We investigated thermal conductivity of free-standing reduced graphene oxide films subjected to a high-temperature treatment of up to 1000 C. It was found that the high-temperature annealing dramatically increased the in-plane thermal conductivity, K, of the films from 3 W/mK to 61 W/mK at room temperature. The cross-plane thermal conductivity, Kc, revealed an interesting opposite trend of decreasing to a very small value of 0.09 W/mK in the reduced graphene oxide films annealed at 1000 C. The obtained films demonstrated an exceptionally strong anisotropy of the thermal conductivity, K/Kc ~ 675, which is substantially larger even than in the high-quality graphite. The electrical resistivity of the annealed films reduced to 1 - 19 Ohms/sq. The observed modifications of the in-plane and cross-plane thermal conductivity components resulting in an unusual K/Kc anisotropy were explained theoretically. The theoretical analysis suggests that K can reach as high as ~500 W/mK with the increase in the sp2 domain size and further reduction of the oxygen content. The strongly anisotropic heat conduction properties of these films can be useful for applications in thermal management.
Sol-gel spin coating technique was employed to synthesize CuO thin films at 1500 rpm, 2200 rpm and 2400 rpm for 30 seconds, and subsequently annealed at 150-550°C for 1 hour. Multi-layered CuO thin films with 3 and 5 layers were prepared. These thin films were characterized using XRD, FTIR and polarizing light microscopy. The XRD and FTIR analysis confirmed the crystallization of CuO phase in thin films annealed above 350 °C, and corresponding crystallite sizes were observed to be increasing with the annealing temperature. The Scherrer formula was applied for (111) and peaks of XRD patterns of…
A combination of high-resolution x-ray diffraction and a new technique of x-ray standing wave uorescence at grazing incidence is employed to study the structure of (Ga,Mn)As diluted magnetic semiconductor and its changes during post-growth annealing steps. We find that the film is formed by a uniform, single crystallographic phase epilayer covered by a thin surface layer with enhanced Mn concentration due to Mn atoms at random non-crystallographic positions. In the epilayer, Mn incorporated at interstitial position has a dominant effect on lattice expansion as compared to substitutional Mn. Th…
Broadband Dielectric Spectroscopy (BDS) measurements of Pοlyaniline/Graphene oxide composites were conducted for an as-prepared and a thermally annealed specimen, respectively, from 15K to room temperature. Electrical conductivity values of the annealed composite display a very modest rise denoting the important contributions of the GO component to achieving electrical stability of the polymer. Patterns of the dc conductivity as a function of temperature also reveal a metal to insulator transition around 75K. The transition is dominated by two key factors; temperature and annealing process. Me…
We develop a simple chemical method to obtain bulk quantities of N-doped, reduced graphene oxide (GO) sheets through thermal annealing of GO in ammonia. X-ray photoelectron spectroscopy (XPS) study of GO sheets annealed at various reaction temperatures reveals that N-doping occurs at a temperature as low as 300C, while the highest doping level of ~5% N is achieved at 500C. N-doping is accompanied by the reduction of GO with decreases in oxygen levels from ~28% in as-made GO down to ~2% in 1100C NH3 reacted GO. XPS analysis of the N binding configurations of doped GO finds pyridinic N in the do…
Periodical multilayer (ML) structures can be used as generators of X-ray standing waves (XSW) for investigation of objects and processes on solid/liquid and solid/gas interfaces. In this paper, we investigate the specific requirements to the structural properties of the multilayer structures for XSW application. We consider the effect of typical defects in the ML structure on the X-ray standing wave formation and show that the X-ray standing wave is very robust against the random imperfection in the multilayer structure. In contrast, the roughness of the topmost layer will have a strong influe…
In present investigation we report the synthesis of antimony tin oxide nanoparticles via chemical precipitation method. The synthesized material was characterized using X-ray diffractometer, Scanning Electron Microscope, UV-visible absorption spectroscopy. XRD shows the crystalline nature of the synthesized material and the crystallite size was estimated by using Debye-Scherer equation and its minimum value was 3 nm. Pelletization of synthesized material was done using hydraulic press machine under uniform pressure of 616 MPa. Then the pellets were annealed at 200, 400 and 600°C. Further each …
We report a chemical free method for the reduction of graphene oxide (GO) thin films. It was observed how for GO films annealed in air the oxygen species desorb from the GO surface upon exposure to UV light and how the surface resistivity of such deoxygenated GO films decreases with increasing the exposure to the UV light. The obtained results open a clean as well as easy route for the integration of GO based materials into optoelectronic devices.
