To achieve high quality epitaxial thin films and heterostructures of transition metal oxides with atomically controlled interfaces, one critical requirement is the use of atomically flat single terminated oxide substrates since the atomic arrangements and the reaction chemistry of the topmost surface layer of substrates determine the growth and consequent properties of the overlying films. Achieving the atomically flat and chemically single terminated surface state of commercially available substrates, however, requires judicious efforts because the surface of as-received substrates is of chemically mixed nature and also often polar. In this review, we summarize the surface treatment procedures to accomplish atomically flat surfaces with single terminating layer for various metal oxide substrates. We particularly focus on the substrates with lattice constant ranging from 4.00 to 3.70 angstrom, as the lattice constant of most perovskite materials falls into this range. For materials outside the range, one can utilize the substrates to induce compressive or tensile strain on the films and explore new states not available in bulk. The substrates covered in this review, which have been chosen with commercial availability and, most importantly, experimental practicality as a criterion, are KTaO3, REScO3 (RE = Rare-earth elements), SrTiO3, La0.18Sr0.82Al0.59Ta0.41O3 (LSAT), NdGaO3, LaAlO3, SrLaAlO4, and YAlO3. Analyzing all the established procedures, we conclude that atomically flat surfaces with selective A- or B-site single termination would be obtained for most commercially available oxide substrates. We further note that this topmost surface layer selectivity would provide an additional degree of freedom in searching for unforeseen emergent phenomena and functional applications in epitaxial oxide thin films and heterostructures with atomically controlled interfaces.
We employ spin-polarized (SP) STM to study the spin-dependent tunneling between a magnetite (111) sample and an antiferromagnetic tip through a vacuum barrier at room temperature. Atomic scale STM images show significant magnetic contrast corresponding to variations in the local surface states induced by oxygen vacancies. The estimated variations in tunneling magnetoresistance (TMR) of 250% suggest that the spin-transport properties are significantly altered locally by the presence of surface defects.
We report on growth-mode transitions in the growth of SrRuO3 thin films on atomically flat Ti4+ single-terminated SrTiO3 (111) substrates, investigated by reflection high-energy electron diffraction and atomic force microscopy. Over the first ~9 unit cells, the dominant growth mode changes from island to layer-by-layer for the growth rate of 0.074 unit cells/sec and the growth temperature of 700 C. Moreover, in the course of growing SrRuO3 films, the governing growth mode of interest can be manipulated by changing the growth temperature and the growth rate, which change allows for the selectio…
The surface termination of (100)-oriented LaAlO3 (LAO) single crystals was examined by atomic force microscopy and optimized to produce a single-terminated atomically flat surface by annealing. Then the atomically flat STO film was achieved on a single-terminated LAO substrate, which is expected to be similar to the n-type interface of two-dimensional electron gas (2DEG), i.e., (LaO)-(TiO2). Particularly, that can serve as a mirror structure for the typical 2DEG heterostructure to further clarify the origin of 2DEG. This newly developed interface was determined to be highly insulating. Additio…
We demonstrate high-quality epitaxial germanium (Ge) films on a metallic silicide, Fe3Si, grown directly on a Ge(111) substrate. Using molecular beam epitaxy techniques, we can obtain an artificially controlled arrangement of silicon (Si) or iron (Fe) atoms at the surface on Fe3Si(111). The Si-terminated Fe3Si(111) surface enables us to grow two-dimensional epitaxial Ge films, whereas the Fe-terminated one causes the three-dimensional epitaxial growth of Ge films. The high-quality Ge grown on the Si-terminated surface has almost no strain, meaning that the Ge films are not grown on the low-tem…
