wide variety of scanning probe-based patterning methods. Some of these methods have demonstrated a high degree of robustness and patterning capabilities that are unmatched by other lithographic techniques. However, the limited throughput of scanning probe lithography has prevented their exploitation in technological applications. Here, we review the fundamentals of scanning probe lithography and its use in materials science and nanotechnology. We focus on the methods and processes that offer genuinel…
The chemical functionalization of graphene enables control over electronic properties and sensor recognition sites. However, its study is confounded by an unusually strong influence of the underlying substrate. In this paper, we show a stark difference in the rate of electron transfer chemistry with aryl diazonium salts on monolayer graphene supported on a broad range of substrates. Reactions proceed rapidly when graphene is on SiO_2 and Al_2O_3 (sapphire), but negligibly on alkyl-terminated and hexagonal boron nitride (hBN) surfaces. The effect is contrary to expectations based on doping leve…
As the development of atom scale devices transitions from novel, proof-of-concept demonstrations to state-of-the-art commercial applications, automated assembly of such devices must be implemented. Here we present an automation method for the identification of defects prior to atomic fabrication via hydrogen lithography using deep learning. We trained a convolutional neural network to locate and differentiate between surface features of the technologically relevant hydrogen-terminated silicon surface imaged using a scanning tunneling microscope. Once the positions and types of surface features…
We report on the patterning and reduction of graphene-oxide films by holographic lithography. Light reduction can be used to engineer low-cost graphene-based devices by performing a local conversion of insulating oxide into the conductive graphene. In this work, computer generated holograms have been exploited to realize complex graphene patterns in a single shot, differently from serial laser writing or mask-based photolithographic processes. The technique has been further improved by achieving speckle noise reduction: submicron and diffraction-limited features have been obtained. In addition…
Large scale graphene electronics desires lithographic patterning of narrow graphene nanoribbons (GNRs) for device integration. However, conventional lithography can only reliably pattern ~20nm wide GNR arrays limited by lithography resolution, while sub-5nm GNRs are desirable for high on/off ratio field-effect transistors (FETs) at room temperature. Here, we devised a gas phase chemical approach to etch graphene from the edges without damaging its basal plane. The reaction involved high temperature oxidation of graphene in a slightly reducing environment to afford controlled etch rate (\leq ~1…
It is promising to apply quantum-mechanically confined graphene systems in field-effect transistors. High stability, superior performance, and large-scale integration are the main challenges facing the practical application of graphene transistors. Our understandings of the adatom-graphene interaction combined with recent progress in the nanofabrication technology indicate that very stable and high-quality graphene nanostripes could be integrated in substrate-supported functionalized (hydrogenated or fluorinated) graphene using electron-beam lithography. We also propose that parallelizing a co…
We demonstrate control of magnetic domain structures in continuous FePd thin films by patterning their surfaces with plasma treatment. The Fe-oxide layer formed on the surface upon ambient exposure of the FePd alloy thin film grown on an Al$_2$O$_3$(0001) substrate was patterned into microstructures by e-beam lithography followed by O$_2$- or Ar-plasma treatment. Microscopic pinning of magnetic domain walls in the thin films is then observed by magneto-optic Kerr effect microscopy, with the magnetic field needed to reverse the magnetization of the plasma-treated areas being larger than that fo…
Colloidal lithography [1] is how patterns are reproduced in a variety of natural systems and is used more and more as an efficient fabrication tool in bio-, opto-, and nano-technology. Nanoparticles in the colloid are made to form a mask on a given material surface, which can then be transferred via etching into nano-structures of various sizes, shapes, and patterns [2,3]. Such nanostructures can be used in biology for detecting proteins [4] and DNA [5,6], for producing artificial crystals in photonics [7,8] and GHz oscillators in spin-electronics [9-14]. Scaling of colloidal patterning down t…
Surface-patterned ZnO thin films were fabricated by direct imprinting on ZnO sol and subsequent annealing process. The polymer-based ZnO sols were deposited on various substrates for the nanoimprint lithography and converted to surface-patterned ZnO gel films during the thermal curing nanoimprint process. Finally, crystalline ZnO films were obtained by subsequent annealing of the patterned ZnO gel films. The optical characterization indicates that the surface patterning of ZnO thin films can lead to an enhanced transmittance. Large-scale ZnO thin films with different patterns can be fabricated…