We report the magnetic properties of mechanically milled Co$_{0.2}$Zn$_{0.8}$Fe$_2$O$_4$ spinel oxide. After 24 hours milling of the bulk sample, the XRD spectra show nanostructure with average particle size $\approx$ 20 nm. The as milled sample shows an enhancement in magnetization and ordering temperature compared to the bulk sample. If the as milled sample is annealed at different temperatures for the same duration, recrystallization process occurs and approaches to the bulk structure on increasing the annealing temperatures. The magnetization of the annealed samples first increases and the…
Graphene oxide (GO) is one of chemically modified graphenes and has been extensively studied worldwide. A monolayer sheet of GO which is chemically produced in solution can be deposited on various substrates. We have proved that use of graphite powder with a large grain size enables preparation of a single layer GO film that is larger than 100 micrometers easily and reproducibly. If it is possible to reduce the GO film completely, one can obtain graphene without mechanical exfoliation. However, the reduction methods employed so far have been insufficient to remove oxygen or to restore the long…
Thin films of magnesium doped zinc oxide (MZO) were synthesized using the sol gel method and annealed at different temperatures under ambient condition. The morphological properties of the post annealed MZO films were investigated using X ray diffraction (XRD) while atomic force microscopy (AFM) was employed to probe the topographical alteration of the films. The optical properties of the post annealed MZO films were examined by UV visible spectroscopy and the Tauc method was used to estimate the optical band gap. The studies revealed that, with the rise of annealing temperature the crystallin…
Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomena with depth-dependent atomic resolution as well as element- and orbital selectivity. Here, we utilize a combination of core-level and valence-band soft x-ray standing-wave photoemission spectroscopy,…
This paper reports on the thermal properties of reduced graphite oxide (RGO) flakes, studied by means of scanning thermal microscopy (SThM). This technique was demonstrated to allow thermal characterization of the flakes with a spatial resolution of the order of a few tens of nanometers, while recording nanoscale topography at the same time. Several individual RGO flakes were analyzed by SThM, both as obtained after conventional thermal reduction and after a subsequent annealing at 1700°C. Significant differences in the thermal maps were observed between pristine and annealed flakes, reflectin…
In this work we report results of step-by-step modeling of the oxidation of free-standing boron monolayers of different types. Results of the calculations demonstrate that the process of the oxidation is always exothermic and lead toward the formation of foam-like boron oxide films with incorporated non-oxidized small boron clusters. Some of these boron-oxide films demonstrate the presence of chemically stable magnetic centers. Evaluation of the physical properties of oxidized boprophene sheets (OBS) demonstrate it possible application in solar energy, as sensors and coating against leakage of…
We investigated the influence of vacuum annealing on interface properties of silicon carbide (SiC) metal-oxide-semiconductor (MOS) structures. For as-oxidized and nitric oxide (NO)-annealed samples, the interface state density ($D_{\rm it}$) near the conduction band edge ($E_{\rm C}$) of SiC did not increase by subsequent vacuum annealing. For phosphoryl chloride (POCl$_3$)-annealed samples, in contrast, $D_{\rm it}$ at $E_{\rm C}-0.2$ eV increased from $1.3\times10^{10}$ to $2.2\times10^{12}$ cm$^{-2}$eV$^{-1}$ by the vacuum annealing, and the channel mobility of MOS field effect transistors …
The epitaxial growth of functional materials using a substrate with a graphene layer is a highly desirable method for improving structural quality and obtaining free-standing epitaxial nano-membranes for scientific study, applications, and economical reuse of substrates. However, the aggressive oxidizing conditions typically employed to grow epitaxial perovskite oxides can damage graphene. Here, we demonstrate a technique based on hybrid molecular beam epitaxy that does not require an independent oxygen source to achieve epitaxial growth of complex oxides without damaging the underlying graphe…