We report that a deionized water etching and thermal annealing technique can be effective for preparing atomically-flat and singly-terminated surfaces of single crystalline SrTiO3 substrates. After a two-step thermal-annealing and deionized-water etching procedure, topography measured by atomic force microscopy shows the evolution of substrates from a rough to step-terraced surface structure. Lateral force microscopy confirms that the atomically-flat surfaces are singly-terminated. Moreover, this technique can be used to remove excessive strontium oxide or hydroxide composites segregated on th…
The availability of low-index rutile TiO2 single crystal substrates with atomically flat surfaces is essential for enabling epitaxial growth of rutile transition metal oxide films. The high surface energy of the rutile (001) surface often leads to surface faceting, which precludes the sputter and annealing treatment commonly used for the preparation of clean and atomically flat TiO2(110) substrate surfaces. In this work, we reveal that stable and atomically flat rutile TiO2(001) surfaces can be prepared with an atomically ordered reconstructed surface already during a furnace annealing treatme…
Point sources exhibit low threshold electron emission due to local field enhancement at the tip. The development and implementation of tip emitters have been hampered by the need to position them sufficiently apart to achieve field enhancement, limiting the number of emission sites and therefore the overall current. Here we report low threshold field (< 0.1V/um) emission of multiple electron beams from atomically thin edges of reduced graphene oxide (rGO). Field emission microscopy (FEM) measurements show evidence for interference from emission sites that are separated by a few nanometers, sug…
The initial homoepitaxial growth of SrTiO3 on a (\surd13\times\surd13) - R33.7°SrTiO3(001) substrate surface, which can be prepared under oxide growth conditions, is atomically resolved by scanning tunneling microscopy. The identical (\surd13\times\surd13) atomic structure is clearly visualized on the deposited SrTiO3 film surface as well as on the substrate. This result indicates the transfer of the topmost Ti-rich (\surd13\times\surd13) structure to the film surface and atomic-scale coherent epitaxy at the film/substrate interface. Such atomically ordered SrTiO3 substrates can be applied to …
Atomically-abrupt interfaces in transition metal oxide (TMO) heterostructures could host a variety of exotic condensed matter phases that may not be found in the bulk materials at equilibrium. A critical step in the development of such atomically-sharp interfaces is the deposition of atomically-smooth TMO thin films. Optimized deposition conditions exist for the growth of perovskite oxides. However, the deposition of rutile oxides, such as VO$_2$, with atomic-layer precision has been challenging. In this work, we used pulsed laser deposition (PLD) to grow atomically-smooth VO$_2$ thin films on…
Perovskite oxides attract increasing attention due to their broad potential in many applications. Understanding their surfaces is challenging, though, because the ternary composition of the bulk allows for multiple stable surface terminations. We demonstrate a simple procedure for preparing the bulk-terminated (001) surface of SrTiO3, a prototypical cubic perovskite. Controlled application of strain on a SrTiO3 single crystal results in a flat cleavage with micrometer-size domains of SrO and TiO2. Distribution of these two terminations is dictated by ferroelectric domains induced by strain dur…
Tuning the work functions of materials is of practical interest for maximizing the performance of microelectronic and (photo)electrochemical devices, as the efficiency of these systems depends on the ability to control electronic levels at surfaces and across interfaces. Perovskites are promising compounds to achieve such control. In this work, we examine the work functions of more than 1,000 perovskite oxide surfaces (ABO$_3$) by data-driven (machine-learning) analysis and identify the factors that determine their magnitude. While the work functions of BO$_2$-terminated surfaces are sensitive…
Well-controlled sub-unit-cell layer-by-layer epitaxial growth of spinel alumina is achieved at room temperature on the TiO2-terminated SrTiO3 single crystalline substrate. By tailoring the interface redox reaction, two-dimensional electron gases with mobilities exceeding 3000 cm2V-1s-1 are achieved at this novel oxide interface.
