基于SrTiO₃的二维电子气的无光刻直接原子层加工图案化
Lithography-free patterning of SrTiO$_3$-based two-dimensional electron gases using direct atomic layer processing
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中文总结 AI 辅助
该研究开发了一种无光刻的直接原子层加工技术，可在SrTiO₃衬底上制备二维电子气，其性能与传统方法相当，且工艺简单、成本低、兼容工业，适用于器件制备与输运研究。
中文摘要 AI 辅助
我们提出了一种可扩展且无光刻的策略，通过磁控溅射沉积Al，在TiO₂图案化的SrTiO₃(100)衬底上实现二维电子气（2DEG）。采用直接原子层加工沉积的15 nm厚TiO₂层来空间限定导电区域，无需生长后微加工即可直接进行输运测量。沉积Al后会形成绝缘AlOₓ覆盖层，未被TiO₂图案覆盖的区域会在SrTiO₃中产生氧空位，这些氧空位作为电子供体，填充Ti 3d导带，在界面处形成受限的2DEG。磁输运测量显示，其面载流子密度约为5-7×10¹³ cm⁻²，与脉冲激光沉积制备的SrTiO₃基异质结构的典型值相当，且具有有效的静电可调性。本研究展示了一种简单、低成本且兼容工业的氧化物2DEG制备路线，为可扩展器件制备和界面输运研究提供了通用平台。
英文摘要
We present a scalable and lithography-free strategy for the realization of a two-dimensional electron gas (2DEG) in TiO$_2$-patterned SrTiO$_3$ (100) via Al deposition using magnetron sputtering. A 15 nm thick TiO$_2$ layer, deposited by direct atomic layer processing, is employed to spatially define the conducting regions, enabling direct transport measurements without post-growth microfabrication. Upon Al deposition, an insulating AlO$_x$ overlayer is formed, and the region lacking the TiO$_2$ pattern leads to the creation of oxygen vacancies in SrTiO$_3$. These oxygen vacancies act as electron donors, populating the Ti 3$d$ conduction bands and giving rise to a confined 2DEG at the interface. Magneto-transport measurements reveal a sheet carrier density on the order of $\approx5-7\times10^{13}$ cm$^{-2}$, comparable to values typically achieved in pulsed laser deposition-grown SrTiO$_3$-based heterostructures, along with effective electrostatic tunability. This work demonstrates a simple, cost-effective, and industry-compatible route for engineering oxide 2DEGs, providing a versatile platform for scalable device fabrication and interfacial transport studies.
