In recent years, various materials have been developed to reduce the reliance of industries on Indium, a primary component of transparent conducting oxides (TCOs) used in the current generation of devices. The leading candidates for indium free TCOs are strontium vanadates, niobates and molybdates -- strongly correlated perovskite systems that exhibit high intrinsic electrical conductivity and optimal transparency. In this work, we focus on the strontium niobate thin films and manipulate its optical conductivity by Ti doping, which shifts the plasma frequency and reduces electronic correlations. This allows us to achieve a low resistance for Ti doped SNO thin films, while maintaining a high transparency in the visible spectrum. We obtain the optimal figure-of-merit (FOM) of 10.3 ($10^{-3}Ω^{-1}$) for $x = 0.3$. This FOM significantly outperforms the optoelectronic capabilities of Tin-doped Indium oxide (ITO) and several other proposed transparent conductor materials. Our research paves the way for designing the next generation of transparent conductors, guided by insights from density-functional theory (DFT) and dynamical mean-field theory (DMFT).
Remarkable enhancement in crystalline perfection, Second Harmonic Generation Efficiency, Optical Transparency and laser damage threshold in KDP crystals by L-threonine doping
Effects of hole doping on the electronic and optical properties of transparent conducting copper iodide
碘化锌铜作为p型半导体在透明电子学和透明热电学中的应用引起了越来越多的关注。技术应用的关键一步是通过掺杂提高碘化铜（CuI）的导电性，而不会降低透明度。最近的一项高通量计算研究表明，碘位点上的硫族元素取代可以作为浅受体。根据计算预测，最近在实验室中实现了碘位点上的氧、硫和硒取代掺杂，然而，这表明在技术应用的道路上仍然存在一些实验挑战。我们在这里通过{ \it ab initio}计算研究了此类取代对CuI电子和光学性质的影响。我们的研究结果表明，硫和硒掺杂是最好的候选人，以获得一个可控的空穴浓度的增加，同时保持在可见光和高空穴迁移率的透明度。
Incorporating Si into Sb2Se3: Tailoring Optical Phase Change Materials via Nanocomposites
University of Maryland, College Park（马里兰大学帕克分校）；Institute of Research in Electronics and Applied Physics, University of Maryland, College Park（马里兰大学电子与应用物理研究所）；University of Illinois at Urbana-Champaign（伊利诺伊大学厄巴纳-香槟分校）；The University of Pittsburgh（匹兹堡大学）；MIT（麻省理工学院）；Maryland Quantum Materials Center, University of Maryland, College Park（马里兰大学帕克分校马里兰量子材料中心）
Copper Doped Zinc Oxide Nanocrystalline Thin Film: Growth, Characterization, Effect of annealing on Photocatalytic activity and electrical properties of irradiated film
Importance of strain reduction in improvement of optical transmission and conductance in Si4+ doped ZnO: a probable new moisture resistant Transparent Conductive Oxide
Limitations of In$_2$O$_3$ as a transparent conducting oxide
Sn掺杂的In $_2$ O $_3$或ITO是最广泛使用的透明导电氧化物。我们使用第一性原理计算来研究由于声子或带电缺陷介导的自由载流子吸收对其透明性的限制。我们发现，声子辅助的间接吸收的主要贡献是由于发射（而不是吸收）的声子，这解释了为什么该过程是相对不敏感的温度。这种间接吸收过程的波长依赖性可以用幂律来描述。由带电缺陷或杂质介导的间接吸收也是不可避免的，因为需要掺杂以获得导电性。在高载流子浓度下，通过自由载流子的筛选变得重要。我们发现当杂质浓度大于10 $^{20}$ cm $^{-3}$时，带电杂质辅助吸收大于声子辅助吸收。这两个过程的光子能量依赖性的差异可以通过能带结构效应来解释。
Computationally-driven, high throughput identification of CaTe and Li$_\textrm{3}$Sb as promising candidates for high mobility $p$-type transparent conducting materials
