We have developed a new magnetoelectric material based on Ga doped α-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at room temperature and showing magneto-electric properties. The experimental results of electric field controlled magnetic state provided a direct evidence of room temperature magnetoelectric coupling in Ga doped α-Fe2O3 system. Interestingly, (un-doped) α-Fe2O3 system does not exhibit any electric field controlled magnetic exchange bias shift, but Ga doped α-Fe2O3 system has shown an extremely high electric field induced magnetic exchange bias shift up to the value of 1120 Oe (positive). On the other hand, in a first time, we report the electric field controlled magnetic state switching both in α-Fe2O3 and in Ga doped α-Fe2O3 systems. The switching of magnetic state is highly sensitive to ON and OFF modes, as well as to the change of polarity of applied electric voltage during in-field magnetic relaxation experiments. The switching of magnetic state to upper level for positive electric field and to down level for negative electric field indicates that electric and magnetic orders are coupled in the Ga doped hematite system. Such material is of increasing demand in today for multifunctional applications in next generation magnetic sensor, switching, non-volatile memory and spintronic devices.
We synthesized bismuth - cobalt oxide doped by erbium with general formula Bi3-xErxCoO3-y. Compound has structure of delta-form bismuth oxide. Magnetic properties of the compound were measured by Faraday's method using quartz scales in the temperature range of 80-500 K. The magnetic susceptibility and effective magnetic moment were calculated.
II-oxide and III-nitride semiconductors doped by nonmagnetic 2p light elements are investigated as potential dilute magnetic semiconductors (DMS). Based on our first-principle calculations, nitrogen doped ZnO, carbon doped ZnO, and carbon doped AlN are predicted to be ferromagnetic. The ferromagnetism of such DMS materials can be attributed to a p-d exchange-like p-p coupling interaction which is derived from the similar symmetry and wave function between the impurity (p-like t_2) and valence (p) states. We also propose a co-doping mechanism, using beryllium and nitrogen as dopants in ZnO, to …
An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any further post-deposition annealing treatment of the grown films. The developed method allows to grow thin films at low substrate temperature that prevents them from the considerable loss of their intrinsic electrical and optical properties. The influence of deposition parameters on the electrical and optical parameters of the undoped and the indium doped ZnO th…
Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface.
In this work we present a detailed Raman scattering investigation of zinc oxide and aluminum-doped zinc oxide (AZO) films characterized by a variety of nanoscale structure and morphology and synthesized by pulsed laser deposition (PLD) under different oxygen pressure conditions. The comparison of Raman data for pure ZnO and AZO films with similar morphology at the nano/mesoscale allows to investigate the relation between Raman features (peak or band positions, width, relative intensity) and material properties such as local structural order, stoichiometry and doping. Moreover Raman measurement…
Thin films of thulium and ytterbium-doped titanium oxide were grown by metal-organic spray pyrolysis deposition from titanium(IV)oxide bis(acetylacetonate), thulium(III) tris(2,2,6,6-tetramethyl-3,5-heptanedionate) and ytterbium(III) tris(acetylacetonate). Deposition temperatures have been investigated from 300°C to 600°C. Films have been studied regarding their crystallity and doping quality. Structural and composition characterisations of TiO2:Tm,Yb were performed by electron microprobe, X-ray diffraction and Fourier transform infrared spectroscopy. The deposition rate can reach 0.8 \mum/h. …
Magnetic oxide semiconductors, oxide semiconductors doped with transition metal elements, are one of the candidates for a high Curie temperature ferromagnetic semiconductor that is important to realize semiconductor spintronics at room temperature. We review in this paper recent progress of researches on various magnetic oxide semiconductors. The magnetization, magneto-optical effect, and magneto-transport such as anomalous Hall effect are examined from viewpoint of feasibility to evaluate the ferromagnetism. The ferromagnetism of Co-doped TiO2 and transition metal-doped ZnO is discussed.
