基于氧化物薄膜光致氧化还原图案化的无光刻胶光刻技术

中文摘要 AI 辅助

纳米器件的图案化光刻通常依赖于光刻胶、湿法处理和多步图案转移流程，这些工艺带来了环境和尺寸缩放的限制。在还原气氛下，对(Ni,Co)1+2xTi1-xO3进行聚焦激光辐照可驱动局部氧脱除，直接将绝缘氧化物转化为嵌入的金属特征，无需刻蚀或化学处理。在此，我们展示了一种基于(Ni0.4Co0.6)3O3（x=1）薄膜中光致氧化还原转变的无光刻胶图案化方法。我们的结果表明，该转变具有自限性，因为新生成的金属相具有高光吸收性，限制了能量的进一步渗透并约束了还原前沿，从而产生导电层，其电学性能可与块体金属相媲美。这种可逆的、保持取向的转变是拓扑氧化还原过程的特征，使得无需光刻胶即可实现直接纳米级图案化。该过程可通过再氧化实现可逆，并与标准半导体晶圆衬底兼容。文中还讨论了Ti作为还原抑制剂的作用。这些结果确立了基于可控氧化还原化学的直接纳米图案化路径，为功能薄膜材料提供了一种传统光刻的潜在替代方案。

英文摘要

Lithographic patterning of nanoscale devices typically depends on photoresists, wet processing and multistep pattern-transfer workflows that impose both environmental and scaling constraints. Focused laser irradiation of (Ni,Co)1+2xTi1-xO3 under a reducing atmosphere drives localized oxygen removal, directly converting the insulating oxide into embedded metallic features without etching or chemical processing. Here we demonstrate a photoresist-free patterning method based on light-induced redox transformations in (Ni0.4Co0.6)3O3 (x = 1) thin films. Our results indicate that the transformation is self-limiting, as the high optical absorption of the emerging metallic phase restricts further energy penetration and confines the reduction front, producing conductive layers with electrical properties comparable to bulk metals. This reversible, orientation-preserving transformation is characteristic of a topotactic redox process, enabling direct nanoscale patterning without photoresists. The process is reversible through re-oxidation and is compatible with standard semiconductor wafer substrates. The role of Ti as a reduction inhibitor is discussed. These results establish a route to direct nanoscale patterning based on controlled redox chemistry, offering a potential alternative to conventional lithography for functional thin-film materials.

发表机构

• Reciprocal Engineering – RE Oy
• Center for Nanophase Materials Sciences, Oak Ridge National Laboratory（橡树岭国家实验室纳米相材料科学中心）

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