Epitaxial growth of atomically-sharp interfaces serves as one of the main building blocks of nanofabrication. Such interfaces are crucial for the operation of various devices including transistors, photo-voltaic cells, and memory components. In order to avoid charge traps that may hamper the operation of such devices, it is critical for the layers to be atomically-sharp. Fabrication of atomically sharp interfaces normally requires ultra-high vacuum techniques and high substrate temperatures. We present here a new self-limiting wet chemical process for deposition of epitaxial layers from alkoxi…
We have realized a two-dimensional hole system (2DHS), in which the 2DHS is induced at an atomically flat hydrogen-terminated Si(111) surface by a negative gate voltage applied across a vacuum cavity. Hole densities up to $7.5\times10^{11}$ cm$^{-2}$ are obtained, and the peak hole mobility is about $10^4$ cm$^2$/Vs at 70 mK. The quantum Hall effect is observed. Shubnikov-de Haas oscillations show a beating pattern due to the spin-orbit effects, and the inferred zero-field spin splitting can be tuned by the gate voltage.
Complex oxide heterostructures display some of the most chemically abrupt, atomically precise interfaces, which is advantageous when constructing new interface phases with emergent properties by juxtaposing incompatible ground states. One might assume that atomically precise interfaces result from stoichiometric growth, but here we show that the most precise control is obtained for non-stoichiometric growth where differing surface energies can be compensated by surfactant-like effects. For the precise growth of Sr$_{n+1}$Ti$_n$O$_{3n+1}$ Ruddlesden-Popper (RP) phases, stoichiometric deposition…
Comparison between single- and the poly-crystalline structures provides essential information on the role of long-range translational symmetry and grain boundaries. In particular, by comparing single- and poly-crystalline transition metal oxides (TMOs), one can study intriguing physical phenomena such as electronic and ionic conduction at the grain boundaries, phonon propagation, and various domain properties. In order to make an accurate comparison, however, both single- and poly-crystalline samples should have the same quality, e.g., stoichiometry, crystallinity, thickness, etc. Here, by stu…
Electrical properties of metal-semiconductor (M/SC) and metal/oxide/SC structures built with Zr or ZrO\_2 deposited on oxygen-terminated surfaces of (001)-oriented diamond films, comprising a stack of lightly p-doped diamond on a heavily doped layer itself homoepitaxially grown on a Ib substrate, are investigated experimentally and compared to different models. In Schottky barrier diodes, the interfacial oxide layer evidenced by high resolution transmission electron microscopy and electron energy losses spectroscopy before and after annealing, and barrier height inhomogeneities accounts for th…
We compare STM investigations on two hexaboride compounds, SmB$_6$ and EuB$_6$, in an effort to provide a comprehensive picture of their surface structural properties. The latter is of particular importance for studying the nature of the surface states in SmB$_6$ by surface-sensitive tools. Beyond the often encountered atomically rough surface topographies of {\it in situ}, low-temperature cleaved samples, differently reconstructed as well as B-terminated and, more rarely, rare-earth terminated areas could be found. With all the different surface topographies observed on both hexaborides, a re…
Perovskite oxides containing transition metals are promising materials in a wide range of electronic and electrochemical applications. However, neither their work function values nor an understanding of their work function physics have been established. Here, we predict the work function trends of a series of perovskite ($ABO_3$ formula) materials using Density Functional Theory, and show that the work functions of (001)-terminated AO- and $BO_2$-oriented surfaces can be described using concepts of electronic band filling, bond hybridization, and surface dipoles. The calculated range of AO ($B…
We report on surface effects on the electronic properties of interfaces in epitaxial LaAlO$_3$/SrTiO$_3$ heterostructures. Our results are based on first-principles electronic structure calculations for well-relaxed multilayer configurations, terminated by an ultrathin LaAlO$_3$ surface layer. On varying the thickness of this layer, we find that the interface conduction states are subject to almost rigid band shifts due to a modified Fermi energy. Confirming experimental data, the electronic properties of heterointerfaces therefore can be tuned systematically by alterating the surface-interfac…