Nickel oxide, in particular in its doped, semiconducting form, is an important component of several optoelectronic devices. Doping NiO is commonly achieved either by incorporation of lithium, which readily occupies Ni sites substitutionally, producing the Li$_{\text{Ni}}$ acceptor, or by supplying reactive oxygen species during NiO film deposition, which leads to the formation of Ni vacancies (V$_{\mathrm{Ni}}$). However, the energetic position of these acceptors in the NiO band gap has not been experimentally determined until today. In this work, we close this knowledge gap by studying rectif…
Based on first-principles calculation, it has been predicted that the magnetic anisotropy energy (MAE) in Co-doped ZnO (Co:ZnO) depends on electron-filling. Results show that the charge neutral Co:ZnO presents a "easy plane" magnetic state. While modifying the total number of electrons, the easy axis rotates from in-plane to out-of-plane. The alternation of the MAE is considered to be the change of the ground state of Co ion, resulting from the relocating of electrons on Co d-orbitals with electron-filling.
We present measurements of electrical resistivity, thermal conductivity and thermopower of polycrystalline Sr-doped LaCoO3 with composition La0.95Sr0.05CoO3. Our data show that the investigated compound exhibits a very respectable room temperature thermoelectric figure of merit value of 0.18. Our results not only show that oxides are promising candidates for thermoelectric cooling applications, but also point towards the need for careful theoretical calculations that will serve as a guide in producing the next generation of thermoelectric materials.
Clean hydrogen production through efficient and cost-effective electrochemical water splitting is highly promising to meeting future global energy demands. The design of Earth-abundant materials with both high activity for hydrogen evolution reaction (HER) and electrochemical stability in both acidic and alkaline environments summarize the outcomes needed for practical applications. Here, we report a non-noble 3d metal Cl-chemical doping of liquid phase exfoliated single/few-layer flakes of MoSe2 for creating MoSe2 nanoflakes/3d metal oxide-hydr(oxy)oxide hybrid HER-catalysts. We propose that …
We report a surfactant assisted synthesis of Mn doped ZnO polycrystalline samples showing robust room temperature ferromagnetism as characterized by X-ray diffraction analysis, Transmission Electron Microscopy, Electron Paramagnetic Resonance and DC magnetization mearurements. This surfactant assisted synthesis method, developed by us, is found to be highly reproducible. Further, it can also be extended to the synthesis of other transition metal doped ZnO.
We observe remarkably strong room temperature ferromagnetism (~1.5 Bohr Magneton/Mn) in optically transparent Mn(II)-doped indium tin oxide (ITO) films. The nanocrystalline films with average grain size 10-22 nm and thickness 150-350 nm are prepared by sol-gel coating technique on sodalime silica glass substrate. The ferromagnetic property is, of course, weak for films deposited on pure silica glass substrate. The structural parameters of the films appear to be governing the magnetic property strongly which vary appreciably depending on the substrate. The observation of room temperature ferrom…
Perovskite photovoltaics (PVs) have attracted attention because of their excellent power conversion efficiency (PCE). Critical issues related to large area PV performance, reliability and lifetime need to be addressed. Here, we show that doped metal oxides can provide ideal electron selectivity, improved reliability and stability for perovskite PVs. We report p-i-n perovskite PVs with device areas ranging from 0.09cm2 to 0.5cm2 incorporating a thick aluminum doped zinc oxide (AZO) electron selective contact with hysteresis-free PCE of over 13% and high fill factor values in the range of 80%. A…
The local magnetic moment of Ti:ZnO is calculated from first principles by using the corrected-band-gap scheme (CBGS). The results shows that the system is magnetic with the magnetization of 0.699 $μ_B$ per dopant. The origin of the local magnetic moment is considered to be the impurity band partially occupied by the donor electrons in the conduction band. Further, the impacts of applying Hubbard U to Ti-d orbital on the magnetic moment have been investigated.