A generic process has been developed to grow nearly defect free arrays of (heterostructured) InP and GaP nanowires. Soft nanoimprint lithography has been used to pattern gold particle arrays on full 2 inch substrates. After lift-off organic residues remain on the surface, which induce the growth of additional undesired nanowires. We show that cleaning of the samples before growth with piranha solution in combination with a thermal anneal at 550 C for InP and 700 C for GaP results in uniform nanowire arrays with 1% variation in nanowire length, and without undesired extra nanowires. Our chemica…
Surfaces and interfaces of ferroelectric oxides exhibit enhanced functionality, and therefore serve as a platform for novel nano and quantum technologies. Experimental and theoretical challenges associated with examining the subtle electro-chemo-mechanical balance at metal-oxide surfaces have hindered the understanding and control of their structure and behavior. Here, we combine advanced electron-microscopy and first-principles thermodynamics methods to reveal the atomic-scale chemical and crystallographic structure of the surface of the seminal ferroelectric BaTiO3. We show that the surface …
Three-dimensional hierarchical ZnO films with lotus-leaf-like micro/nano structures were successfully fabricated via a biomimetic route combining sol-gel technique, soft lithography and hydrothermal treatments. PDMS mold replicated from a fresh lotus leaf was used to imprint microscale pillar structures directly into a ZnO sol film. Hierarchical ZnO micro/nano structures were subsequently fabricated by a low-temperature hydrothermal growth of secondary ZnO nanorod arrays on the micro-structured ZnO film. The morphology and size of ZnO hierarchical micro/nano structures can be easily controlled…
Light trapping photonic crystal (PhC) patterns on the surface of Si solar cells provides a novel opportunity to approach the theoretical efficiency limit of 32.3%, for light-to-electrical power conversion with a single junction cell. This is beyond the efficiency limit implied by the Lambertian limit of ray trapping 29%. The interference and slow light effects are harnessed for collecting light even at the long wavelengths near the Si band-gap. We compare two different methods for surface patterning, that can be extended to large area surface patterning: 1) laser direct write and 2) step-&-rep…
Polymer-free Assembly of Unencapsulated van der Waals Heterostructure Devices
University of California, Berkeley（加州大学伯克利分校）；Lawrence Berkeley National Laboratory（劳伦斯伯克利国家实验室）；Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory（加州大学伯克利分校与劳伦斯伯克利国家实验室卡弗里纳米科学能源研究所）；Bakar Institute of Digital Materials for the Planet, Division of Computing, Data Science, and Society, University of California Berkeley（加州大学伯克利分校计算、数据科学与社会学院巴卡尔地球数字材料研究所）
The monolithic integration of sub-micron quartz structures on silicon substrates is a key issue for the future development of telecommunication to the GHz frequencies. Here we report unprecedented large-scale fabrication of ordered arrays of piezoelectric epitaxial quartz nanostructures on silicon substrates by the combination of soft-chemistry and three cost effective lithographic techniques: (i) laser transfer lithography, (ii) soft nanoimprint lithography on Sr-doped SiO2 sol-gel thin films and (iii) self-assembled SrCO3 nanoparticles reactive nanomasks. Epitaxial α-quartz nanopillars with …
We present an innovative method of selective epitaxial growth of few layers graphene (FLG) on a pre-patterned SiC substrate. The methods involves, successively, the sputtering of a thin AlN layer on top of a mono-crystalline SiC substrate and, then, patterning it with e-beam lithography (EBL) and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ~1582 cm-1 in the AlN-free areas is used to validate the concept, it gives absolute evidence of the selective FLG growth.
In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ with finely-tuned bulk stoichiometries are good candidates for realizing ideal 3D TI behavior due to their bulk insulating character. However, despite its insulating bulk in transport experiments, the surface region of Bi$_{2-x}$Sb$_{x}$Te$_{3-y}$Se$_{y}$ crystals cleaved in ultrahigh vacuum also exhibits occupied stat…
Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 - 350 C and …
The development of epitaxy techniques for localized growth of crystalline silicon nanofilms and nanostructures has been crucial to recent advances in electronics and photonics. A precise definition of the crystal growth location, however, requires elaborate pre-epitaxy processes for substrate patterning. Our molecular dynamics simulations reveal that homoepitaxial silicon nanofilms can be directly deposited by a crystalline silicon tip rubbing against the substrate, thus enabling geometrically controlled crystal growth with no need for substrate pre-patterning. We name this solid-phase epitaxi…
Maskless Electron Beam-Induced Etching of Diamond in Air: A Secondary Electron-Driven Mechanism
Univ. Grenoble Alpes, CNRS, Grenoble INP, Institut Neel（格勒诺布尔阿尔卑斯大学、法国国家科学研究中心、格勒诺布尔理工学院、内尔研究所）；Institute of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba（筑波大学纯科学与应用科学学院应用物理研究所）；Japanese-French Laboratory for Semiconductor Physics and Technology J-FAST（日法半导体物理与技术联合实验室（J-FAST））；CNRS-Nantes Université-Institut des Matériaux de Nantes Jean Rouxel, IMN（法国国家科学研究中心-南特大学-南特让·鲁克塞尔材料研究所）
