氦离子对石墨烯的精密切割与图案化
Precision Cutting and Patterning of Graphene with Helium Ions
摘要：
我们报告使用氦离子显微镜配置为光刻纳米级图案化的石墨烯。氦离子光刻是一种直写光刻工艺，与传统的聚焦离子束图案化相当，没有抗蚀剂或其他材料接触样品表面。在本申请中，使用氦离子切割Si/SiO2衬底上的石墨烯样品，其中计算机控制对准、图案化和曝光。一旦确定了合适的束剂量，就可以获得锐利的边缘轮廓和干净的蚀刻，对样品几乎没有明显的损伤或掺杂。该技术提供了与石墨烯兼容的快速光刻，具有约15 nm的特征尺寸。
英文摘要：
We report nanoscale patterning of graphene using a helium ion microscope configured for lithography. Helium ion lithography is a direct-write lithography process, comparable to conventional focused ion beam patterning, with no resist or other material contacting the sample surface. In the present application, graphene samples on Si/SiO2 substrates are cut using helium ions, with computer controlled alignment, patterning, and exposure. Once suitable beam doses are determined, sharp edge profiles and clean etching are obtained, with little evident damage or doping to the sample. This technique provides fast lithography compatible with graphene, with ~15 nm feature sizes.
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