We report on the deposition of gallium oxide using microwave irradiation technique on III nitride epi layers. We also report on the first demonstration of a gallium oxide device, a visible blind deep UV detector, with GaN based heterostructure as the substrate. The film deposited in the solution medium, at less than 200 C, using a metalorganic precursor, was nanocrystalline. XRD confirms that as deposited film when annealed at high temperature turns polycrystalline beta gallium oxide. SEM shows the as deposited film to be uniform, with a surface roughness of 4 to 5 nm, as revealed by AFM. Inte…
In this study, we report a different strategy to prepare graphene nanopapers from direct vacuum filtration. Instead of the conventional method, i.e. thermal annealing nanopapers at extremely high temperatures prepared from graphene oxide (GO) or partially reduced GO, we fabricate our graphene nanopapers directly from suspensions of fully reduced graphene oxide (RGO), obtained after RGO and thermally annealing at 1700 °C in vacuum. By using this approach, we studied the effect of thermal annealing on the physical properties of the macroscopic graphene-based papers. Indeed, we demonstrated that …
Two-dimensional electron gases (2DEGs) at the ZnO/ZnMgO interface are promising for applications in spintronics and quantum computing due to the combination of low spin-orbit coupling and high electron mobility. Growing high mobility 2DEGs requires high quality substrates with low impurity densities. In this work we demonstrate a ZnO substrate sample treatment combining high temperature rapid thermal annealing and chemical etching to improve the surface quality for the subsequent growth of 2DEGs. This process enables the growth of a 2DEG with low-temperature mobility of $4.8\times10^4$~cm$^2$V…
Ultrathin cerium oxide films have been deposited on chlorine, gallium, and silver passivated Si(111) by reactive molecular beam epitaxy in a comparative study. The crystallinity of these films has been characterized by x-ray standing waves while the oxidation state of the rare-earth oxide (REOx) films and the chemical interface composition have been revealed by hard x-ray photoelectron spectroscopy. The use of Cl as passivating agent results in the epitaxial growth of highly crystalline REOx films with the RE metal in the 3+ oxidation state while effectively suppressing silicate and silicon ox…
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunneling mechanism in large electric fields, we obtain an effective barrier height $ϕ_{eff}$ of $\sim$ 0.7 $\pm$ 0.1 eV for an e…
In this paper, a method is presented to create and characterize mechanically robust, free standing, ultrathin, oxide films with controlled, nanometer-scale thickness using Atomic Layer Deposition (ALD) on graphene. Aluminum oxide films were deposited onto suspended graphene membranes using ALD. Subsequent etching of the graphene left pure aluminum oxide films only a few atoms in thickness. A pressurized blister test was used to determine that these ultrathin films have a Young's modulus of 154 \pm 13 GPa. This Young's modulus is comparable to much thicker alumina ALD films. This behavior indic…
Thin films of Zn2+ doped cupric oxide (CuO) were synthesized using spin coating technique starting from a solution with Cu and Zn. The speed of spin coating and time duration were varied to fabricate a film with required uniform thickness. Samples were subsequently annealed in air at different annealing temperatures to crystallize the phase of CuO. Doping concentration of Zn2+ was varied up to weight percentage of 10%. Structural properties of samples were determined using X-ray diffraction technique. Particle size, dislocation density and strain at different doping concentrations were determi…
The O2 dissociation and O atoms adsorption on free-standing germanene are studied by using first-principles calculations in this letter. Compared with the spontaneous dissociation of oxygen molecule on free-standing silicene in air, germanene is more stable than silicene from kinetic point of view, with overcoming energy barrier of about 0.55 eV. Especially, in contrast with the unique chemical adsorption of O2-dissociation-induced O atoms on silicene, oxygen molecule can behave a correspondingly stable adsorption on germanene surface. Moreover, single O atom adsorption on germanene is also di…
The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties has been demonstrated. In this work, the luminescent properties of SiO2/Si structures irradiated with Kr+ ions at different doses and annealed at 800 °C have been systematically investigated. For such structures, a photoluminescence line at ~ 1240 nm is observed and associated with the formation of hexagonal 9R-Si phase inclusions. It is found that the vari…
