Electron injection from the tip of a scanning tunneling microscope into a p-type GaAs(110) surface have been used to induce luminescence in the bulk. Atomically-resolved photon maps revealed significant reduction of luminescence intensity at surface states localized near Ga atoms. Quantitative analysis based on the first principles calculation and a rate equation approach was performed to describe overall energy dissipation processes of the incident tunneling electrons. Our study shows that the recombination processes in the bulk electronic states are suppressed by the fast electron scattering at the surface, and the electrons dominantly undergo non-radiative recombination through the surface states.
We study gate field effects on the Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ | graphene | GaAs heterostructure via first-principles calculations. We find that under moderate doping levels electrons can be added to but not taken from the single-molecule magnet Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ (Mn$_{12}$). The magnetic anisotropy energy (MAE) of Mn$_{12}$ decreases as the electron doping level increases, due to electron transfer from graphene to Mn$_{12}$ and change in the band alignment between Mn$_{12}$ and graphene. At an electron doping level of $-5.00 \times 10^{13}\, \textrm{cm}…
The dependences of the transport scattering time τt, quantum lifetime τq, and their ratio τt/τq on the density ne of the electron gas in modulation-doped single GaAs quantum wells with AlAs/GaAs short-period super-lattice barriers are investigated. The experimental dependences are explained in terms of electron scattering by remote ionized donors with an effective two-dimensional concentration n*R and background impurities with a three-dimensional concentration nB. An expression for n*R(ne) is obtained including the contribution of X-valley electrons localized in AlAs layers to the suppression…
We report transport mobility measurements for clean, two-dimensional (2D) electron systems confined to GaAs quantum wells (QWs), grown via molecular beam epitaxy, in two families of structures, a standard, symmetrically-doped GaAs set of QWs with Al$_{0.32}$Ga$_{0.68}$As barriers, and one with additional AlAs cladding surrounding the QWs. Our results indicate that the mobility in narrow QWs with no cladding is consistent with existing theoretical calculations where interface roughness effects are softened by the penetration of the electron wave function into the adjacent low barriers. In contr…
Fermi Liquid Model of Radiation Induced Magnetoresistance Oscillations in GaAs/Al$_x$Ga$_{1-x}$As Heterostructure Two-Dimensional Electron System: Theoretical Evidence of an Electron Reservoir
Zudov等人[Phys. Rev. B { \bf 64}，2013 - 11（2001）]最近在GaAs/Al $_x$ Ga $_{1-x}$ As异质结构中观察到的毫米波辐射引起的磁阻振荡，通过引入基于有限温度费米液体直流电导率理论和电子库假设的模型，在理论上再现了这种现象.所获得的振荡模式显示出与Zudov等人的实验结果非常一致，并且与Smet等人的实验观察一致，与辐射场的偏振无关[Phys. Rev. Lett. { \bf 95}，116804（2005）]。
The effect of a constant electric field and donor impurity on the energies and oscillator strengths of electron intraband quantum transitions in double-well spherical quantum dot GaAs/Al$_{x}$Ga$_{1-x}$As/GaAs is researched. The problem is solved in the framework of the effective mass approximation and rectangular potential wells and barriers model using the method of wave function expansion over a complete set of electron wave functions in nanostructure without electric field. It is shown that under the effect of electric field, the electron in the ground state tunnels from the inner potentia…
We report on nonlinear transport measurements in a two-dimensional electron gas hosted in GaAs/AlGaAs heterostructures. Upon application of direct current, the low-temperature differential resistivity acquires a positive correction, which exhibits a pronounced maximum followed by a plateau. With increasing temperature, the nonlinearity diminishes and disappears. These observations can be understood in terms of a crossover from the Bloch-Grüneisen regime to the quasielastic scattering regime as the electrons are heated by direct current. Calculations considering the interaction of electrons wit…
Temperature and Electron Density Dependence of Spin Relaxation in GaAs/AlGaAs Quantum Well
利用时间分辨克尔旋转技术研究了具有不同结构对称性的GaAs/AlGaAs量子阱的自旋动力学随温度和载流子密度的变化。与非对称GaAs量子阱相比，对称GaAs量子阱的自旋弛豫时间要长得多，表明Rashba自旋轨道耦合对自旋弛豫有很强的影响. D 'yakonov-Perel'（DP）机制是GaAs/AlGaAs量子阱自旋弛豫的主要机制。自旋弛豫时间表现出非单调依赖于温度和光激发载流子密度的行为，揭示了电子-电子库仑散射的非单调温度和密度依赖性的重要作用。我们的实验观察表明，与最近发展的自旋弛豫理论的基础上微观动力学自旋布洛赫方程的方法很好的协议。
We describe synthesis of submicron Y3Fe5O12 (YIG) films sputtered on GaAs-based substrates and present results of the investigation of ferromagnetic resonance (FMR), spin wave propagation and interaction between spin excitations and 2D electrons in interface layer in YIG / AlOx / GaAs-heterostructures. It is found that the contribution of the relaxation process to the FMR linewidth is about 2 % of the linewidth ΔH. At the same time, for all samples FMR linewidths are high. Sputtered YIG films have magnetic inhomogeneity, which gives the main contribution to the FMR linewidth. Transistor struct…
Small numbers of nitrogen dopants dramatically modify the electronic properties of GaAs, generating very large shifts in the conduction-band energies with nonlinear concentration dependence, and impurity-associated spatially-localized resonant states within the conduction band. Cross-sectional scanning tunneling microscopy provides the local electronic structure of single nitrogen dopants at the (110) GaAs surface, yielding highly anisotropic spatial shapes when the empty states are imaged. Measurements of the resonant states relative to the GaAs surface states and their spatial extent allow a…
The electronic and optical properties of a GaAs quantum ring (QR) with few electrons in the presence of the Rashba spin-orbit interaction (RSOI) and the Dresselhaus spin-orbit interaction (DSOI) have been investigated theoretically. Configuration interaction (CI) method is employed to calculate the eigenvalues and eigenstates of the multiple-electron QR accurately. Our numerical results demonstrate that the symmetry breaking induced by the RSOI and DSOI leads to an anisotropic distribution of multi-electron states. The Coulomb interaction offers additional modulation of the electron distributi…