We report room temperature ferromagnetism in boron-doped ZnO both experimentally and theoretically. The single phase Zn1-xBxO films deposited under high oxygen pressure by pulsed-laser deposition show ferromagnetic behavior at room temperature. The saturation magnetization increases monotonously from 0 to 1.5 emu/cm3 with the increasing of B component x from 0 to 6.8%. The first-principles calculations based on density functional theory demonstrate that the ferromagnetism in B-doped ZnO originates from the induced magnetic moments of oxygen atoms in the nearest neighbor sites to the B-Zn vacan…
In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these uncommon materials typically display insignificant values of the remanent moment in one of the ferroic orders or are complex multicomponent oxides which will be very challenging to integrate in devices. Here we report on the strategy to stabilize the metastable epsilon-Fe2O3 in thin film form, and we show that besides its already known ferrimagnetic nature, the fil…
Hematite Fe$_2$O$_3$ seed layers are shown to constitute a pathway to prepare highly conductive transparent tin-doped indium oxide (ITO) thin films by room temperature magnetron sputtering. Conductivities of up to $σ= 3300\,{\rm S/cm}$ are observed. The improved conductivity is not restricted to the interface but related to an enhanced crystallization of the films, which proceeds in the rhombohedral phase.
Ferromagnetism above room temperature was observed in Cr-doped hydrogenated amorphous silicon films deposited by rf magnetron-sputtering. Structure analysis reveals that films are amorphous without any detectable precipitates up to the solubility limit 16 atomic percentages of Cr. Experimental results suggest that hydrogenation has a dramatic influence on magnetic properties, electrical conductivity and carrier concentration in the thin films. Pronounced anomalous Hall effect and magnetization curve both suggest the origin of the ferromagnetism may arises from percolation of magnetic polarons.
Fulfillment of the promise of transparent electronics has been hindered until now largely by the lack of semiconductors that can be doped p-type in a stable way, and that at the same time present high hole mobility and are highly transparent in the visible spectrum. Here, a high-throughput study based on first-principles methods reveals four oxides, namely X2SeO2, with X = La, Pr, Nd, and Gd, which are unique in that they exhibit excellent characteristics for transparent electronic device applications-i.e., a direct band gap larger than 3.1 eV, an average hole effective mass below the electron…
We have developed a simple, surfactant assisted synthesis route for the preparation, in gram quantities, of Co and Li doped ZnO nanocrystalline samples showing robust room temperature ferromagnetism. Our studies show that RTF is intrinsic to Zn0.85Co0.05Li0.10O and not due to any segregated secondary phases. In addition, it has been shown that the defects play an important role in activating RTF in these oxide systems. This also provide an explanation for the widely varying results observed in the literature. The method can also be extended for the synthesis of other transition metal doped ZnO…
The possibility to induce long range ferromagnetic order by doping oxides with transition metal ions has become a very exciting challenge in the last decade. Theoretically, it has been claimed that Mn doped ZrO$_2$ could be a very promising spintronic candidate and that high critical temperatures could be already achieved even for a low Mn concentration. Some experiments have reported room temperature ferromagnetism (RT-FM) whilst some others only paramagnetism. When observed, the nature of RT-FM appears to be controversial and not clearly understood. In this study, we propose to clarify and s…
We review pitfalls in recent efforts to make a conventional semiconductor, namely ZnO, ferromagnetic by means of doping with transition metal ions. Since the solubility of those elements is rather low, formation of secondary phases and the creation of defects upon low temperature processing can lead to unwanted magnetic effects. Among others, ion implantation is a method of doping, which is highly suited for the investigation of those effects. By focussing mainly on Fe, Co or Ni implanted ZnO single crystals we show that there are manifold sources for ferromagnetism in this material which can …
The modern multi-polaron theory predicts a polaronic Fermi-liquid state, but such a state has not been unambigously confirmed by experiment so far. Here we report theoretical and experimental studies of the isotope effects on the low temperature kinetic properties of the doped ferromagnetic manganites. Our results provide clear evidence for a novel polaronic Fermi-liquid state in doped oxides.
