AI 中文总结
本研究通过分子束外延生长α-MnTe薄膜，利用磁输运测量结合DFT计算，证实该类反铁磁候选材料薄膜存在净磁极化，为调控薄膜磁响应提供了外延方法。
AI 中文摘要
精确调控磁性能是未来自旋电子学发展的核心。本研究采用分子束外延技术在InP(111)衬底上成功生长了外延α-MnTe薄膜。低温下的磁输运测量显示，存在独特的滞后型蝶形纵向磁电阻以及非线性横向磁电阻响应，表明薄膜中存在有限的净磁极化。为探究该行为的起源，进行了密度泛函理论（DFT）计算。原始块体MnTe为补偿型反铁磁体，但计算结果表明，在薄膜几何结构中存在多种产生有限磁化的途径，包括界面诱导的对称性破缺和点缺陷。这些发现为工程化薄膜中的磁响应提供了一条外延途径。
英文摘要
The ability to precisely control magnetic properties is central to the development of future spin-based electronics. In this work, we report the successful growth of epitaxial α-MnTe thin films on InP(111) substrates using molecular beam epitaxy. Magneto-transport measurements at low temperatures reveal a distinct, hysteretic butterfly longitudinal magnetoresistance alongside a nonlinear transverse magneto-resistance response, suggesting the presence of a finite net magnetic polarization in the films. To understand the origin of this behavior, density functional theory (DFT) calculations were performed. While pristine bulk MnTe is a compensated antiferromagnet, our computational results suggest multiple pathways through which a finite magnetization can emerge in thin-film geometries, including interface-induced symmetry breaking and point defects. These findings demonstrate an epitaxial route for engineering magnetic responses in thin films.