The spin-density functional theory (DFT) and DFT+$U$ with Hubbard $U$ term accounting for on-site Coulomb interactions were applied to investigate structure, stability, and electronic properties of different terminations of the Fe$_3$O$_4$(111) surface. All terminations of the ferrimagnetic Fe$_3$O$_4$(111) surface exhibit very large (up to 90%) relaxations of the first four interlayer distances, decreasing with the oxide layer depth. Our calculations predict the iron terminated surface to be most stable in a wide range of the accessible values of the oxygen chemical potential. The adsorption …
The structure of thin terminated Bi(1 1 1) films of approximately 1 nm thickness is investigated from first principles. Our density functional theory calculations show that covalent bonds to the surface can change the orientation of the films completely. For thicker films, the effect is limited to the surface only. Based on these observations, we further present a simple model structure for the native oxide and chemically similar oxides, which form a protective capping layer, leaving the orientation of the films unchanged. The advantages of this energetically favorable layered termination are …
Recently the oxygen-reconstructed tantalum surface Ta(001)-p(3$\times$3)-O has experienced considerable attention due its use as a potential platform for Majorana physics in adatom chains. Experimental studies using scanning tunneling microscopy and spectroscopy found rich atomic and electronic structures already for the clean Ta(001)-O surface, which we combine here with $ab~initio$ methods. We discover two metastable superstructures at the root of the different topographic patterns, discuss its emergence during annealing, and identify the electronic properties. The latter is determined as th…
We have studied the surface of pure and oxidized Pt$_3$Zr(0001) by scanning tunneling microscopy (STM), Auger electron microscopy, and density functional theory (DFT). The well-annealed alloy surface shows perfect long-range chemical order. Occasional domain boundaries are probably caused by nonstoichiometry. Pt$_3$Zr exhibits ABAC stacking along [0001]; only the A-terminated surfaces are seen by STM, in agreement with DFT results showing a lower surface energy for the A termination. DFT further predicts a stronger inward relaxation of the surface Zr than for Pt, in spite of the larger atomic …
High-quality and impurity-free magnetite surfaces with (sqrt2xsqrt2)R45o reconstruction have been obtained for the Fe3O4(001) epitaxial films deposited on Fe(001). Based on atomically resolved STM images for both negative and positive sample polarity and Density Functional Theory calculations, a model of the magnetite (001) surface terminated with Fe ions forming dimers on the reconstructed (sqrt2xsqrt2)R45o octahedral iron layer is proposed.
Direct observations using scanning transmission electron microscopy unveil an intriguing interfacial bi-layer that enables epitaxial growth of a strain-free, monoclinic, bronze-phase VO2(B) thin film on a perovskite SrTiO3 (STO) substrate. We observe an ultrathin (2-3 unit cells) interlayer best described as highly strained VO2(B) nanodomains combined with an extra (Ti,V)O2 layer on the TiO2 terminated STO (001) surface. By forming a fully coherent interface with the STO substrate and a semi-coherent interface with the strain-free epitaxial VO2(B) film above, the interfacial bi-layer enables t…
The step-by-step hydrogen-terminated (SSHT) model is proposed as a model for the surfaces of metal oxides. Using this model, it is found that the vibronic coupling density (VCD) can be employed as a reactivity index for surface reactions. As an example, the regioselectivity of CO$_2$ adsorption on the Ag-loaded Ga$_2$O$_3$ photocatalyst surface is investigated based on VCD analysis. The cluster model constructed by the SSHT approach reasonably reflects the electronic structures of the Ga$_2$O$_3$ surface. The geometry of CO$_2$ adsorbed on the Ag-loaded Ga$_2$O$_3$ cluster has a bent structure…
We study the effect of insulating oxide substrates on the energy band structure of monolayer and bilayer graphene using a first principles density functional based electronic structure method and a local exchange correlation approximation. We consider two crystalline substrates, SiO2 (or alpha-quartz) and Al2O3 (alpha-alumina or sapphire), each with two surface terminations. We focus on the role of substrate surface dangling states and their passivation in perturbing the linear energy spectrum of graphene. On non-passivated surface terminations, with the relaxation of top surface layers, only …