Tin doped indium oxide (ITO) thin films are being used extensively as transparent conductors in several applications. In the present communication, we report the electrical transport in DC magnetron sputtered ITO thin films in low temperatures (25-300 K). The low temperature Hall effect and resistivity measurements reveal that the ITO thin films are moderately dis-ordered (kfl~1) and degenerate semiconductor. The transport of charge carriers in these disordered ITO thin films takes place via the de-localized states. The disorder effects lead to the well- known metal-insulator transition; this …
Recently, two-dimensional materials and nanoparticles with robust ferromagnetism are even of great interest to explore basic physics in nanoscale spintronics. More importantly, room-temperature magnetic semiconducting materials with high Curie temperature is essential for developing next-generation spintronic and quantum computing devices. Here, we develop a theoretical model on the basis of density functional theory calculations and the Ruderman-Kittel-Kasuya-Yoshida theory to predict the thermal stability of two-dimensional magnetic materials. Compared with other rare-earth (dysprosium (Dy) …
Multiferroic materials, in which ferroelectric and magnetic ordering coexist, are of fundamental interest for the development of multi-state memory devices that allow for electrical writing and non-destructive magnetic read-out operation. The great challenge is to create multiferroic materials that operate at room-temperature and have a large ferroelectric polarization P. Cupric oxide, CuO, is promising because of its large P ~ 10^{2} μC.m^{-2}, but is unfortunately only multiferroic in a temperature range of 20 K, from 210 to 230 K. Here, using a combination of density functional theory and M…
Thin films of Zn2+ doped cupric oxide (CuO) were synthesized using spin coating technique starting from a solution with Cu and Zn. The speed of spin coating and time duration were varied to fabricate a film with required uniform thickness. Samples were subsequently annealed in air at different annealing temperatures to crystallize the phase of CuO. Doping concentration of Zn2+ was varied up to weight percentage of 10%. Structural properties of samples were determined using X-ray diffraction technique. Particle size, dislocation density and strain at different doping concentrations were determi…
We report an observation of room temperature magnetodielectric (RTMD) effect in Mn doped LaGaO3. Results of frequency dependent magnetoresistance (FDMR) measurements discards the possibility of any magnetoresistive contribution in the observed MD effect. The intrinsic nature of MD coupling has been validated/evidenced by means of magnetic field dependent Raman spectroscopy and explained in terms of modified volume strain governed by magnetic field induced rerotation of spin coupled Mn-orbitals. Ultimately, present RTMD effect is attributed to magneto-compression/magnetostriction associated wit…
Structural and magnetic properties have been studied for polycrystalline Zn_1-xMn_xO (x=0.02, 0.03, 0.05). Low-temperature (~500 oC) synthesis leaves unreacted starting ZnO and manganese oxides. Contrary to a recent report, no bulk ferromagnetism was observed for single-phase materials synthesized in air at temperatures above 900 oC. Single-phase samples show paramagnetic Curie-Weiss behavior.
Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeReO6. In contrast to the known ferromagnetic metallic phase in stoichiometric Sr2FeReO6, a FMI state with a high Curie temperature (Tc~400 K) and a large saturation magnetization (MS~1.8 μB/f.u.) is fo…
TiO$_2$ anatase doped with Co has been recently reported to exhibit room-temperature ferromagnetism. $Ab$ $initio$ study on substitutional Co doping, however, yielded much larger magnetic moment for Co than experiment. Our calculations based on density-functional theory show that the substitutional Co ions incorporated into TiO$_2$ anatase tend to cluster and then the neighboring interstitial tetrahedral sites become energetically favorable for Co to reside, yielding a local environment more like Co$_3$O$_4$ than CoTiO$_3$. The interstitial Co destroys the spin-polarization of the surrounding …
Heterostructures of Co-doped ZnO and Permalloy were investigated for their static and dynamic magnetic interaction. The highly Co-doped ZnO is paramagentic at room temperature and becomes an uncompensated antiferromagnet at low temperatures, showing a narrowly opened hysteresis and a vertical exchange bias shift even in the absence of any ferromagnetic layer. At low temperatures in combination with Permalloy an exchange bias is found causing a horizontal as well as vertical shift of the hysteresis of the heterostructure together with an increase in coercive field. Furthermore, an increase in t…
We report magnetism in carbon doped ZnO. Our first-principles calculations based on density functional theory predicted that carbon substitution for oxygen in ZnO results in a magnetic moment of 1.78 $μ_B$ per carbon. The theoretical prediction was confirmed experimentally. C-doped ZnO films deposited by pulsed laser deposition with various carbon concentrations showed ferromagnetism with Curie temperatures higher than 400 K, and the measured magnetic moment based on the content of carbide in the films ($1.5 - 3.0 μ_B$ per carbon) is in agreement with the theoretical prediction. The magnetism …
The prospect of 2-dimensional electron gases (2DEGs) possessing high mobility at room temperature in wide-bandgap perovskite stannates is enticing for oxide electronics, particularly to realize transparent and high-electron mobility transistors. Nonetheless only a small number of studies to date report 2DEGs in BaSnO3-based heterostructures. Here, we report 2DEG formation at the LaScO3/BaSnO3 (LSO/BSO) interface with a room-temperature mobility of 60 cm2/V s at a carrier concentration of 1.7x1013 cm-2. This is an order of magnitude higher mobility at room temperature than achieved in SrTiO3-ba…
Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi-functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra-small dopants, e.g. H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal-insulator transition. Here, we report an observation of bipolar conduction accompanied by a giant positive magnetoresistance in D-doped metallic Ti oxide (TiOxDy) films. To overcome the challenges in …
The existence of long range magnetic order in low dimensional magnetic systems, such as the quasi-two-dimensional (2D) van der Waals (vdW) magnets, has attracted intensive studies of new physical phenomena. The vdW Fe$_N$GeTe$_2$ ($N$ = 3, 4, 5; FGT) family is exceptional owing to its vast tunability of magnetic properties. Particularly, a ferromagnetic ordering temperature ($T_{\text{C}}$) above room temperature at $N$ = 5 (F5GT) is observed. Here, our study shows that, by nickel (Ni) substitution of iron (Fe) in F5GT, a record high $T_{\text{C}}$ = 478(6) K is achieved. Importantly, pervasiv…
Nickel oxide is a versatile p-type semiconducting oxide with many applications in opto-electronic devices, but high doping concentrations are often required to achieve necessary electrical conductivity. In contrast to many other transparent oxide semiconductors, even moderate levels of doping of NiO can lead to significant optical absorption in the visible spectral range, limiting the application range of the material. This correlation has been reported extensively in literature, but its origin has been unknown until now. This work combines experimental data on optical properties from a variet…
A promising material for hydrogen storage at room temperature-Al doped graphene was proposed theoretically by using density functional theory calculation. Hydrogen storage capacity of 5.13 wt% was predicted at T = 300 K and P = 0.1 Gpa with adsorption energy Eb = -0.260 eV/H2. This is close to the target of 6 wt% and satisfies the requirement of immobilization hydrogen with Eb of -0.2 ~ -0.4 eV/H2 at ambient temperature and modest pressure for commercial applications specified by U.S. Department of Energy. It is believed that the doped Al varies the electronic structures of both C and H2. The …
