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arXiv 1503.03110cond-mat.mes-hall
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石墨烯双层膜中的杂质和电子局域化

Impurities and electronic localization in graphene bilayers

H. P. Ojeda Collado, Gonzalo Usaj, C. A. Balseiro

摘要:

我们分析了具有Bernal堆积和低浓度吸附原子的双层石墨烯的电子性质。假设宿主双层位于衬底的顶部,我们考虑杂质仅吸附在上层的情况。我们将非磁性杂质描述为与碳的pz态杂化的单个轨道。分析了在垂直于层的栅电场存在和不存在时杂质掺杂对局域态密度的影响。我们在不同的区域寻找安德森局域化并估计局域化长度。在偏置系统中,强局域杂质态部分地填充了场致能隙。有趣的是,这些态的结构、分布和局域化长度依赖于场的极化。

英文摘要:

We analyze the electronic properties of bilayer graphene with Bernal stacking and a low concentration of adatoms. Assuming that the host bilayer lies on top of a substrate, we consider the case where impurities are adsorbed only on the upper layer. We describe non-magnetic impurities as a single orbital hybridized with carbon's pz states. The effect of impurity doping on the local density of states with and without a gated electric field perpendicular to the layers is analyzed. We look for Anderson localization in the different regimes and estimate the localization length. In the biased system, the field induced gap is partially filled by strongly localized impurity states. Interestingly, the structure, distribution and localization length of these states depend on the field polarization.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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