Multiple-stable anisotropic magnetoresistance memory in antiferromagnetic MnTe
D. Kriegner, K. Vyborny, K. Olejnik, H. Reichlova, V. Novak, X. Marti, J. Gazquez, V. Saidl, P. Nemec, V. V. Volobuev, G. Springholz, V. Holy, T. Jungwirth
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable alternative to ferromagnets. So far, experimental research has focused on bistable memories in antiferromagnetic metals. In the present work we demonstrate a multiple-stable memory device in epitaxial manganese telluride (MnTe) which is an antiferromagnetic counterpart of common II-VI semiconductors. Favorable micromagnetic characteristics of MnTe allow us to demonstrate a smoothly varying antiferromagnetic anisotropic magnetoresistance (AMR) with a harmonic angular dependence on the applied magnetic field, analogous to ferromagnets. The continuously varying AMR provides means for the electrical read-out of multiple-stable antiferromagnetic memory states which we set by heat-assisted magneto-recording and by changing the angle of the writing field. We explore the dependence of the magnitude of the zero-field read-out signal on the strength of the writing field and demonstrate the robustness of the antiferromagnetic memory states against strong magnetic field perturbations. We ascribe the multiple-stability in our antiferromagnetic memory to different distributions of domains with the Néel vector aligned along one of the three $c$-plane magnetic easy axes in the hexagonal MnTe film. The domain redistribution is controlled during the heat-assisted recording by the strength and angle of the writing field and freezes when sufficiently below the Néel temperature.
Plaid-Like Spin Splitting and Chirality of Magnon Bands in Antiferromagnetic MnTe$_2$
Sejong University（世宗大学）；Korea Advanced Institute of Science and Technology (KAIST)（韩国科学技术院）；Sungkyunkwan University（成均馆大学）；Institute of Physics, Academia Sinica（中央研究院物理研究所）
Néel-order-dependent transverse transport in noncoplanar antiferromagnet $\text{MnTe}_{2}$
Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology（北京理工大学 光电量子架构与测量教育部重点实验室 物理学院）；International Center for Quantum Materials, Beijing Institute of Technology（北京理工大学 国际量子材料中心）
Spin Hall Magnetoresistance in Antiferromagnetic Insulators
Walther-Meissner-Institut, Bayerische Akademie der Wissenschaften（瓦尔特·迈斯纳研究所，巴伐利亚科学院）；TUM School of Natural Sciences, Technische Universität München（慕尼黑工业大学自然科学学院）；Munich Center for Quantum Science and Technology (MCQST)（慕尼黑量子科学与技术中心）
Unlocking Doping Effects on Altermagnetism in MnTe: Emergence of Quasi-altermagnetism
Indian Institute of Technology Madras（印度马德拉斯理工学院）；Indian Institute of Science, Bangalore（印度科学研究所班加罗尔分校）；Scuola Internazionale Superiore di Studi Avanzati (SISSA)（国际高等研究院）
Emergent Magnetic Structures at the 2D Limit of the Altermagnet MnTe
Instituto Madrileño de Estudios Avanzados, IMDEA Nanociencia（马德里高级研究所，IMDEA纳米科学研究所）；Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学与技术研究所（ICN2），西班牙国家研究委员会和巴塞罗那自治大学）；Centro de Física de Materiales CFM/MPC (CSIC-UPV/EHU)（材料物理中心 CFM/MPC（西班牙国家研究委员会-巴斯克国立理工大学/巴斯克大学））；Departamento de Física de la Materia Condensada Universidad Autónoma de Madrid（马德里自治大学凝聚态物理系）；Condensed Matter Physics Center (IFIMAC) Universidad Autónoma de Madrid（马德里自治大学凝聚态物理中心（IFIMAC））；School of Physics and Astronomy - Monash University（莫纳什大学物理与天文学学院）；Instituto Nicolás Cabrera, Universidad Autónoma de Madrid（马德里自治大学尼古拉斯·卡布雷拉研究所）
Gate-tunable magnetoresistance in six-septuple-layer MnBi$_2$Te$_4$
最近发现的反铁磁拓扑绝缘体MnBi $_2$ Te $_4$具有多种奇异的拓扑量子相，如轴子绝缘体和陈氏绝缘体态。在这里，我们报告系统的栅极电压依赖于磁输运的研究在六个七层MnBi $_2$ Te $_4$。在p型载流子区，当MnBi $_2$ Te $_4$在铁磁态被面外磁场极化时，我们观察到正的线性磁阻。而在n型区，观察到明显的负磁电阻行为。在这两个制度的磁阻是非常强大的对温度，甚至高达内尔温度。在反铁磁状态下，当施加栅极电压时，磁电阻的行为表现出从负到正的转变。实验相图中不同磁阻行为之间的边界可以通过表示自旋翻转转变过程的与栅电压无关的磁场来明确表征。丰富的输运现象显示了MnBi $_2$ Te $_4$中拓扑结构、磁性和维数之间复杂的相互作用。
Spin-dependent ballistic transport properties and electronic structures of pristine and edge-doped zigzag silicene nanoribbons: large magnetoresistance
Antiferromagnetic anisotropy determination by spin Hall magnetoresistance
提出了一种测量反铁磁绝缘体（AFI）磁各向异性的电学方法。当具有强自旋-轨道相互作用的金属膜，例如，铂（Pt）沉积在AFI上，由于自旋霍尔磁阻（SMR），其电阻应受到AFI N单元矢量方向的影响。因此，受外部磁场和磁各向异性两者影响的AFI N eel矢量的方向反映在Pt的电阻中。考虑SMR，计算了Pt电阻与AFI的磁场角度关系，表明在强磁场中，通过监测Pt电阻，可以从实验上获得反铁磁各向异性。对Pt/Cr2 O3、Pt/NiO和Pt/CoO等实际体系进行了计算。
Ab initio study of magnetoresistance effect in $\mathrm{Mn_{3}Sn}/\mathrm{MgO}/\mathrm{Mn_{3}Sn}$ antiferromagnetic tunnel junction
University of Tokyo（东京大学）；JSR Corporation（JSR公司）；Kyoto University（京都大学）；Johns Hopkins University（约翰斯·霍普金斯大学）；Tokyo Metropolitan University（东京都立大学）；Tohoku University（东北大学）；RIKEN（理化学研究所）
Unidirectional magnetoresistance driven by nonequilibrium antiferromagnetic magnons
South China University of Technology（华南理工大学）；Norwegian University of Science and Technology（挪威科技大学）；Peking University（北京大学）；Nanyang Technological University（南洋理工大学）