In this work we demonstrate comprehensive studies on graphene oxide (GO) and reduced graphene oxide (rGO) based saturable absorbers (SA) for mode-locking of Er-doped fiber lasers. The paper describes the fabrication process of both saturable absorbers and detailed comparison of their parameters. Our results show, that there is no significant difference in the laser performance between the investigated SA. Both provided stable, mode-locked operation with sub-400 fs soliton pulses and more than 9 nm optical bandwidth at 1560 nm center wavelength. It has been shown that GO might be successfully u…
The introduction of manganite buffer layers, La7/8Sr1/8MnO3 (LSMO) in particular, at the metallic interface between SrTiO3 (STO) and another band insulator suppresses the carrier density of the interfacial two-dimensional electron gas (2DEG) and improves significantly the electron mobility. However, the mechanisms underlying the extreme mobility enhancement remain elusive. Herein, we used 18O isotope exchanged SrTi18O3 as substrates to create 2DEG at room temperature with and without the LSMO buffer layer. By mapping the oxygen profile across the interface between STO18 and disordered LaAlO3 o…
We report on the first demonstration of generating a spin current and spin transport in a highly doped Si channel at room temperature (RT) using a four-terminal lateral device with a spin injector and a detector consisting of an Fe/MgO tunnel barrier. Spin current was generated using a nonlocal technique, and spin injection signals and Hanle-type spin precession were successfully detected at 300 K, thus proving spin injection with the elimination of spurious signals. The spin diffusion length and its lifetime at RT were estimated to be 0.6 ïm and 1.3 ns by the Hanle-type spin precession, respe…
Research into developing dual modality probes enabled for magnetic resonance imaging (MRI) and positron emission tomography (PET) has been on the rise recently due to the potential to combine the high resolution of MRI and the high sensitivity of PET. Current synthesis techniques for developing multimodal probes is largely hindered in part by prolonged reaction times during radioisotope incorporation - leading to a weakening of the radioactivity. Along with a time-efficient synthesis, the resulting products must fit within a critical size range (between 20-100nm) to increase blood retention ti…
The main obstacles in realizing diluted magnetic oxide (DMO) in spintronics are the unknown electronic structures associated with its high TC ferromagnetism and spin polarized current and how to manipulate desired electronic structures by fabrication techniques. We demonstrate that fine-tuned electronic structures and band structures can be modified to initiate DMO properties. Interestingly, in the semiconducting state, the doped Co ions and oxygen vacancies contribute non-negligible magnetic moments; and the magnetic coupling between these moments is mediated by the localized carriers via hig…
An electrospun membrane for vascular stent coating made of 2-methacryloyloxyethyl phosphorylcholine and butyl methacrylate copolymer (MPC-co-BMA), also known as (PMB), reinforced with functionalized and nitrogen doped reduced graphene oxide (f-NrGO) is presented. This membrane due to the nitrogen doped reduced graphene oxide (NrGO) negative electric charge has the capacity to repeal low density lipoproteins (LDL), which under specific conditions are the main cause of atherosclerotic disease. The NrGO functionalization process is detailed, as it creates strong bonds between NrGO and PMB, avoidi…
La-doped SrSnO3 (LSSO) is known as one of deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of ~4.6 eV. Since LSSO can be grown heteroepitaxially on more wide bandgap substrates such as MgO (Eg ~7.8 eV), LSSO is considered to be a good candidate as a DUV-transparent electrode. However, the electrical conductivity of LSSO films are below 1000 S cm^-1, most likely due to the low solubility of La ion in the LSSO lattice. Here we report that high electrically conducting (>3000 S cm^-1) LSSO thin films with an energy bandgap of ~4.6 eV can be fabricated by pulsed laser dep…
Emerging technologies are demanding innovative properties of glasses. In this work, Cerium Oxide is used as a dopant in Zinc-Tellurite samples and its effects on the properties of the glass are investigated. Thermal analysis and x-ray diffraction confirmed the amorphous nature of all samples. The bivalent nature of Cerium is investigated spectroscopically and a strong redshift induced by the dopant is attributed to charge transfers O$^{2-}{\rightarrow}$Ce$^{4+}$, while the 4f-5d transition of Ce$^{3+}$ could not be identified in absorption or luminescence measurements. Yellow/red (570/650 nm) …