We have studied transport properties of Nb/Al/AlOx/Nb tunnel junctions with ultrathin aluminum oxide layers formed by (i) thermal oxidation and (ii) plasma oxidation, before and after rapid thermal post-annealing of the completed structures at temperatures up to 550 deg C. Post-annealing at temperatures above 300 deg C results in a significant decrease of the tunneling conductance of thermally-grown barriers, while plasma-grown barriers start to change only at annealing temperatures above 450 deg C. Fitting the experimental I-V curves of the junctions using the results of the microscopic theor…
The problem of detecting the ability of some metal oxides as photocatalysts is receiving considerable attention in the world. The studied zinc oxide is considered as one of the most utilized semiconductors, due to its direct band gap of 3.37 eV and a large exciton binding energy of 60 meV at room temperature. The characteristic formulation of Copper doped zinc oxide is implemented to obtain an improved adsorption kinetics and photocatalytic activity of zinc oxide photocatalyst capable of evolving estimated photoluminescence (PL) spectra of zinc oxide nanoparticles to explore the effect of Copp…
A novel sol-gel route to c-axis orientated undoped and Co, Fe, Mn and V doped ZnO films is reported. Sols were prepared from a hydrated zinc acetate precursor and dimethyl formamide (DMF) solvent. Films were spin-coated on to hydrophilic sapphire substrates then dried, annealed and post-annealed, producing almost purely uniaxial ZnO crystallites and a high degree of long-range structural order. Specific orientation of hexagonal crystallites is demonstrated both perpendicular and parallel to the substrate surface. Cobalt doping resulted in the formation of columnar ZnO nanocrystals. Vanadium do…
We report on sexithiophene films, about 150nm thick, grown by thermal evaporation on single crystal oxides and, as comparison, on Si/SiO2. By heating the entire deposition chamber at 100 C we obtain standing-up oriented molecules all over the bulk thickness. Surface morphology shows step-like islands, each step being only one monolayer height. The constant and uniform warming of the molecules obtained by heating the entire deposition chamber allows a stable diffusion-limited growth process. Therefore, the regular growth kinetic is preserved when increasing the thickness of the film. Electrical…
In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree) in O2 ambient for 10 min. The samples have been characterized using XRD, FTIR, EDAX, AFM and Laser Ellipsometer. The impact of annealing temperatures in O2 ambient on structural properties such as crystallite size, phase, orientation, stress have been studied using XRD. The Hf-O phonon peaks in the infrared absorption spectrum are detected at 512, 412 cm^-1 . The stretching vibration modes at 720 cm^-1 and 748 cm^-1…
Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO$_2$ interface. Here we show that a forming gas anneal is effective at removing shallow defects ($\leq$ 4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors (MOSFETs). One set was irradiated with an electron-beam (10 keV, 40 $μ$C/cm$^2$) and was subsequently annealed in forming gas while the other set remained unexposed. Low tempera…
Absence of an efficient technology of GaAs passivation limits the use of III-V semiconductors in modern electronics. The effect reported here can possibly lead to a solution of this long standing problem. We found that an electrically conducting interfacial channel is formed when insulating metal oxide dielectrics are deposited on untreated semi-insulating GaAs wafers by reactive RF sputtering in argon/oxygen plasma. The conducting channel is n-type with the surface charge density of 10^7 to 10^10 cm^-2 and Hall mobility as high as 6000 cm^2/Vsec, depending on the RF plasma excitation power an…
Spin coating technique was employed to fabricate CuO films at different spin speeds for different time duration, and they were annealed at different temperatures for different time durations in air. These thin films were characterized using UV Visible spectrometer and solar cell simulator. As the spinning rate increases, the corresponding band gap energy of the thin film increases. However, the annealing temperature does not affect the optical band gap. Moreover, the optical band gap does not depend on the annealing time and spin time. It was observed that the optical band gap decreases with t…
