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arXiv 1509.04055physics.ins-detastro-ph.IM
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滨松R11410和R8520光电倍增管位置相关光电探测灵敏度的测量

Measurements of the position-dependent photo-detection sensitivity of the Hamamatsu R11410 and R8520 photomultiplier tubes

L. Baudis, S. D'Amato, G. Kessler, A. Kish, J. Wulf

摘要:

Hamamatsu R11410和R8520光电倍增管(PMT)专为使用液态氙的暗物质探测器应用而设计,具有对VUV光的出色灵敏度和在低温下的稳定操作性。对于11个R11410和7个R8520光电倍增管,我们测量了作为入射光在光电阴极上的位置的函数的在470 nm处的相对光电检测灵敏度。考虑到80%的光阴极表面,对于R11410和R8520型号,观察到的非均匀性值分别在(5-10)%和(25-30)%的范围内。我们发现,在光阴极表面的内部区域中的不均匀性主要是由光传感器的内部组件上的光反射,并且边界区域主要有助于观察到的不均匀性。

英文摘要:

The Hamamatsu R11410 and R8520 photomultiplier tubes (PMTs) are designed for applications in dark matter detectors using liquid xenon, featuring excellent sensitivity to VUV light and stable operability at cryogenic temperatures. For eleven R11410 and seven R8520 PMTs, we measured the relative photo-detection sensitivity at 470nm as a function of the position of the incident light on the photocathode. Considering 80% of the photocathode surfaces, the observed non-uniformity values are in the ranges of (5-10)% and (25-30)% for the R11410 and R8520 models, respectively. We found that the non-uniformity in the inner region of the photocathode surface is dominated by light reflections on the internal components of the photosensors and that the border regions contribute dominantly to the observed non-uniformity.

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