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arXiv 1506.07445cond-mat.mes-hallcond-mat.mtrl-sciphysics.class-phphysics.optics
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SiC和SiO2之间的辐射热整流

Radiative Thermal Rectification between SiC and SiO2

Karl Joulain, Younes Ezzahri, Jérémie Drevillon, Benoit Rousseau, Domingos De Sousa Meneses

摘要:

本文用波动电动力学方法计算了SiC和SiO_2两种平板材料之间的辐射热流。更具体地说,我们专注于第一种(直接)情况,其中两种材料之一(例如SiC)处于环境温度,而第二种材料处于更高的温度,然后我们研究第二种(反向)情况,其中材料温度被反转。当对应于两种情况的两种通量不同时,材料被认为表现出热整流,这是一种在热调节中具有潜在应用的性质。整流随温度和分离距离的变化在这里报告。使用材料光学数据进行计算,实验确定的傅里叶变换发射光谱的加热材料之间的环境温度(约300 K)和1480 K。结果表明,整流是更重要的近场域,即在小于热波长的分离距离。另外,我们看到温差越大,整流越大。大整流最终解释由于SiC表面极化激元的减弱,当温度升高时,削弱影响少得多的SiO2共振。

英文摘要:

By means of fluctuationnal electrodynamics, we calculate radiative heat flux between two pla-nar materials respectively made of SiC and SiO2. More specifically, we focus on a first (direct) situation where one of the two materials (for example SiC) is at ambient temperature whereas the second material is at a higher one, then we study a second (reverse) situation where the material temperatures are inverted. When the two fluxes corresponding to the two situations are different, the materials are said to exhibit a thermal rectification, a property with potential applications in thermal regulation. Rectification variations with temperature and separation distance are here reported. Calculations are performed using material optical data experimentally determined by Fourier transform emission spectrometry of heated materials between ambient temperature (around 300 K) and 1480 K. It is shown that rectification is much more important in the near-field domain, i.e. at separation distances smaller than the thermal wavelength. In addition, we see that the larger is the temperature difference, the larger is rectification. Large rectification is finally interpreted due to a weakening of the SiC surface polariton when temperature increases, a weakening which affects much less SiO2 resonances.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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