The work of this thesis comprises extensive Noncontact Atomic Force Microscopy (NC-AFM) characterization of clean metal-oxide (YSZ(100)/(111) and MgO(100)) and graphitic (HOPG) supports as templates for the novel, photochemically induced nucleation of cobalt oxide nanostructures, particularly Cobalt (III) Oxide. The nanostructure-support surfaces were also studied by X-ray Photoelectron Spectroscopy (XPS) to verify the nature of the supported cobalt oxide and to corroborate the surface topographic and phase NC-AFM data. Heteroepitaxial growth of Co2O3 nanostructures proves to exhibit a variety…
By performing first-principles calculations on four capacitor structures based on BaTiO3 and PbTiO3, we determine the intrinsic interfacial effects that are responsible for the destabilization of the polar state in thin-film ferroelectric devices. We show that, contrary to the established interpretation, the interfacial capacitance depends crucially on the local chemical environment of the interface through the force constants of the metal-oxide bonds, and is not necessarily related to the bulk screening properties of the electrode material. In particular, in the case of interfaces between AO-…
Growing uniform oxides with various thickness on TMDs is one of the biggest challenges to integrate TMDs into complementary metal oxide semiconductor (CMOS) logic circuits. Here, we report a layer-by-layer oxidation of atomically thin MoTe2 flakes via ozone (O3) exposure. The thickness of MoOx oxide film could be tuning with atomic-level accuracy simply by varying O3 exposure time. Additionally, MoOx-covered MoTe2 shows a hole-dominated transport behavior. Our findings point to a simple and effective strategy for growing homogenous surface oxide film on MoTe2, which is promising for several pu…
We study the electronic structure of the Pd-terminated surface of the non-magnetic delafossite oxide metal PdCoO$_2$. Combining angle-resolved photoemission spectroscopy and density-functional theory, we show how an electronic reconstruction driven by surface polarity mediates a Stoner-like magnetic instability towards itinerant surface ferromagnetism. Our results reveal how this leads to a rich multi-band surface electronic structure, and provide spectroscopic evidence for an intriguing sample-dependent coupling of the surface electrons to a bosonic mode which we attribute to electron-magnon …
Iron oxides are among the most abundant compounds on Earth and have consequently been studied and used extensively in industrial processes. Despite these efforts, concrete understanding of some of their surface phase structures has remained elusive, in particular the oxidized $α-Fe_2O_3(0001)$ hematite surface. We detail an optimized recipe to produce this phase over the entire hematite surface and study the geometrical parameters and composition of its complex structure by means of atomically resolved microscopy, electron diffraction and surface-sensitive spectroscopies. We conclude that the …
Hexagonal boron nitride is the only substrate that has so far allowed graphene devices exhibiting micron-scale ballistic transport. Can other atomically flat crystals be used as substrates for making quality graphene heterostructures? Here we report on our search for alternative substrates. The devices fabricated by encapsulating graphene with molybdenum or tungsten disulphides and hBN are found to exhibit consistently high carrier mobilities of about 60,000 cm$^{2}$V$^{-1}$s$^{-1}$. In contrast, encapsulation with atomically flat layered oxides such as mica, bismuth strontium calcium copper o…
The first examples of single crystal epitaxial thin films of a high entropy perovskite oxide are synthesized. Pulsed laser deposition is used to grow the configurationally disordered ABO3 perovskite, Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3, epitaxially on SrTiO3 and MgO substrates. X-ray diffraction and scanning transmission electron microscopy demonstrate that the films are single phase with excellent crystallinity and atomically abrupt interfaces to the underlying substrates. Atomically-resolved electron energy loss spectroscopy mapping shows a uniform and random distribution of all B-site cations. …
