掺锶氧化铟的宏观和微观性质
Macro- and microscopic properties of strontium doped indium oxide
摘要：
针对不同掺杂水平的材料，在不同温度（T=20-300 C）和环境大气含量（包括湿度和低压）下，研究了多晶锶掺杂氧化铟In 2 O3：（SrO）x的固态合成和电导率变化的物理机制。这些化合物的气敏能力以及样品电阻似乎增加了4个和8个数量级，分别与掺杂水平从零增加到x= 10%。由于掺杂的电导变化解释了两种机制：受体一样的电活性的Sr作为一个点缺陷和外观的一个额外的相SrIn 2 O 4。高水平（x=10%）掺杂样品的一个不寻常的性质是在不太高的温度（100-200 ℃）下与环境大气进行非常大和快速的氧交换的可能性。这一特点是由微晶表面的脆性结构解释的。脆性结构以晶粒近表面层的高电导为代价提供了样品从高电阻状态到低电阻状态的相对快速的转变。通过对缺氧样品表面的电扩散过程进行显微镜研究，可以估算出室温下易碎表面层中氧空位的扩散系数为3 × 10 ^（-13）cm ^2/s，比已知的非晶氧化铟薄膜的扩散系数小一个数量级。
英文摘要：
Solid state synthesis and physical mechanisms of electrical conductivity variation in polycrystalline, strontium doped indium oxide In2O3:(SrO)x were investigated for materials with different doping levels at different temperatures (T=20-300 C) and ambient atmosphere content including humidity and low pressure. Gas sensing ability of these compounds as well as the sample resistance appeared to increase by 4 and 8 orders of the magnitude, respectively, with the doping level increase from zero up to x=10%. The conductance variation due to doping is explained by two mechanisms: acceptor-like electrical activity of Sr as a point defect and appearance of an additional phase of SrIn2O4. An unusual property of high level (x=10%) doped samples is a possibility of extraordinarily large and fast oxygen exchange with ambient atmosphere at not very high temperatures (100-200 C). This peculiarity is explained by friable structure of crystallite surface. Friable structure provides relatively fast transition of samples from high to low resistive state at the expense of high conductance of the near surface layer of the grains. Microscopic study of the electro-diffusion process at the surface of oxygen deficient samples allowed estimation of the diffusion coefficient of oxygen vacancies in the friable surface layer at room temperature as 3x10^(-13) cm^2/s, which is by one order of the magnitude smaller than that known for amorphous indium oxide films.
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