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arXiv 1706.05484cond-mat.str-elcond-mat.mtrl-sci
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单层WS $_2$自旋劈裂价带中的电子-声子耦合

Electron-phonon coupling in the spin-split valence band of single layer WS$_2$

Nicki Frank Hinsche, Arlette S. Ngankeu, Kevin Guilloy, Sanjoy K. Mahatha, Antonija Grubišić Čabo, Marco Bianchi, Maciej Dendzik, Charlotte E. Sanders, Jill A. … 展开作者

Nicki Frank Hinsche, Arlette S. Ngankeu, Kevin Guilloy, Sanjoy K. Mahatha, Antonija Grubišić Čabo, Marco Bianchi, Maciej Dendzik, Charlotte E. Sanders, Jill A. Miwa, Harsh Bana, Elisabetta Travaglia, Paolo Lacovig, Luca Bignardi, Rosanna Larciprete, Alessandro Baraldi, Silvano Lizzit, Kristian Sommer Thygesen, Philip Hofmann

摘要:

不存在反转对称性导致半导体单层过渡金属二硫属化物如MoS $_2$或WS $_2$的上价带的强自旋-轨道分裂。这允许直接比较电子-声子耦合强度的状态,只有不同的自旋。本文利用第一性原理计算和角分辨光电发射研究了单层WS $_2$的价带顶的电子-声子耦合。的耦合强度被发现是显着不同的两个自旋分裂分支,与计算值$λ_K=$ 0.0021和0.40的上,下自旋分裂价带的独立层,分别。当包括涉及实验中存在的Au(111)衬底的散射过程时,这种差异有所减小,并且实验结果证实了强烈的分支依赖耦合强度。

英文摘要:

The absence of inversion symmetry leads to a strong spin-orbit splitting of the upper valence band of semiconducting single layer transition metal dichalchogenides such as MoS$_2$ or WS$_2$. This permits a direct comparison of the electron-phonon coupling strength in states that only differ by their spin. Here, the electron-phonon coupling in the valence band maximum of single-layer WS$_2$ is studied by first principles calculations and angle-resolved photoemission. The coupling strength is found to be drastically different for the two spin-split branches, with calculated values of $λ_K=$0.0021 and 0.40 for the upper and lower spin-split valence band of the free-standing layer, respectively. This difference is somewhat reduced when including scattering processes involving the Au(111) substrate present in the experiment and the experimental results confirm the strongly branch-dependent coupling strength.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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