In the paper, high temperature induced phase transformation in chemically grown CdO thin films has been demonstrated whereas their corresponding electronic origin is further investigated by density functional theory. In particular, cubic rocksalt to hexagonal wurtzite PT in 900 degree centigrade annealed CdO thin films is confirmed by Xray diffraction , consistent with High Resolution Transmission Electron Microscopy. Such high temperature treatment also leads to significant enhancement in optical band gap from 2.2 to 3.2 eV as manifested by UV-Visible spectroscopy. Moreover, atomic force micr…
Wide-bandgap perovskite stannates are of interest for the emergent all-oxide transparent electronic devices due to their unparalleled room temperature electron mobility. Considering the advantage of amorphous material in integrating with non-semiconductor platforms, we herein reported the optical and electronic properties in the prototypical stannate, amorphous barium stannate (BaSnO3) thin films, which were deposited at room temperature and annealed at various temperatures. Despite remaining amorphous status, with increasing the annealing temperature, the defect level within amorphous BaSnO3 …
Reverse electrodialysis is a promising method to harvest the osmotic energy stored between seawater and freshwater, but it has been a long-standing challenge to fabricate permselective membranes with the power density surpassing the industry benchmark of 5.0 W $m^{-2}$ for half a century. Herein, we report a vertically-oriented graphene oxide membranes (V-GOMs) with the combination of high ion selectivity and ultrafast ion permeation, whose permeation is three orders of magnitude higher than the extensively studied horizontally stacked GOMs (H-GOMs). By mixing artificial seawater and river wat…
The argon content of titanium dioxide doped tantalum pentoxide thin films was quantified in a spatially resolved way using HAADF images and DualEELS. Films annealed at 300$^{\circ}$C, 400$^{\circ}$C and 600$^{\circ}$C were investigated to see if there was a relationship between annealing temperature and bubble formation. It was shown using HAADF imaging that argon is present in most of these films and that bubbles of argon start to form after annealing at 400$^{\circ}$C and coarsen after annealing at 600$^{\circ}$C. A semi-empirical standard was created for the quantification using argon data …
Adsorption is one important way applied to water decontamination, where carbon is commonly used as highly effective absorbent. Carbon of different morphologies and structures normally demonstrate distinct capabilities to adsorption-typed decontaminations. Graphene oxide is regarded as the oxidative derivative of graphene, maintaining its 2D morphology-featuring structure while location-dependently immobilized with a large amount of various oxygen-involving functional moieties on both sides. Free-standing graphene oxide tends to fully unfold in water and behave in macromolecular-like Brownian m…
We have studied the surface of pure and oxidized Pt$_3$Zr(0001) by scanning tunneling microscopy (STM), Auger electron microscopy, and density functional theory (DFT). The well-annealed alloy surface shows perfect long-range chemical order. Occasional domain boundaries are probably caused by nonstoichiometry. Pt$_3$Zr exhibits ABAC stacking along [0001]; only the A-terminated surfaces are seen by STM, in agreement with DFT results showing a lower surface energy for the A termination. DFT further predicts a stronger inward relaxation of the surface Zr than for Pt, in spite of the larger atomic …
We study the absorption spectra of the yellow excitons in Cu$_2$O in high magnetic fields using polarization-resolved optical absorption measurements with a high frequency resolution. We show that the symmetry of the yellow exciton results in unusual selection rules for the optical absorption of polarized light and that the mixing of ortho- and para- excitons in magnetic field is important. Our calculation of the energies of the yellow exciton series in an arbitrary magnetic field gives an excellent fit to experimental data and allows us to understand the complex structure of excitonic levels …
The diffusion of substrate material into absorbing layer and oxidation of metal substrate or cermet metal nanoparticles at high temperatures are known as inevitable problems of the solar selective absorbers. In this study, we consider the use of textured stainless steel (SS) surface coated with a protective AlCr oxide layer as a high temperature solar selective absorber. The textured SS surface was prepared by ion etching techniques and AlCr oxide protective layer was deposited by RF magnetron sputtering. The absorptivity and emissivity of the as-prepared absorbers were 0.86-0.92 and 0.151-0.1…
