用铟原子重构硅表面：Si（111）-（R7 $\times$ R3）-In的宏观超导电流
Macroscopic Superconducting Current through a Silicon Surface Reconstruction with Indium Adatoms: Si(111)-(R7$\times$R3)-In
摘要：
通过直接电子输运测量，在用In吸附原子重构的硅表面（Si（111）-（R7 xR 3）-In）上观察到了宏观的强超电流.超导转变表现为在2.8K以下出现零电阻态。$I-V$的特性表现出尖锐的和滞后的超导和正常状态之间的切换与定义明确的临界和再俘获电流。在1.8 K时，二维（2D）临界电流密度$J_\mathrm{2D,c}$估计高达$1.8 \ \mathrm{A/m}$. $J_\mathrm{2D,c}$的温度依赖性表明表面原子台阶起着强耦合约瑟夫森结的作用。
英文摘要：
Macroscopic and robust supercurrents are observed by direct electron transport measurements on a silicon surface reconstruction with In adatoms (Si(111)-(R7xR3)-In). The superconducting transition manifests itself as an emergence of the zero resistance state below 2.8 K. $I-V$ characteristics exhibit sharp and hysteretic switching between superconducting and normal states with well-defined critical and retrapping currents. The two-dimensional (2D) critical current density $J_\mathrm{2D,c}$ is estimated to be as high as $1.8 \ \mathrm{A/m}$ at 1.8 K. The temperature dependence of $J_\mathrm{2D,c}$ indicates that the surface atomic steps play the role of strongly coupled Josephson junctions.
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