The problem of detecting the ability of some metal oxides as photocatalysts is receiving considerable attention in the world. The studied zinc oxide is considered as one of the most utilized semiconductors, due to its direct band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. The characteristic formulation of Copper doped zinc oxide is implemented to obtain an improved adsorption kinetics and photocatalytic activity of zinc oxide photocatalyst capable of evolving estimated photoluminescence (PL) spectra of zinc oxide nanoparticles to explore the effect of Copp…
We report herein that the carrier mobility of the 2%-La-doped BaSnO3 (LBSO) films on (001) SrTiO3 and (001) MgO substrates strongly depends on the thickness whereas it is unrelated to the lattice mismatch (+5.4% for SrTiO3, -2.3% for MgO). Although we observed large differences in the lattice parameters, the lateral grain size (~85 nm for SrTiO3, ~20 nm for MgO), the surface morphology and the density of misfit dislocations, the mobility increased almost simultaneously with the thickness in both cases and saturated at ~100 cm2 V-1 s-1, together with the approaching to the nominal carrier conce…
We demonstrate generation of linearly polarized pulses from a passively Q-switched Erbium-doped fiber laser. The cavity was designed using only polarization maintaining (PM) fibers and components, resulting in linearly polarized output beam with degree of polarization (DOP) at the level of 97.6%. Reduced graphene oxide (rGO) was used as a saturable absorber for Q-switched operation. The laser was capable of delivering 1.85us pulses with 125nJ pulse energy at 115kHz repetition rate.
The nature of the often reported room temperature ferromagnetism in transition metal doped oxides is still a matter of huge debate. Herein we report on room temperature ferromagnetism in high quality Co-doped ZnO (Zn1-xCoxO) bulk samples synthesized via standard solid-state reaction route. Reference paramagnetic Co-doped ZnO samples with low level of structural defects are subjected to heat treatments in a reductive atmosphere in order to introduce defects in the samples in a controlled way. A detailed structural analysis is carried out in order to characterize the induced defects and their co…
Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T=20-300 C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x=10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like elec…
Defect pyrochlore oxides have attracted a great interest as promising luminescent materials due to their flexible composition and high electron/hole mobility. In this work, we investigate the structural and electronic properties of lanthanide-doped (Ln) defect pyrochlore oxides \ce{KNbWO6}:0.125Ln$^{3+}$ by using first-principles calculations. We perform structural optimizations of various defect pyrochlore models and calculate their electronic structures, revealing that hydration has a significant influence on both local symmetry around Eu$^{3+}$ ion and band structures with an alteration of …
The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal $β$-Ga$_2$O$_3$ is experimentally determined by mid-infrared optical Hall effect to be $(0.284\pm0.013)m_{0}$ combining investigations on ($010$) and ($\bar{2}01$) surface cuts. This result falls within the broad range of values predicted by theoretical calculations for undoped $β$-Ga$_2$O$_3$. The result is also comparable to recent density functional calculations using the Gaussian-attenuation-Perdue-Burke-Ernzerhof hybrid density functional, which predict an average effective mass of …
Internal friction in oxide thin films imposes a critical limitation to the sensitivity and stability of ultra-high finesse optical cavities for gravitational wave detectors. Strategies like doping or creating nanolaminates are sought to introduce structural modifications that reduce internal friction. This work describes an investigation of the morphological changes SiO2/Ta2O5 and TiO2/Ta2O5 nanolaminates undergo with annealing and their impact on room temperature internal friction. It is demonstrated that thermal treatment results in a reduction of internal friction in both nanolaminates, but…
High thermoelectric performance in oxides requires stable conductive materials that have suitable band structures. Here we show based on an analysis of the thermopower and related properties using first-principles calculations and Boltzmann transport theory that hole doped Cu2O may be such a material. We find that hole-doped Cu2O has a high thermopower of above 200 microV/K even with doping levels as high as 5.5x10 20 cm-3 at 500 K, mainly attributed to the heavy valence bands of Cu2O. This is reminiscent of the cobaltate family of high performance oxide thermoelectrics and implies that hole-d…