Atomically sharp oxide heterostructures often exhibit unusual physical properties that are absent in the constituent bulk materials. The interplay between electrostatic boundary conditions, strain and dimensionality in ultrathin epitaxial films can result in monolayer-scale transitions in electronic or magnetic properties. Here we report an atomically sharp antiferromagnetic-to-ferromagnetic phase transition when atomically growing polar antiferromagnetic LaMnO3 (001) films on SrTiO3 substrates. For a thickness of five unit cells or less, the films are antiferromagnetic, but for six unit cells…
We investigate the surface electronic structure and thermodynamic stability of the SrTiO3 (111) slabs using density functional theory. We observe that, for Ti-terminated slabs it is indeed possible to create a two-dimensional electron gas (2DEG). However, the carrier density of the 2DEG displays a strong thickness dependence due to the competition between electronic reconstruction and polar distortions. As expected, having a surface oxygen atom at the Ti termination can stabilize the system, eliminating any electronic reconstruction, thereby making the system insulating. An analysis of the sur…
In this paper the early stages of the self-catalyzed Vapor-Liquid-Solid (VLS) growth of GaAs nanowires on epi-ready Si substrates by Molecular Beam Epitaxy (MBE) are studied. The interaction of Ga nano-droplets (NDs) with the silica overlayer is investigated by X-ray Photoemission Spectroscopy (XPS) and Atomic Force Microscopy (AFM). We show how Ga NDs drill the silica overlayer and make contact with bulk Si to allow GaAs nanowires (NWs) epitaxial growth by studying each of the three steps of the NW growth process sequentially: Ga NDs pre-deposition, post-deposition annealing to reach the NW g…
Low-dimensional quantum materials that remain strongly ferromagnetic down to mono layer thickness are highly desired for spintronic applications. Although oxide materials are important candidates for next generation of spintronic, ferromagnetism decays severely when the thickness is scaled to the nano meter regime, leading to deterioration of device performance. Here we report a methodology for maintaining strong ferromagnetism in insulating LaCoO3 (LCO) layers down to the thickness of a single unit cell. We find that the magnetic and electronic states of LCO are linked intimately to the struc…
Engineering the electronic band structure of two-dimensional electron liquids (2DELs) confined at the surface or interface of transition metal oxides is key to unlocking their full potential. Here we describe a new approach to tailoring the electronic structure of an oxide surface 2DEL demonstrating the lateral modulation of electronic states with atomic scale precision on an unprecedented length scale comparable to the Fermi wavelength. To this end, we use pulsed laser deposition to grow anatase TiO2 films terminated by a (1 x 4) in-plane surface reconstruction. Employing photo-stimulated che…
The transfer of electrons between a solid surface and adsorbed atomic or molecular species is fundamental in natural and synthetic processes, being at the heart of most catalytic reactions and many sensors. In special cases, metallic conduction can be induced at the surface of, for example, Si-terminated SiC1, or mixed-terminated ZnO2, in the presence of a hydrogen adlayer. Generally, only the surface atoms are significantly affected by adsorbates. However, remotely changing electronic states far from the adsorbed layer is possible if these states are electrostatically coupled to the surface. …
Atomically engineered oxide multilayers and superlattices display unique properties responsive to the electronic and atomic structures of the interfaces. We have followed the growth of ferroelectric BaTiO3 on SrRuO3 electrode with in situ atomic scale analysis of the surface structure at each stage. An oxygen-induced surface reconstruction of SrRuO3 leads to formation of SrO rows spaced at twice the bulk periodicity. This reconstruction modifies the structure of the first BaTiO3 layers grown subsequently, including intermixing observed with cross-section spectroscopy. These observations reveal…
Surface electronic properties of undoped hydrogen terminated diamond covered with adsorbates or in electrolyte solutions are summarized. The formation of a conductive layer at the surface of diamond is discussed based on Hall effect, conductivity, contact potential difference (CPM), scanning electron microscopy (SEM), and cyclic voltammetry data applied on homoepitaxially grown CVD diamond films with atomically smooth hydrogen terminated surfaces. Due to electron transfer from valence band states into empty states of the electrolyte (transfer doping), a highly conductive surface layer is gener…