We investigate the effect of post-deposition annealing (for temperatures from 848 K to 1273 K) on the chemical properties of crystalline Ta$_2$O$_5$ films grown on Si(100) substrates by radio frequency magnetron sputtering. The atomic arrangement, as determined by X-ray diffraction, is predominately hexagonal ($δ$-Ta$_2$O$_5$) for the films exposed to heat treatments at 948 K and 1048 K; orthorhombic ($β$-Ta$_2$O$_5$) for samples annealed at 1148 K and 1273 K; and amorphous for samples annealed at temperatures below 948 K. X-ray photoelectron spectroscopy for Ta $4f$ and O $1s$ core-levels wer…
Hematite $α-Fe_{2}O_{3}(0001)$ is the most-investigated iron oxide model system in photo and electrocatalytic research. The rich chemistry of Fe and O allows for many bulk and surface transformations, but their control is challenging. This has led to controversies regarding the structure of the topmost layers. This comprehensive study combines surface methods (nc-AFM, STM, LEED, and XPS) complemented by structural and chemical analysis of the near-surface bulk (HRTEM and EELS). The results show that a compact 2D layer constitutes the topmost surface of $α-Fe_{2}O_{3}(0001)$; it is locally corr…
We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By using micromechanical cleavage, we have prepared and studied a variety of 2D crystals, including single layers of boron nitride, graphite, several dichalcogenides and complex oxides. These atomically-thin sheets (essentially gigantic 2D molecules unprotected from the immediate environment) are stable under ambient conditions, exhibit high crystal quality and are continuous on a macroscopic scale.
Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS), and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with angstrom precision. We det…
Ferric oxide (Fe2O3) thin films were fabricated on amorphous nonconductive and FTO conductive glass substrates starting from iron acetate nanoparticles by the doctor blade and the spin coating techniques. Thin films of Fe2O3 with and without the PEG binder were investigated. Films were subsequently annealed at 500 0C in air for 1 hour to crystallize the phase Fe2O3. The structural and chemical properties of Fe2O3 thin films were determined using XRD and FTIR. According to XRD, the single phase of Fe2O3 crystallized in the thin film after annealing. The optical band gap of synthesized Fe2O3 thi…
High-entropy perovskite thin films, as the prototypical representative of the high-entropy oxides with novel electrical and magnetic features, have recently attracted great attention. Here, we reported the electronic structure and charge transport properties of sol-gel-derived high-entropy Ba(Zr0.2Sn0.2Ti0.2Hf0.2Nb0.2)O3 thin films annealed at various temperatures. By means of X-ray photoelectron spectroscopy and absorption spectrum, it is found that the conduction-band-minimum shifts downward and the valence-band-maximum shifts upward with the increase of annealing temperature, leading to the…
Perovskites are mixed oxides with the general formula ABO3. Many different compositions have been found to be possible and their number is growing rapidly due to their characteristics that make them ideal for various applications, such as fabrication of cathodes for solid oxide fuel cells (SOFCs). Oxide powders of LaxSr1-xCo1-y-zFeyMnzO3-δ (x=0.4, 0.6, 0.8, y=0.4, 0.8 and z=0.1, 0.2), named LSCFM, were prepared by mixing commercial powders. The powders have been investigated as a function of the stoichiometry and the crystal structure parameters have been determined using Rietveld analysis. Th…
Low temperature solution combustion synthesis emerges as a facile method for synthesis of functional metal oxides thin films for electronic applications. We study the solution combustion synthesis process of Cu:NiOx using different molar ratios (w/o, 0.1 and 1.5) of fuel acetylacetone (Acac) to oxidizer (Cu, Ni Nitrates) as a function of thermal annealing tempera-tures 150, 200 and 300 oC. The solution combustion synthesis process, in both thin films and bulk Cu:NiOx, is investigated. Thermal analysis studies using TGA and DTA reveal that the Cu:NiOx thin films show a more gradual mass loss wh…
We report a lithographic process for creating high-resolution (<10 nm) carbon templates on Si(100). A scanning electron microscope, operating under low vacuum (10E-6 mbar), produces a carbon-containing deposit ("contamination resist") on the silicon surface via electron-stimulated dissociation of ambient hydrocarbons, water and other adsorbed molecules. Subsequent annealing at temperatures up to 1320 K in ultra-high vacuum removes SiO2 and other contaminants, with no observable change in dot shape. The annealed structures are compatible with subsequent growth of semiconductors and complex oxid…