Only recently, the activation of oxygen molecules on clean defect-free transition metal oxide surfaces has been reported, for example on the CaO-terminated surface of the Ruddelsden-Popper perovskite \crosurf. In this work we show that oxygen molecules adsorb as an activated superoxo species on a clean SrO-terminated surface of \srosurf. At all coverages, the electrons activating the molecule originate from the subsurface RuO$_2$ layer. At low coverages, the presence of a Ca dopant in the terminating SrO layer slightly increases the adsorption energy. At high coverage, DFT predicts a flat pote…
The surface structure of SrTiO3(001) thin films homoepitaxially grown by PLD in step-flow mode was characterized using low temperature STM. It was found that one-dimensional (1D) TiOx-based nanostructures were formed on the thin film surface and their density increased with increasing thin film thickness. Most of the 1D nanostructures disappeared after a post-deposition annealing, indicating that this structure is metastable due to the nonequilibrium growth mode. The resulting surface after annealing exhibited similar features to that of a thinner film, having a domain structure with (2x1) and…
We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substr…
With the development of affordable aberration-correctors, analytical scanning transmission electron microscopy (STEM) studies of complex interfaces can now be conducted at high spatial resolution at laboratories worldwide. Energy-dispersive X-ray spectroscopy (STEM-EDS) in particular has grown in popularity, since it enables elemental mapping over a wide range of ionization energies. However, the interpretation of atomically-resolved data is greatly complicated by beam-sample interactions that are often overlooked by novice users. Here we describe the practical factors---namely, sample thickne…
Epitaxial strain imposed in complex oxide thin films by heteroepitaxy is recognized as a powerful tool for identifying new properties and exploring the vast potential of materials performance. A particular example is LaCoO3, a zero spin, nonmagnetic material in the bulk, whose strong ferromagnetism in a thin film remains enigmatic despite a decade of intense research. Here, we use scanning transmission electron microscopy complemented by X-ray and optical spectroscopy to study LaCoO3 epitaxial thin films under different strain states. We observed an unconventional strain relaxation behavior re…
PdCoO2 , belonging to a family of triangular oxides called delafossite, is one of the most conducting oxides. Its in-plane conductivity is comparable to those of the best metals, and exhibits hydrodynamic electronic transport with extremely long mean free path at cryogenic temperatures. Nonetheless, it is nonmagnetic despite the presence of the cobalt ion. Here, we show that a mild hydrogenation process reduces PdCoO2 thin films to an atomically-mixed alloy of PdCo with strong out-of-plane ferromagnetism and sign-tunable anomalous Hall effect. Considering that many other compounds remain littl…
LaAlO$_{3}$ and NdGaO$_{3}$ thin films of different thickness have been grown by pulsed laser deposition on TiO$_2$-terminated SrTiO$_{3}$ single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy $hν$ and emission angle $Θ$. In contrast to the core levels of the other elements, the Sr $3d$ line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms d…
The surfaces of perovskite oxides affect their functional properties, and while a bulk-truncated (1$\times$1) termination is generally assumed, its existence and stability is controversial. Here, such a surface is created by cleaving the prototypical SrTiO$_3$(001) in ultra-high vacuum, and its response to thermal annealing is observed. Atomically resolved nc-AFM shows that intrinsic point defects on the as-cleaved surface migrate at temperatures above 200\,$^\circ$C. At 400--500\,$^\circ$C, a disordered surface layer forms, albeit still with a (1$\times$1) pattern in LEED. Purely TiO$_2$-term…
We present a comprehensive first-principles study of the electronic charge redistribution in atomically sharp LaAlO$_3$/SrTiO$_3$(001) heterointerfaces of both n- and p-types allowing for non-stoichiometric composition. Using two different computational methods within the framework of the density functional theory (linear combination of atomic orbitals and plane waves) we demonstrate that conducting properties of LaAlO$_3$/SrTiO$_3$(001) heterointerfaces strongly depend on termination of LaAlO$_3$ (001) surface. We argue that both the polar "catastrophe" and the polar distortion scenarios may …
